Fairchild FCH47N60NF service manual

FCH47N60NF 600V N-Channel MOSFET, FRFET

D

G

S

G

S

D

TO-247

FCH47N60NF

N-Channel MOSFET, FRFET

600V, 47A, 65mΩ
Features

•R

• Ultra Low Gate Charge (Typ. Q

• Low Effective Output Capacitance

• 100% Avalanche Tested

• RoHS Compliant

= 57.5mΩ (Typ.) @ VGS = 10V, ID = 23.5A

DS(on)

g

= 121nC)

Description

The SupreMOS MOSFET, Fairchild’s next generation of high
voltage super-junction MOSFETs, employs a deep trench filling
process that differentiates it from preceding multi-epi based
technologies. By utilizing this advanced technology and precise
process control, SupreMOS provides world class Rsp, superior
switching performance and ruggedness.
This SupreMOS MOSFET fits the industry’s AC-DC SMPS
requirements for PFC, server/telecom power, FPD TV power,
ATX power, and industrial power applications.

January 2011

TM

SupreMOS

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DSS

V

GSS

I

D

I

DM

E

AS

I

AR

E

AR

dv/dt

P

D

, T

T

J

STG

T

L

*Drain current limited by maximum junction temperature

Drain to Source Voltage 600 V
Gate to Source Voltage ±30 V

Drain Current
Drain Current - Pulsed (Note 1) 137.4 A

Single Pulsed Avalanche Energy (Note 2) 2926 mJ
Avalanche Current 15.3 A
Repetitive Avalanche Energy 3.7 mJ
MOSFET dv/dt Ruggedness 100 V/ns
Peak Diode Recovery dv/dt (Note 3) 50 V/ns

Power Dissipation
Operating and Storage Temperature Range -55 to +150

Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds

o

= 25

C unless otherwise noted

C

-Continuous (T

-Continuous (T

(T

= 25oC) 368 W

C

- Derate above 25

= 25oC) 45.8

C

= 100oC) 28.9

C

o

C2.94W/

300

Thermal Characteristics

Symbol Parameter Ratings Units

R

θJC
θCS

R

θJA

Thermal Resistance, Junction to Case 0.34
Thermal Resistance, Case to Heat Sink (Typical) 0.24
Thermal Resistance, Junction to Ambient 40

A

o

C

o

C

o

C

o

C/WR

©2011 Fairchild Semiconductor Corporation
FCH47N60NF Rev. A1

www.fairchildsemi.com1

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FCH47N60NF FCH47N60NF TO-247 - - 30

FCH47N60NF 600V N-Channel MOSFET, FRFET

Electrical Characteristics T

= 25oC unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV
ΔBV

ΔT
I

DSS

I

GSS

DSS

DSS

J

Drain to Source Breakdown Voltage ID = 1mA, VGS = 0V, TC = 25oC 600 - - V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±30V, V

I

= 1mA, Referenced to 25oC - 0.78 - V/oC

D

V

= 480V, V

DS

= 480V, V

V

DS

= 0V - - 10

GS

= 0V, TC = 125oC - - 100

GS

= 0V - - ±100 nA

DS

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Gate Threshold Voltage VGS = VDS, ID = 250μA2-4V
Static Drain to Source On Resistance VGS = 10V, ID = 23.5A - 57.5 65.0 mΩ
Forward Transconductance VDS = 40V, ID = 23.5A - 52 100 S

Dynamic Characteristics

C

iss

C

oss

C

rss

C

oss

eff. Effective Output Capacitance VDS = 0V to 380V, VGS = 0V - 492 - pF

C

oss

Q

g(tot)

Q

gs

Q

gd

Input Capacitance
Output Capacitance - 195 260 pF
Reverse Transfer Capacitance - 3.0 5.0 pF

= 100V, VGS = 0V

V

DS

f = 1MHz

Output Capacitance VDS = 380V, VGS = 0V, f = 1MHz - 108 - pF

Total Gate Charge at 10V

V

= 380V, ID = 23.5A,

Gate to Source Gate Charge - 23 - nC
Gate to Drain “Miller” Charge - 47 - nC

DS

V

= 10V

GS

(Note 4)

ESR Equivalent Series Resistance(G-S) Drain Open - 0.9 - Ω

- 4600 6120 pF

- 121 157 nC

μA

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Turn-On Delay Time
Turn-On Rise Time - 22 54 ns
Turn-Off Delay Time - 117 244 ns
Turn-Off Fall Time - 4 18 ns

Drain-Source Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature
= 15.3A, RG = 25Ω, Starting TJ = 25°C

2. I

AS

3. I

≤ 45.8 A, di/dt ≤ 1200A/μs, VDD ≤ 380V, Starting TJ = 25°C

SD

4. Essentially Independent of Operating Temperature Typical Characteristics

Maximum Continuous Drain to Source Diode Forward Current - - 47 A
Maximum Pulsed Drain to Source Diode Forward Current - - 141 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 1.3 - μC

= 380V, ID = 23.5A

V

DD

R

= 4.7Ω

GEN

(Note 4)

= 0V, I

GS

= 0V, I

V

GS

dI

/dt = 100A/μs

F

= 23.5A - - 1.2 V

SD

= 23.5A

SD

-3478ns

- 169 - ns

FCH47N60NF Rev. A1

2

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Typical Performance Characteristics

2468

1

10

100

500

-55oC

150oC

*Notes:

1. V

DS

= 20V

2. 250

μs Pulse Test

25oC

I

D

, Drain Current[A]

VGS, Gate-Source Voltage[V]

0.1 1 10 30

1

10

100

300

*Notes:

1. 250

μs Pulse Test

2. T

C

= 25oC

I

D

, Drain Current[A]

VDS, Drain-Source Voltage[V]

VGS = 15V
10V

8V
6V
5V

0.40.60.81.01.21.4

1

10

100

400

*Notes:

1. VGS = 0V

2. 250

μs Pulse Test

150oC

I

S

, Reverse Drain Current [A]

VSD, Body Diode Forward Voltage [V]

25oC

0 40 80 120 160

40

60

80

100

120

140

*Note: TC = 25oC

VGS = 20V

VGS = 10V

R

DS(ON)

[mΩ],

Drain-Source On-Resistance

ID, Drain Current [A]

0.1 1 10 100 600

1

10

10

2

10

3

10

4

10

5

C

oss

C

iss

C

iss

= Cgs + Cgd (Cds = shorted)

C

oss

= Cds + C

gd

C

rss

= C

gd

*Note:

1. V

GS

= 0V

2. f = 1MHz

C

rss

Capacitances [pF]

VDS, Drain-Source Voltage [V]

0 20 40 60 80 100 120 140

0

2

4

6

8

10

*Note: ID = 23.5A

VDS = 120V
V

DS

= 300V

V

DS

= 480V

V

GS

, Gate-Source Voltage [V]

Qg, Total Ga te Charge [nC]

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

FCH47N60NF 600V N-Channel MOSFET, FRFET

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

FCH47N60NF Rev. A1

3

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