Fairchild BCX20, BCX20 Schematic [ru]
BCX20
NPN Epitaxial Silicon Transistor
Switching and Amplifier Applications
3
1. Base 2. Emitter 3. Collector
1
BCX20 NPN Epitaxial Silicon Transistor
January 2005
2
SOT-23
Marking: U2
Absolute Maximum Ratings
Ta = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CES
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Electrical Characteristics
Collector-Emitter Voltage 30 V
Collector-Emitter Voltage 25 V
Emitter-Base Voltage 5 V
Collector Current (DC) 800 A
Collector Dissipation 310 W
Junction Temperature 150 °C
Storage Temperature -65 ~ 150 °C
TC = 25°C unless otherwise noted
Symbol Parameter Conditions Min. Max Units
BV
BV
BV
I
CBO
I
EBO
h
FE1
h
FE2
h
FE3
V
CE(sat)
V
BE(on)
CEO
CES
EBO
Collector-Emitter Breakdown Voltage IC = 10mA, IB = 0 25 V
Collector-Emitter Breakdown Voltage IC = 100µA, VBE = 0 30 V
Emitter-Base Breakdown Voltage IE = 10µA, IC = 0 5 V
Collector Cut-off Current VCE = 20V, VBE = 0 100 nA
Emitter-Base Cut-off Current VBE =5V, IC = 0 10 nA
DC Current Gain VCE = 1V, IC = 100mA
= 1V, IC = 300mA
V
CE
V
= 1V, IC = 500mA
CE
100
70
40
600
Collector-Emitter Saturation Voltage IC = 500mA, IB = 50mA 0.62 V
Base-Emitter Saturation Voltage VCE = 1A, IB = 500mA 1.2 V
©2005 Fairchild Semiconductor Corporation
BCX20 Rev. A
1
www.fairchildsemi.com
Mechanical Dimensions
BCX20 NPN Epitaxial Silicon Transistor
SOT-23
BCX20 Rev. A
Dimensions in Millimeters
2
www.fairchildsemi.com
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