Fairchild FCH47N60-F133 service manual
FCH47N60_F133
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TO-247
FCH Series
FCH47N60_F133
February
TM
SuperFET
Features
•650V @TJ = 150°C
• Typ. Rds(on)=0.058Ω
• Ultra low gate charge (typ. Qg=210nC)
• Low effective output capacitance (typ. Coss.eff=420pF)
• 100% avalanche tested
Description
SuperFETTM is, Fairchild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system miniaturization and higher efficiency.
Absolute Maximum Ratings
Symbol Parameter FCH47N60 Unit
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt
P
D
T
J, TSTG
T
L
Drain-Source Voltage 600 V
Drain Current - Continuous (TC = 25°C)
- Continuous (T
Drain Current - Pulsed
Gate-Source voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current (Note 1) 47 A
Repetitive Avalanche Energy (Note 1) 41.7 mJ
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range -55 to +150 °C
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
= 100°C)
C
(Note 1)
(Note 2)
(Note 3) 4.5 V/ns
47
29.7
141
1800 mJ
417
3.33
300 °C
A
A
A
W
W/°C
Thermal Characteristics
Symbol Parameter Typ. Max. Unit
R
θJC
R
θCS
R
θJA
©2009 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FCH47N60_F133 Rev. A.
Thermal Resistance, Junction-to-Case -- 0.3 °C/W
Thermal Resistance, Case-to-Sink 0.24 --
Thermal Resistance, Junction-to-Ambient -- 41.7 °C/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FCH47N60 FCH47N60_F133 TO-247 - - 30
FCH47N60_F133
Electrical Characteristics
TC = 25°C unless otherwise noted
Symbol Parameter Conditions Min Typ Max Units
Off Characteristics
BV
DSS
ΔBV
/ ΔT
BV
DS
I
DSS
I
GSSF
I
GSSR
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Dynamic Characteristics
C
iss
C
oss
C
rss
C
oss
C
oss
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA, TJ = 25°C 600 -- -- V
= 0V, ID = 250μA, TJ = 150°C -- 650 -- V
V
GS
Breakdown Voltage Temperature
DSS
Coefficient
J
Drain-Source Avalanche Breakdown
Voltage
Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V
I
= 250μA, Referenced to 25°C--0.6--V/°C
D
VGS = 0V, ID = 47A
V
= 480V, TC = 125°C
DS
-- 700 -- V
--
--
--
--
1
10
μA
μA
Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA
Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA
Gate Threshold Voltage VDS = VGS, ID = 250μA3.0--5.0V
Static Drain-Source
On-Resistance
Forward Transconductance VDS = 40V, ID = 23.5A
Input Capacitance VDS = 25V, VGS = 0V,
Output Capacitance -- 3200 4200 pF
V
= 10V, ID = 23.5A -- 0.058 0.07 Ω
GS
(Note 4)
-- 40 -- S
-- 5900 8000 pF
f = 1.0MHz
Reverse Transfer Capacitance -- 250 -- pF
Output Capacitance VDS = 480V, VGS = 0V, f = 1.0MHz -- 160 -- pF
eff. Effective Output Capacitance VDS = 0V to 400V, VGS = 0V -- 420 -- pF
Turn-O n Delay Time VDD = 300V, ID = 47A
R
= 25Ω
Turn-On Rise Time -- 210 450 ns
G
-- 185 430 ns
Turn-Off Delay Time -- 520 1100 ns
Turn-Off Fall Time -- 75 160 ns
Total Gate Charge VDS = 480V, ID = 47A
V
= 10V
Gate-Source Charge -- 38 -- nC
GS
Gate-Drain Charge -- 110 -- nC
(Note 4, 5)
-- 210 270 nC
(Note 4, 5)
Maximum Continuous Drain-Source Diode Forward Current -- -- 47 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 141 A
Drain-Source Diode Forward Voltage VGS = 0V, IS = 47A -- -- 1.4 V
Reverse Recovery Time VGS = 0V, IS = 47A
dI
/dt =100A/μs (Note 4)
Reverse Recovery Charge -- 25 -- μC
F
-- 590 -- ns
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. I
= 18A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
AS
3. ISD ≤ 47A, di/dt ≤ 200A/μs, VDD ≤ BV
4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
, Starting TJ = 25°C
DSS
FCH47N60_F133 Rev. A.
2 www.fairchildsemi.com
Typical Performance Characteristics
10
-1
10
0
10
1
10
0
10
1
10
2
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
Notes :※
1. 250μ s Pulse Test
2. T
C
= 25℃
I
D
, Drain Current [A]
VDS, Drain-Source Voltage [V]
246810
10
0
10
1
10
2
Note※
1. VDS = 40V
2. 250μ s Pulse T est
-55℃
150℃
25℃
I
D
, Drain Current [A]
VGS , Gate-Source Voltage [V]
0 20 40 60 80 100 120 140 160 180 200
0.00
0.05
0.10
0.15
0.20
VGS = 20V
VGS = 10V
Note : T※J = 25℃
R
DS(ON)
[Ω ],Drain-Source On-Resistance
ID, Drain Current [A]
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
10
0
10
1
10
2
25℃
150℃
Notes :※
1. VGS = 0V
2. 250μ s Pulse Test
I
DR
, Reverse Drain Current [A]
VSD , Source-Drain Voltage [V]
10
-1
10
0
10
1
0
5000
10000
15000
20000
25000
30000
C
iss
= Cgs + Cgd (Cds = shorted)
C
oss
= Cds + C
gd
C
rss
= C
gd
Notes :※
1. VGS = 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
Capacitance [pF]
VDS, Drain-Source Voltage [V]
0 50 100 150 200 250
0
2
4
6
8
10
12
VDS = 250V
VDS = 100V
VDS = 400V
Note : I※D = 47A
V
GS
, Gate-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperatue
FCH47N60_F133
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
FCH47N60_F133 Rev. A.
3 www.fairchildsemi.com
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