Fairchild BUZ11 service manual

BUZ11

[ /Title
(BUZ1

1)
/Sub­ject
(30A,
50V,

0.040
Ohm,
N­Chan­nel
Power
MOS­FET)
/Autho
r ()
/Key­words
(Inter­sil
Corpo­ration,
N­Chan­nel
Power
MOS­FET,
TO­220AB
)
/Cre­ator ()
/DOCI
NFO
pdf­mark

Data Sheet

30A, 50V, 0.040 Ohm, N-Channel Power
MOSFET

This is an N-Channel enhancement mode silicon gate power
field effect transistor designed for applications such as
switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.

Formerly developmental type TA9771.

Ordering Information

PART NUMBER PACKAGE BRAND

BUZ11 TO-220AB BUZ11

NOTE: When ordering, use the entire part number.

Packaging

JEDEC TO-220AB

DRAIN (FLANGE)

June 1999 File Number 2253.2

Features

• 30A, 50V

•r

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 0.040 Ω

DS(ON)

Components to PC Boards”

Symbol

D

G

S

SOURCE

DRAIN

GATE

©2001 Fairchild Semiconductor Corporation BUZ1 Rev. A

±

µ

Ω

θ

≤

θ

≤

µ

BUZ11

Absolute Maximum Ratings

o

T

= 25

C, Unless Otherwise Specified

C

BUZ11 UNITS

Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (R

Continuous Drain Current T

= 20k Ω ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

GS

o

= 30

C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

C

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

DS

DGR

D

DM

GS

D

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 W/

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

T

J,

STG

50 V

50 V

30 A

120 A

20 V

75 W

-55 to 150

o

C

o

C

DIN Humidity Category - DIN 40040 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

IEC Climatic Category - DIN IEC 68-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55/150/56

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

300
260

o

C

o

C

NOTE:

= 25

J

o

1. T

Electrical Specifications T

C to 125

o

C.

o

= 25

C, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV

Gate Threshold Voltage V

GS(TH)

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I

Drain to Source On Resistance (Note 2) r

DS(ON)

Forward Transconductance (Note 2) g

Turn-On Delay Time t

d(ON)

Rise Time t

Turn-Off Delay Time t

d(OFF)

Fall Time t

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Thermal Resistance Junction to Case R

Thermal Resistance Junction to Ambient R

DSS

GSS

DSS

fs

r

f

ISS

OSS

RSS

JC

JA

I

= 250 µ A, V

D

V

= V

GS

T

= 25

J

T

= 125

J

V

= 20V, V

GS

I

= 15A, V

D

= 25V, I

V

DS

V

= 30V, I

CC

R

= 10 Ω

L

V

= 25V, V

DS

= 0V 50 - - V

GS

, I

= 1mA (Figure 9) 2.1 3 4 V

DS

D

o

C, V

= 50V, V

DS

o

C, V

= 50V, V

DS

= 0V - 10 100 nA

DS

= 10V (Figure 8) - 0.03 0.04

GS

= 15A (Figure 11) 4 8 - S

D

≈

3A, V

D

= 0V - 20 250

GS

= 0V - 100 1000 µ A

GS

= 10V, R

GS

GS

= 50 Ω,

-3045ns

- 70 110 ns

- 180 230 ns

- 130 170 ns

= 0V, f = 1MHz (Figure 10) - 1500 2000 pF

GS

- 750 1100 pF

- 250 400 pF

1.67

75

o

o

A

C/W

C/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Continuous Source to Drain Current I

Pulsed Source to Drain Current I

Source to Drain Diode Voltage V

Reverse Recovery Time t

Reverse Recovery Charge Q

SD

SDM

SD

rr

RR

NOTES:

2. Pulse Test: Pulse width ≤ 300ms, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).

©2001 Fairchild Semiconductor Corporation BUZ1 Rev. A

T

T

T

T
V

o

= 25

C--30A

C

o

= 25

C - - 120 A

C

o

= 25

C, I

J

= 25

J

= 30V

R

= 60A, V

SD

o

C, I

= 30A, dI

SD

= 0V - 1.7 2.6 V

GS

/dt = 100A/ µ s,

SD

- 200 - ns

- 0.25 -

C