Fairchild BCX71K service manual

BCX71K

C

BCX71K

E

SOT-23

Mark: BK

B

PNP General Purpose Amplifier

This device is designed for applications requiring extremely
high current gain at collector currents to 300 mA. Sourced
from Process 68.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol Parameter Value Units

V

CEO

V

CES

V

EBO

I

C

TJ, T

stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

3) All voltages (V) and currents (A) are negative polarity for PNP transistors.

Collector-Emitter Voltage 45 V
Collector-Base Voltage 45 V
Emitter-Base Voltage 5.0 V
Collector Current - Continuous 500 mA
Operating and Stora ge Junction Temperature Range -55 to +150

°

C

3

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol Characteristic Max Units

*BCX71K

P

D

R

θ

JA

*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.

1997 Fairchild Semiconductor Corporation

Total Device Dissipation

Derate above 25°C

Thermal Resistance , Junctio n to Ambient 357

350

2.8

mW

mW/°C

C/W

°

µ

PNP General Purpose Amplifier

(continued)

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Max Units

OFF CHARACTERISTICS

V

(BR)CEO

V

(BR)EBO

I

CES

ON CHARACTERISTICS

h

FE

V

sat

CE(

V

sat

BE(

V

BE(on)

Collector-Emitter Breakd own Voltage IC = 1.0 mA, IB = 0 45 V
Emitter-Base Breakdown Voltage

= 10 µA, IC = 0

I

E

5.0 V

Collector-Cutoff Current VCB = 45 V, IE = 0

V

= 45 V, IE = 0, TA = 100°C

CB

DC Current Gain

Collector-Emitter Saturation Voltage IC = 10 mA, IB = 0.25 mA

)

Base-Emitter Saturatio n Voltage IC = 10 mA, IB = 0.25 mA

)

I

= 10 µA, VCE = 5.0 V

C

I

= 2.0 mA, VCE = 5.0 V

C

I

= 50 mA, VCE = 1.0 V

C

I

= 50 mA, IB = 1.25 mA

C

I

= 50 mA, IB = 1.25 mA

C

100
380
110

0.06

0.12

0.6

0.68

Base-Emitter On Voltage IC = 2.0 mA, VCE = 5.0 V 0.6 0.75 V

20
20

630

0.25

0.55

0.85

1.05

nA

A

V
V
V
V

BCX71K

SMALL SIGNAL CHARACTERISTICS

C

obo

NF Noise Figure IC = 0.2 mA, VCE = 5.0 V,

Output Capacitance VCE = 10 V, IC = 0, f = 1.0 MHz 6.0 pF

R

= 2.0 kΩ, f = 1.0 kHz,

S

BW = 200 Hz

SWITCHING CHARACTERISTICS

t

(on)

t

(off)

NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.

Turn-On Time IC = 10 mA, IB1 = 1.0 mA 150 ns
Turn-Off Time IB2 = 1.0 mA, VBB = 3.6 V,

R1 = R2 = 5. 0 kΩ, R

= 990

L

T ypical Characteristics

Typical Pulsed Current Gain

vs Collector Current

500

125 °C

400

300

25 °C

200

- 40 °C

100

0

FE

0.01 0.1 1 10 100

h - TYPICAL PULSED CURRENT GAIN

I - COLLECTOR CURRENT (mA)

C

V = 5V

CE

C olle c tor-E mitte r S at urat ion
Voltage vs Collector Curre nt

0.3

V - COLLECT O R EMITTER VOL TAG E ( V)

0.25

0.15

0.05

CESAT

β

0.2

0.1

0

0.1 1 10 100 300

6.0 dB

800 ns

Ω

= 10

25 °C

125 °C

I - COLLECTOR CURRENT (mA)

C

- 40 °C