Fairchild BSS138W service manual

December 2010

BSS138W

N-Channel Logic Level Enhancement Mode Field Effect Transistor

BSS138W — N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description

These N-Channel enhancement mode field effect
transistor. These products have been designed to
minimize on-state resistance while provide rugged,
reliable, and fast switching performance.These prod­ucts are particularly suited for low voltage, low current
applications such as small servo motor control, power
MOSFET gate drivers, and other switching applica­tions.

D

G

SOT-323

Marking : 138

Absolute Maximum Ratings T

= 25°C unless otherwise noted

A

S

Features

•R
R

• High density cell design for extremely low R

• Rugged and Reliable

• Compact industry standard SOT-323 surface mount
package

= 3.5Ω @ VGS = 10V, ID = 0.22A

DS(ON)

= 6.0Ω @ VGS = 4.5V, ID = 0.22A

DS(ON)

Symbol Parameter Value Units

V

DSS

V

GSS

I

Drain Current - Continuous (Note1)

D

T

J, TSTG

T

L

Drain-Source Voltage 50 V
Gate-Source Voltage ±20 V

0.21

- Pulsed
Operating and Storage Junction Temperature Range -55 to +150 °C
Maximum Lead Temperature for Soldering

Purposes, 1/16” from Case for 10 Seconds

0.84

300 °C

DS(ON)

A
A

Thermal Characteristics

Symbol Parameter Value Units

P

D

R

θJA

Maximum Power Dissipation (Note1)
Derate Above 25°C

Thermal Resistance, Junction to Ambient (Note1) 367 °C/W

340

2.72

mW

mW/°C

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

138 BSS138W 7’’ 8mm 3000 units

© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
BSS138W Rev. A0 1

BSS138W — N-Channel Logic Level Enhancement Mode Field Effect Transistor

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Condition Min. Typ. Max. Units

Off Characteristics

BV

ΔBV

ΔT

I

I

DSS

DSS

GSS

Drain-Source Breakdown Voltage V
Breakdown Voltage Temperature

DSS

Coefficient

J

Zero Gate Voltage Drain Current V

Gate-Body Leakage V

= 0V, ID = 250μA50 V

GS

ID = 250μA, Referenced to 25°C71mV/°C

DS

V

DS

V

DS
GS

= 50V, V
= 50V, V
= 30V, V

= ±20V, V

= 0V

GS

= 0V, TJ = 125°C

GS

= 0V

GS

= 0V ±100 nA

DS

0.5
5

100

On Characteristics (Note2)

V

ΔV

R

I

GS(th)

GS(th)

ΔT

DS(ON)

D(ON)

g

FS

Gate Threshold Voltage VDS = VGS, ID = 1mA 0.8 1.3 1.5 V
Gate Threshold Voltage

Temperature Coefficient

J

Static Drain-Source
On-Resistance

On-State Drain Current V

ID = 1mA, Referenced to 25°C-3.9mV/°C

VGS = 10V, ID = 0.22A

= 4.5V, ID = 0.22A

V

GS

VGS = 10V , ID = 0.22A, TJ=125°C

= 10V, V

GS

= 5V 0.2 A

DS

1.17

1.36

2.16

Forward Transconductance VDS = 10V, ID = 0.22A 0.12 S

3.5

6.0

5.8

Dynamic Characteristics

C

C

oss

C

rss

R

Input Capacitance

iss

V

Output Capacitance 5.9 pF

= 25V , V

DS

= 0V , f = 1.0MHz

GS

38 pF

Reverse Transfer Capacitance 3.5 pF
Gate Resistance V

G

= 15mV, f = 1.0MHz 11 Ω

GS

Switching Characteristics (Note2)

t

d(on)

t

t

d(off)

Q
Q
Q

t

Turn-On Delay Time
Turn-On Rise Time 1.9 18

r

Turn-Off Delay Time 6.7 36
Turn-Off Fall Time 6.5 14

f

Total Gate Change

g

Gate-Source Change 0.12

gs

Gate-Drain Change 0.22

gd

VDD = 30V, ID = 0.29A,
V

= 10V, R

GS

= 25V, ID = 0.22A,

V

DS

= 10V

V

GS

GEN

= 6Ω

2.3 5 ns

1.1 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

V

SD

Notes:

1. 367°C/W when mounted on a minimum pad.

2. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%

Maximum Continuous Drain–Source Diode Forward Current 0.22 A

S

Drain-Source Diode Forward

VGS = 0V, IS = 0.44A (Note2) 1.4 V

Voltage

μA
μA

nA

Ω
Ω
Ω

ns
ns
ns

nC
nC

© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
BSS138W Rev. A0 2