Fairchild BCX70H service manual
BCX70H
BCX70H
General Purpose Transistor
3
2
SOT-23
1
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
P
C
T
STG
• Refer to KST3904 for graphs
Collector-Base Voltage 45 V
Collector-Emitter Voltage 45 V
Emitter-Base Voltage 5 V
Collector Current 200 mA
Collector Power Dissipation 350 mW
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Max. Units
BV
CEO
BV
EBO
I
CES
I
EBO
h
FE
V
(sat) Collector-Emitter Saturation Voltage IC=10mA, IB=0.25mA
CE
(sat) Base-Emitter Saturation Voltage IC=10mA, IB=0.25mA
V
BE
(on) Base-Emitter On Voltage VCE=5V, IC=2.0mA 0.55 0.75 V
V
BE
f
T
C
ob
NF Noise Figure V
t
ON
t
OFF
Collector-Emitter Breakdown Voltage IC=2.0mA, IB=0 45 V
Emitter-Base Breakdown Voltage IE=1.0µA, IC=0 5 V
Collector Cut-off Current VCE=32V, VBE=0 20 nA
Emitter Cut-off Current VEB=4V, IC=0 20 nA
DC Current Gain VCE=5V, IC=10µA
Current Gain Bandwidth Product VCE=5V, IC=10mA, f=100MHz 125 MHz
Output Capacitance VCE=10V, IE=0, f=1MHz 4.5 pF
Turn On Time IC=10mA, IB1=1.0mA 150 ns
Turn Off Time VBB=3.6V, IB2=1.0mA
=25°C unless otherwise noted
a
Ta=25°C unless otherwise noted
V
=5V, IC=2.0mA
CE
=1V, IC=50mA
V
CE
=50mA, IB=1.25mA
I
C
I
=50mA, IB=1.25mA
C
=5V, IC=0.2mA
CE
=2KΩ, f=1KHz
R
S
=5KΩ, RL=990Ω
R
1=R2
20
180
70
0.6
0.7
310
0.35
0.55
0.85
1.05
6dB
800 ns
V
V
V
V
Marking
AH
©2002 Fairchild Semiconductor Corporation Rev. B2, December 2002
Package Dimensions
BCX70H
SOT-23
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. B2, December 2002
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