Fairchild BSR17A service manual

BSR17A

NPN General Purpose Amplifier

NPN General Purpose Amplifier

June 2007

C

E

B

SOT-23

MARK: U92

Features

This device is designed as a general purpose amplifier and switch.
The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23.

Absolute Maximum Ratings *T

Symbol Parameter Value Units

V

CBO

V

CEO

V

EBO

I

C

T

J

T

STG

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Collector-Base Voltage 60 V
Collector-Emitter Voltage 40 V
Emitter-Base Voltage 6.0 V
Collector Current (DC) 200 mA
Junction Temperature -55 ~ +150 °C
Storage Temperature -55 ~ +150 °C

Thermal Characteristics *T

Symbol Characteristic Max Units

PD

R θ JA Thermal Resistance, Junction to Ambient 357 ℃/W

*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.

Total Device Dissipation

Derate above 25℃

= 25°C unless otherwise noted

a

= 25°C unless otherwise noted

a

350

2.8

mW

mW/℃

©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

Rev. A

BSR17A NPN General Purpose Amplifier

Electrical Characteristics *T

= 25°C unless otherwise noted

a

Symbol Parameter Test Condition MIN MAX Units

Off Characteristics

V(BR)CEO Collector-Emitter Breakdown Voltage IC = 1.0 mA, IB = 0 40 V
V(BR)CBO Collector-Base Breakdown Voltage IC = 10 µA, IB = 0 60 V
V(BR)EBO Emitter-Base Breakdown Voltage IC = 10 µA, IB = 0 6.0 V
ICBO Collector-Cutoff Current VCB = 30 V, TA = 150°C 5.0 µA
ICEX Emitter-Cu to ff Current VCE = 30 V, VEB = 3.0 V 50 nA
IBEX IBEX Reverse Base Current VCE = 30 V, VEB = 3.0 V 50 nA

On Characteristics

hFE DC Current Gain IC = 0.1 mA, VCE = 1.0 V

IC = 1.0 mA, VCE = 1.0 V
IC = 10 mA, VCE = 1.0 V
IC = 50 mA, VCE = 1.0 V
IC = 100 mA, VCE = 1.0 V

VCE(sat) Collector-Emitter Saturation Voltage * IC = 10 mA, IB = 1.0 mA

IC = 50 mA, IB = 5.0 mA

VBE(sat) Emitter-Base Breakdown Voltage * IC = 10 mA, IB = 1.0 mA

IC = 50 mA, IB = 5.0 mA

40
70

100

60
30

0.65 0.85

300

0.2

0.3

0.95

Small Signal Characteristics

fT Transition Frequency IC = 20 mA, VCE = 20 V, f = 100 MHz 300 MHz
Ccb Collector-Base Capacitance VCB = 0.5 V, IE = 0, f = 1.0 MHz 4.0 pF
Ceb Emitter-Base Capacitance VEB = 0.5 V, IC = 0, f = 1.0 MHz 8.0 pF
hie Input Impedance VCE= 10 V,IC= 1.0 mA,f=1.0 kHz 1.0 10 kΩ
hfe Small-Signal Current Gain VCE= 10 V,IC= 1.0 mA,f=1.0 kHz 100 400
hoe Output Admittance VCE= 10 V,IC= 1.0 mA,f=1.0 kHz 1.0 40 µS

V
V

V
V

Switching Characteristics

td Delay Time IC = 10 mA, IB1 = 1.0 mA,VEB= 0.5 V 35 ns
tr Rise Time 4.0 pF
ts Storage Time IC = 10 mA, IBon = IBoff = 1.0 mA 200 ns
tf Fall Time 50 ns

*Pulse Test: Pulse Width 300 s, Duty Cycle 2.0 %

Spice Model

NPN (Is=6.734f Xti=3 Eg=1.11 Vaf=74.03 Bf=416.4 Ne=1.259 Ise=6.734 Ikf=66.78m Xtb=1.5 Br=.7371 Nc=2
Isc=0 Ikr=0 Rc=1 Cjc=3.638p Mjc=.3085 Vjc=.75 Fc=.5 Cje=4.493p Mje=.2593 Vje=.75 Tr=239.5n Tf=301.2p

Itf=.4 Vtf=4 Xtf=2 Rb=10)

BSR17A Rev. A

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