Fairchild BCW89 service manual
BCW89
PNP General Purpose Amplifier
• This device is designed for general purpose medium power amplifiers
and switches requiring collector currents to 300mA.
• Sourced from process 68.
3
2
SOT-23
1
Mark: H3
1. Base 2. Emitter 3. Collector
BCW89
Absolute Maximum Ratings * T
=25°C unless otherwise noted
C
Symbol Parameter Value Units
V
CEO
V
CES
V
EBO
I
C
, T
T
J
stg
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
Collector-Emitter Voltage -60 V
Collector-Emitter Voltage -60 V
Emitter-Base Voltage -5.0 V
Collector current - Continuous -500 mA
Junction and Storage Temperature -55 ~ +150 °C
TC=25°C unless otherwise noted
Symbol Parameter Test Condition Mi n. Max. Units
Off Characteristics
V
(BR)CBO
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
I
CBO
Collector-Base Breakdown Voltage IC = -10µA, IE = 0 -80 V
Collector-Emitter Breakdown Voltage IC = -2.0mA, IB = 0 -60 V
Collector-Emitter Breakdown Voltage IC = -10µA, IE = 0 -60 V
Emitter-Base Breakdown Voltage IC = -10µA, IC = 0 -5.0 V
Collector Cutoff Current VCB = -20V, IE = 0
= -20V, IE = 0, TA = +100°C
V
CB
-100
-10
On Characteristics
h
FE
V
CE(sat)
V
BE(on)
DC Current Gain VCE = -5.0V, IC = -2.0mA 120 260
Collector-Emitter Saturation Voltage IC = -10mA, IB = -0.5mA -0.3 V
Base-Emitter On Voltage VCE = -5.0V, IC = -2.0mA -0.6 -0.75 V
Small Signal Characteristics
NF Noise Figure V
= -5.0V, IC = -200µA
CE
R
= 2.0kΩ, f = 1.0kHz
S
= 200Hz
B
W
10 dB
nA
µA
Thermal Characteristics
TA=25°C unless otherwise noted
Symbol Parameter Max. Units
P
D
R
θJA
©2003 Fairchild Semiconductor Corporation Rev. A, May 2003
Total Device Dissipation
Derate above 25°C
350
2.8
mW
mW/°C
Thermal Resistance, Junction to Ambient 357 °C/W
Package Dimensions
BCW89
SOT-23
Dimensions in Millimeters
©2003 Fairchild Semiconductor Corporation Rev. A, May 2003
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