Fairchild FCH76N60N service manual

FCH76N60N

D

G

S

G

S

D

TO-247

N-Channel MOSFET

600V, 76A, 36mΩ

FCH76N60N 600V N-Channel MOSFET

December 2011

TM

SupreMOS

Features

• 650V @TJ = 150oC

•R

• Ultra Low Gate Charge ( Typ.Qg = 218nC)

• Low Effective Output Capacitance

• 100% Avalanche Tested

• RoHS Compliant

MOSFET Maximum Ratings T

V

DSS

V

GSS

I

D

I

DM

E

AS

I

AR

E

AR

dv/dt

P

D

, T

T

J

T

L

*Drain current limited by maximum junction temperature

= 28mΩ ( Typ.)@ VGS = 10V, ID = 38A

DS(on)

= 25oC unless otherwise noted

C

Symbol Parameter Ratings Units

Drain to Source Voltage 600 V

Gate to Source Voltage ±30 V

-Continuous (T

-Continuous (T

(T

= 25oC) 543 W

C

- Derate above 25

STG

Drain Current

Drain Current - Pulsed (Note 1) 228 A

Single Pulsed Avalanche Energy (Note 2) 8022 mJ

Avalanche Current 25.3 A

Repetitive Avalanche Energy 5.43 mJ

MOSFET dv/dt Ruggedness 100

Peak Diode Recovery dv/dt (Note 3) 20

Power Dissipation

Operating and Storage Temperature Range -55 to +150
Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

Description

The SupreMOS MOSFET, Fairchild’s next generation of high
voltage super-junction MOSFETs, employs a deep trench filling
process that differentiates it from preceding multi-epi based
technologies. By utilizing this advanced technology and precise
process control, SupreMOS provides world class Rsp, superior
switching performance and ruggedness.
This SupreMOS MOSFET fits the industry’s AC-DC SMPS
requirements for PFC, server/telecom power, FPD TV power,
ATX power, and industrial power applications.

= 25oC) 76

C

= 100oC) 48.1

C

o

C4.34W/

300

Thermal Characteristics

Symbol Parameter Ratings Units

R

θJC

θCS

R

θJA

Thermal Resistance, Junction to Case 0.23

Thermal Resistance, Case to Heat Sink (Typical) 0.24

Thermal Resistance, Junction to Ambient 40

A

V/ns

o

C

o

C

o

C/WR

o

C

©2011 Fairchild Semiconductor Corporation
FCH76N60N Rev. C1

www.fairchildsemi.com1

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FCH76N60N FCH76N60N TO-247 - - 30

FCH76N60N 600V N-Channel MOSFET

Electrical Characteristics T

= 25oC unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV
ΔBV

ΔT

I

DSS

I

GSS

DSS

DSS

J

Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V, TC = 25oC 600 - - V
Breakdown Voltage Temperature

Coefficient

Zero Gate Voltage Drain Current

Gate to Body Leakage Current VGS = ±30V, V

I

= 250μA, Referenced to 25oC - 0.73 - V/oC

D

V

= 480V, V

DS

= 480V, V

V

DS

= 0V - - 10

GS

= 0V, TC = 125oC - - 100

GS

= 0V - - ±100 nA

DS

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Gate Threshold Voltage VGS = VDS, ID = 250μA2.0-4.0V

Static Drain to Source On Resistance VGS = 10V, ID = 38A - 28 36 mΩ

Forward Transconductance VDS = 20V, ID = 38A - 90 - S

Dynamic Characteristics

C

iss

C

oss

C

rss

C

oss

eff. Effective Output Capacitance VDS = 0V to 380V, VGS = 0V - 914 - pF

C

oss

Q

g(tot)

Q

gs

Q

gd

Input Capacitance

Output Capacitance - 370 495 pF

Reverse Transfer Capacitance - 3.1 5 pF

= 100V, VGS = 0V

V

DS

f = 1MHz

Output Capacitance VDS = 380V, VGS = 0V, f = 1MHz - 195 - pF

Total Gate Charge at 10V

V

= 380V, ID = 38A,

Gate to Source Gate Charge - 39 - nC

Gate to Drain “Miller” Charge - 66 - nC

DS

V

= 10V

GS

(Note 4)

ESR Equivalent Series Resistance(G-S) Drain Open - 1 - Ω

- 9310 12385 pF

- 218 285 nC

μA

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Turn-On Delay Time

Turn-On Rise Time - 24 58 ns

Turn-Off Delay Time - 235 480 ns

Turn-Off Fall Time - 32 74 ns

Drain-Source Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

= 25.3A, RG = 25Ω, Starting TJ = 25°C

2. I

AS

3. I

≤ 76A, di/dt ≤ 200A/μs, VDD ≤ 380V, Starting TJ = 25°C

SD

4. Essentially Independent of Operating Temperature Typical Characteristics

Maximum Continuous Drain to Source Diode Forward Current - - 76 A

Maximum Pulsed Drain to Source Diode Forward Current - - 228 A

Drain to Source Diode Forward Voltage V

Reverse Recovery Time

Reverse Recovery Charge - 16 - μC

= 380V, ID = 38A

V

DD

R

= 25Ω

GEN

(Note 4)

= 0V, I

GS

= 0V, I

V

GS

dI

/dt = 100A/μs

F

= 38A - - 1.2 V

SD

= 38A

SD

-3478ns

- 612 - ns

FCH76N60N Rev. C1

2

www.fairchildsemi.com

Typical Performance Characteristics

2468

1

10

100

500

-55oC

150oC

*Notes:

1. V

DS

= 20V

2. 250

μs Pulse Test

25oC

I

D

, Drain Current[A]

VGS, Gate-Source Voltage[V]

0.1 1 10 20

2

10

100

300

*Notes:

1. 250

μs Pulse Test

2. T

C

= 25oC

I

D

, Drain Current[A]

VDS, Drain-Source Voltage[V]

VGS = 15V

10V
8V
6V

5.5V
5V

4.5V

0.0 0.5 1.0 1.5

1

10

100

400

*Notes:

1. VGS = 0V

2. 250

μs Pulse Test

150oC

I

S

, Reverse Drain Current [A]

VSD, Body Diode Forward Voltage [V]

25oC

0 50 100 150 200 250

25

30

35

40

45

50

*Note: TC = 25oC

VGS = 20V

VGS = 10V

R

DS(ON)

[Ω],

Drain-Source On-Resistance

ID, Drain Current [A]

0 60 120 180 240

0

2

4

6

8

10

*Note: ID = 38A

VDS = 120V
V

DS

= 300V

V

DS

= 480V

V

GS

, Gate-Source Voltage [V]

Qg, Total Gate Charge [nC]

0.01 0.1 1 10 100 600

10

0

10

1

10

2

10

3

10

4

10

5

C

oss

C

iss

C

iss

= Cgs + Cgd (Cds = shorted)

C

oss

= Cds + C

gd

C

rss

= C

gd

*Note:

1. V

GS

= 0V

2. f = 1MHz

C

rss

Capacitances [pF]

VDS, Drain-Source Voltage [V]

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

FCH76N60N 600V N-Channel MOSFET

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

FCH76N60N Rev. C1

3

www.fairchildsemi.com