Fairchild BS170, MMBF170 service manual
April 1995
S
BS170 / MMBF170
N-Channel Enhancement Mode Field Effect Transistor
General Description Features
These N-Channel enhancement mode field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. These products have been
designed to minimize on-state resistance while provide
rugged, reliable, and fast switching performance. They can
be used in most applications requiring up to 500mA DC.
High density cell design for low R
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capability.
These products are particularly suited for low voltage, low
current applications such as small servo motor control,
power MOSFET gate drivers, and other switching
applications.
_______________________________________________________________________________
DS(ON)
.
D
G
Absolute Maximum Ratings T
Symbol Parameter BS170 MMBF170 Units
V
DSS
V
DGR
V
GSS
I
D
P
D
TJ,T
T
L
THERMAL CHARACTERISTICS
R
JA
θ
Drain-Source Voltage 60 V
Drain-Gate Voltage (RGS < 1MΩ)
Gate-Source Voltage ± 20 V
Drain Current - Continuous 500 500 mA
- Pulsed 1200 800
Maximum Power Dissipation 830 300 mW
Derate Above 25°C 6.6 2.4 mW/°C
Operating and Storage Temperature Range -55 to 150 °C
STG
Maximum Lead Temperature for Soldering
Purposes, 1/16" from Case for 10 Seconds
Thermal Resistacne, Junction-to-Ambient 150 417 °C/W
= 25°C unless otherwise noted
A
60 V
300 °C
© 1997 Fairchild Semiconductor Corporation
BS170 Rev. C / MMBF170 Rev. D
Electrical Characteristics (T
= 25°C unless otherwise noted)
A
Symbol Parameter Conditions Type Min Typ Max Units
OFF CHARACTERISTICS
BV
I
DSS
I
GSSF
DSS
Drain-Source Breakdown Voltage VGS = 0 V, ID = 100 µA All 60 V
Zero Gate Voltage Drain Current
Gate - Body Leakage, Forward
VDS = 25 V, V
GS
= 0 V
VGS = 15 V, VDS = 0 V
All 0.5 µA
All 10 nA
ON CHARACTERISTICS (Note 1)
V
R
g
GS(th)
DS(ON)
FS
Gate Threshold Voltage VDS = VGS, ID = 1 mA All 0.8 2.1 3 V
Static Drain-Source On-Resistance
Forward Transconductance
VGS = 10 V, ID = 200 mA
VDS = 10 V, ID = 200 mA
VDS > 2 V
, ID = 200 mA MMBF170 320
DS(on)
All 1.2 5
BS170 320 mS
Ω
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance All 17 30 pF
VDS = 10 V, VGS = 0 V,
f = 1.0 MHz
Reverse Transfer Capacitance All 7 10 pF
All 24 40 pF
SWITCHING CHARACTERISTICS (Note 1)
t
on
t
off
Note:
1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
Turn-On Time
Turn-Off Time
VDD = 25 V, ID = 200 m A,
VGS = 10 V, R
GEN
= 25 Ω
VDD = 25 V, ID = 500 mA,
VGS = 10 V, R
GEN
= 50 Ω
VDD = 25 V, ID = 200 m A,
VGS = 10 V, R
GEN
= 25 Ω
VDD = 25 V, ID = 500 mA,
VGS = 10 V, R
GEN
= 50 Ω
BS170 10 ns
MMBF170 10
BS170 10 ns
MMBF170 10
BS170 Rev. C / MMBF170 Rev. D
D
Typical Electrical Characteristics
BS170 / MMBF170
2
1.5
1
0.5
I , DRAIN-SOURCE CURRENT (A)
0
0 1 2 3 4 5
V = 10V
GS
9.0
8.0
7.0
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 1. On-Region Characteristics.
2
V = 10V
1.75
1.5
1.25
DS(ON)
R , NORMALIZED
0.75
DRAIN-SOURCE ON-RESISTANCE
0.5
GS
I = 500mA
D
1
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
6.0
5.0
4.0
3.0
3
V =4.0V
GS
2.5
4.5
5.0
6.0
2
1.5
DS(on)
R , NORMALIZED
1
DRAIN-SOURCE ON-RESISTANCE
0.5
0 0.4 0.8 1.2 1.6 2
I , DRAIN CURRENT (A)
D
7.0
Figure 2. On-Resistance Variation with Gate Voltage
and Drain Current.
3
V = 10V
2.5
1.5
DS(on)
R , NORMALIZED
0.5
DRAIN-SOURCE ON-RESISTANCE
GS
T = 125°C
2
J
25°C
1
-55°C
0
0 0.4 0.8 1.2 1.6 2
I , DRAIN CURRENT (A)
D
8.0
9.0
10
Figure 3. On-Resistance Variation
with Temperature.
2
V = 10V
DS
1.6
1.2
0.8
D
I , DRAIN CURRENT (A)
0.4
0
0 2 4 6 8 10
V , GATE TO SOURCE VOLTAGE (V)
GS
T = -55°C
J
25°C
125°C
Figure 4. On-Resistance Variation with Drain
Current and Temperature.
1.1
1.05
1
0.95
th
0.9
V , NORMALIZED
0.85
GATE-SOURCE THRESHOLD VOLTAGE
0.8
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
Figure 5. Transfer Characteristics. Figure 6. Gate Threshold Variation with
Temperature.
V = V
DS GS
I = 1 mA
D
BS170 Rev. C / MMBF170 Rev. D
1.1
I = 100µA
D
1.075
1.05
1.025
1
DSS
BV , NORMALIZED
0.975
0.95
DRAIN-SOURCE BREAKDOWN VOLTAGE
0.925
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
2
V = 0V
GS
1
0.5
T = 125°C
0.1
0.05
0.01
0.005
S
I , REVERSE DRAIN CURRENT (A)
0.001
J
25°C
-55°C
0.2 0.4 0.6 0.8 1 1.2 1.4
V , BODY DIODE FORWARD VOLTAGE (V)
SD
60
40
C
20
10
5
CAPACITANCE (pF)
2
1
f = 1 MHz
V = 0V
GS
1 2 3 5 10 20 30 50
V , DRAIN TO SOURCE VOLTAGE (V)
DS
iss
C
oss
C
rss
10
I =500mA
D
8
6
4
2
GS
V , GATE-SOURCE VOLTAGE (V)
0
0 0.4 0.8 1.2 1.6 2
Q , GATE CHARGE (nC)
g
V = 25V
DS
BS170 Rev. C / MMBF170 Rev. D
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