Fairchild BSS138W service manual

December 2010

BSS138W

N-Channel Logic Level Enhancement Mode Field Effect Transistor

BSS138W — N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description

These N-Channel enhancement mode field effect
transistor. These products have been designed to
minimize on-state resistance while provide rugged,
reliable, and fast switching performance.These prod­ucts are particularly suited for low voltage, low current
applications such as small servo motor control, power
MOSFET gate drivers, and other switching applica­tions.

D

G

SOT-323

Marking : 138

Absolute Maximum Ratings T

= 25°C unless otherwise noted

A

S

Features

•R
R

• High density cell design for extremely low R

• Rugged and Reliable

• Compact industry standard SOT-323 surface mount
package

= 3.5Ω @ VGS = 10V, ID = 0.22A

DS(ON)

= 6.0Ω @ VGS = 4.5V, ID = 0.22A

DS(ON)

Symbol Parameter Value Units

V

DSS

V

GSS

I

Drain Current - Continuous (Note1)

D

T

J, TSTG

T

L

Drain-Source Voltage 50 V
Gate-Source Voltage ±20 V

0.21

- Pulsed
Operating and Storage Junction Temperature Range -55 to +150 °C
Maximum Lead Temperature for Soldering

Purposes, 1/16” from Case for 10 Seconds

0.84

300 °C

DS(ON)

A
A

Thermal Characteristics

Symbol Parameter Value Units

P

D

R

θJA

Maximum Power Dissipation (Note1)
Derate Above 25°C

Thermal Resistance, Junction to Ambient (Note1) 367 °C/W

340

2.72

mW

mW/°C

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

138 BSS138W 7’’ 8mm 3000 units

© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
BSS138W Rev. A0 1

BSS138W — N-Channel Logic Level Enhancement Mode Field Effect Transistor

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Condition Min. Typ. Max. Units

Off Characteristics

BV

ΔBV

ΔT

I

I

DSS

DSS

GSS

Drain-Source Breakdown Voltage V
Breakdown Voltage Temperature

DSS

Coefficient

J

Zero Gate Voltage Drain Current V

Gate-Body Leakage V

= 0V, ID = 250μA50 V

GS

ID = 250μA, Referenced to 25°C71mV/°C

DS

V

DS

V

DS
GS

= 50V, V
= 50V, V
= 30V, V

= ±20V, V

= 0V

GS

= 0V, TJ = 125°C

GS

= 0V

GS

= 0V ±100 nA

DS

0.5
5

100

On Characteristics (Note2)

V

ΔV

R

I

GS(th)

GS(th)

ΔT

DS(ON)

D(ON)

g

FS

Gate Threshold Voltage VDS = VGS, ID = 1mA 0.8 1.3 1.5 V
Gate Threshold Voltage

Temperature Coefficient

J

Static Drain-Source
On-Resistance

On-State Drain Current V

ID = 1mA, Referenced to 25°C-3.9mV/°C

VGS = 10V, ID = 0.22A

= 4.5V, ID = 0.22A

V

GS

VGS = 10V , ID = 0.22A, TJ=125°C

= 10V, V

GS

= 5V 0.2 A

DS

1.17

1.36

2.16

Forward Transconductance VDS = 10V, ID = 0.22A 0.12 S

3.5

6.0

5.8

Dynamic Characteristics

C

C

oss

C

rss

R

Input Capacitance

iss

V

Output Capacitance 5.9 pF

= 25V , V

DS

= 0V , f = 1.0MHz

GS

38 pF

Reverse Transfer Capacitance 3.5 pF
Gate Resistance V

G

= 15mV, f = 1.0MHz 11 Ω

GS

Switching Characteristics (Note2)

t

d(on)

t

t

d(off)

Q
Q
Q

t

Turn-On Delay Time
Turn-On Rise Time 1.9 18

r

Turn-Off Delay Time 6.7 36
Turn-Off Fall Time 6.5 14

f

Total Gate Change

g

Gate-Source Change 0.12

gs

Gate-Drain Change 0.22

gd

VDD = 30V, ID = 0.29A,
V

= 10V, R

GS

= 25V, ID = 0.22A,

V

DS

= 10V

V

GS

GEN

= 6Ω

2.3 5 ns

1.1 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

V

SD

Notes:

1. 367°C/W when mounted on a minimum pad.

2. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%

Maximum Continuous Drain–Source Diode Forward Current 0.22 A

S

Drain-Source Diode Forward

VGS = 0V, IS = 0.44A (Note2) 1.4 V

Voltage

μA
μA

nA

Ω
Ω
Ω

ns
ns
ns

nC
nC

© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
BSS138W Rev. A0 2

Typical Performance Characteristics

BSS138W — N-Channel Logic Level Enhancement Mode Field Effect Transistor

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

2.0

1.5

6V

4.5V

1.0

. Drain-Source Current (A)

0.5

D

I

0.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

3.5V

VDS. Drain-Source Voltage (V)

Figure 3. On-Resistance Variation with

Temperature.

2.5

VGS = 10V
I

= 220 mA

D

2.0

(Ω)

1.5

(on)

DS

R

1.0

Normalized Drain-Source On-Resistance

0.5

-50 0 50 100 150

TJ. Junction Temperature (oC)

VGS = 10V

3V

2.5V

2V

Drain Current and Gate Voltage.

3.5

3.0

2.5

(Ω)

3V

(on),

DS

R

VGS = 2.5V

2.0

1.5

Drain-Source On-Resistance

1.0

0.5

0.00.20.40.60.81.0

3.5V

4.5V

4V

10V

6V

ID. Drain-Source Current(A)

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

4.0

3.5

3.0

2.5

(Ω)

2.0

(on)

DS

R

1.5

1.0

Drain-Source On-Resistance

0.5

0.0
0246810

TA = 25oC

TA = 125oC

VGS. Gate to Source Voltage(V)

ID = 110 mA

Figure 5. Drain-Source On Voltage with

Temperature.

2.0

VGS = 10V

1.6

1.2

0.8

. Drain-Source On Volt age ( V )

DS

0.4

V

0.0

0.0 0.1 0.2 0.3 0.4 0.5 0.6

ID. Drain Current (A)

TA = 125(oC)

TA = 25(oC)

TA = -55(oC)

Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

1000

VGS = 0 V

100

10

1

. Reverse Drain Current [mA]

S

I

0.1

0.0 0.2 0.4 0.6 0.8 1.0 1.2

TA=150oC

TA=25oC

TA=-55oC

VSD. Body Diode Forward Voltage [V]

© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
BSS138W Rev. A0 3

Typical Performance Characteristics (Continued)

BSS138W — N-Channel Logic Level Enhancement Mode Field Effect Transistor

Figure 7. Gate Charge Characteristics.

10

ID = 220mA

8

VDS = 8V

6

4

. Gate-Source Voltage ( V )

GS

V

2

0

0.0 0.2 0.4 0.6 0.8 1.0 1.2

VDS = 30V

VDS = 25V

Qg. Gate Charg e (nC)

Figure 9. Maximum Safe Operating Area.

Limit

10

0

VGS=10V
Single Pulse
Rthja=367
T

= 25oC

a

100μs

1ms

10ms

100ms

1s

DC

o

C/W

1

10

, Drain Current [A]

D

I

1

10

0

10

-1

10

R

DS(on)

-2

10

-3

10

-1

10

VDS, Drain-Source Voltage [V]

Figure 8. Capacitance Characteristics.

100

80

60

. Capacitance (pF)

RSS

40

C

OSS,

C

ISS,

20

C

0

C

ISS

C

OSS

C

RSS

0 1020304050

VDS. Voltage Bias (V)

f = 1M H Z
V

= 0V

GS

Figure 10. Single Pulse Maximum

Power Dissipation.

5

4

3

2

1

P(pk), Peak Transient Power (W)

2

10

0
1E-3 0.01 0.1 1 10 100

t1, Time(sec)

Single Pulse

o

Rthja=367

C/W

T

=25

A

Figure 11. Transient Thermal Response Curve.

1

50%

Rthja(t)=r(t)*Rthja

30%

0.1
10%

5%
2%

D=1%

r(t), Normalized Transient Thermal Resistance

Single Pulse

0.01
1E-4 1E-3 0.01 0.1 1 10 100 1000

t1, time(sec)

© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
BSS138W Rev. A0 4

Rthja=367

o

C/W

Physical Dimensions

BSS138W — N-Channel Logic Level Enhancement Mode Field Effect Transistor

1.25±0.10 2.10±0.10

1.00±0.10

2.00±0.20

SOT-323

0.275±0.100

0.95±0.15

0.05

3°

+0.05
–0.02

0.90

±0.10

3°

1.30±0.10

+0.04

0.135

–0.01

0.10 Min

Dimensions in Millimeters

© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
BSS138W Rev. A0 5

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Datasheet contains the design specifications for product development. Specifications may change in
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Rev. I50

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