Fairchild BCX70G service manual
BCX70G
BCX70G
General Purpose Transistor
3
2
SOT-23
1
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
P
C
T
STG
• Refer to KST5088 for graphs
Collector-Base Voltage 45 V
Collector-Emitter Voltage 45 V
Emitter-Base Voltage 5 V
Collector Current 200 mA
Collector Power Dissipation 350 mW
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Tes t Condition Min. Max. Units
BV
CEO
BV
EBO
I
CES
I
EBO
h
FE
V
(sat) Collector-Emitter Saturation Voltage IC=10mA, IB=0.25mA
CE
(sat) Base-Emitter Saturation Voltage IC=10mA, IB=0.25mA
V
BE
V
(on) Base-Emitter On Voltage IC=2mA, VCE=5V 0.55 0.75 V
BE
f
T
C
ob
NF Noise Figure I
t
ON
t
OFF
Collector-Emitter Breakdown Voltage IC=2mA, IB=0 45 V
Emitter-Base Breakdown Voltage IE=1µA, IC=0 5 V
Collector Cut-off Current VCE=32V, VBE=0 20 nA
Emitter Cut-off Current VEB=4V, IC=0 20 nA
DC Current Gain VCE=5V, IC=2mA
Current Gain Bandwidth Product VCE=5V, IC=10mA 125 M Hz
Output Capacitance VCB=10V, IE=0, f=1MHz 4.5 pF
Turn On Time IC=10mA, IB1=1mA 150
Turn Off Time IB2=1mA, VBB=3.6V
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
=1V, IC=50mA
V
CE
I
=50mA, IB=1.25mA
C
=50mA, IB=1.25mA
I
C
=0.2mA, VCE=5V
C
f=1KHz, R
R
L
S
=990Ω R1=R2=5KΩ
=2KΩ
120
60
0.6
0.7
220
0.35
0.55
0.85
1.05
6dB
800 ns
V
V
V
V
ns
Marking
AG
©2002 Fairchild Semiconductor Corporation Rev. B2, December 2002
Package Dimensions
BCX70G
SOT-23
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. B2, December 2002
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