Fairchild BSR14, BSR14 Schematic [ru]
September 2012
SOT-23
Mark:U8
C
B
E
BSR14
NPN General Purpose Amplifier
Features
• This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA.
• Sourced from Process 19.
• See BCW65C for characteristics.
BSR14 — NPN General Purpose Amplifier
Absolute Maximum Ratings* T
= 25C unless otherwise noted
a
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
T
J, Tstg
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics T
Symbol Parameter
P
D
R
JA
* Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
Collector-Emitter Voltage 40 V
Collector-Base Voltage 75 V
Emitter-Base Voltage 6.0 V
Collector Current - Continuous 800 mA
Operating and Storage Junction Temperature Range -55 to +150 C
= 25C unless otherwise noted
a
Max.
*BSR14
Total Device Dissipation
Derate above 25C
Thermal Resistance, Junction to Ambient 357 C/W
350
2.8
Units
mW
mW/C
© 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com
BSR14 Rev. B0 1
BSR14 — NPN General Purpose Amplifier
Electrical Characteristics T
Symbol
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CEX
I
BEX
I
EBO
ON CHARACTERISTICS
h
FE
V
CE(sat)
V
BE(sat)
SMALL SIGNAL CHARACTERISTICS
f
T
C
CB
h
ie
h
fe
h
oe
SWITCHING CHARACTERISTICS
t
d
t
r
t
s
t
f
Collector-Emitter Breakdown Voltage IC = 10A, IB = 0 40 V
Collector-Base Breakdown Voltage IC = 10A, IE = 0 75 V
Emitter-Base Breakdown Voltage IE = 10A, IC = 0 6.0 V
Collector-Cutoff Current VCB = 60V,
Collector-Cutoff Current V
Reverse Base Current VCE = 60V, VEB = 3.0V 20 nA
Emitter-Cutoff Current VEB = 3.0V, IC = 0 15 nA
DC Current Gain IC = 0.1mA, VCE = 10V
Collector-Emitter Saturation Voltage IC = 150mA, IB = 15mA
Base-Emitter Saturation Voltage IC = 150mA, IB = 15mA
Current Gain - Bandwidth Product IC = 20mA, VCE = 20V,
Collector-Base Capacitance VCB = 10V, IE = 0,
Input Impedance VCE = 10V, IC = 1.0mA,
Small-Signal Current Gain VCE = 10V, IC = 1.0mA,
Output Admittance VCE = 10V, IC = 1.0mA,
Delay Time VCC = 30V, V
Rise Time 25 ns
Storage Time VCC = 30V, IC = 150mA,
Fall Time 60 ns
Parameter Test Condition Min. Max. Units
= 25°C unless otherwise noted
a
VCB = 60V, Ta = 150°C
= 60V, VEB = 3.0V 10 nA
CE
I
= 1.0mA, VCE = 10V
C
IC = 10mA, VCE = 10V
= 150mA, VCE = 10V
I
C
IC = 150mA, VCE = 1.0V
IC = 500mA, VCE = 10V
IC = 500mA, IB = 50mA
= 500mA, IB = 50mA
I
C
f = 100mHz
f = 1.0MHz
f = 1.0kHz
f = 1.0kHz
f = 1.0kHz
0.5V, I
I
I
= 150mA,
C
= 15mA
B1
= IB2 = 15mA
B1
BE(OFF)
=
10
10
nA
A
35
50
75
100
300
50
40
0.3
1.0
0.6 1.2
2.0
V
V
V
V
300 MHz
8.0 pF
2.0 8.0 k
50 300
535S
10 ns
225 ns
Spice Model
NPN (Is=14.34f Xti=3 Eg=1.11 Vaf=74.03 Bf=255.9 Ne=1.307 Ise=14.34f Ikf=.2847 Xtb=1.5 Br=6.092 Nc=2 Isc=0
Ikr=0 Rc=1 Cjc=7.306p Mjc=.3416 Vjc=.75 Fc=.5 Cje=22.01p Mje=.377 Vje=.75 Tr=46.91n Tf=411.1p Itf=.6 Vtf=1.7
Xtf=3 Rb=10)
© 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com
BSR14 Rev. B0 2
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