Fairchild BCW61A, BCW61A, BCW61B, BCW61B, BCW61C Schematic [ru]
...
BCW61A/B/C/D
General Purpose Transistor
PNP Epitaxial Silicon Transistor
3
2
SOT-23
1. Base 2. Emitter 3. Collector
1
BCW61A/B/C/D
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
P
C
T
STG
• Refer to KST5086 for graphs
Collector-Base Voltage -32 V
Collector-Emitter Voltage -32 V
Emitter-Base Voltage -5.0 V
Collector Current -100 mA
Collector Power Dissipation 350 mW
Storage Temperature -55 ~ 150 °C
Ta=25°C unless otherwise noted
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
BCW61A/B/C/D
Electrical Characteristics T
=25°C unless otherwise noted
a
Symbol Parameter Tes t Condition Min. Max. Units
BV
CEO
BV
EBO
I
CES
h
FE
V
(sat) Collector-Emitter Saturation Voltage IC= -50mA, IB= -1.25mA
CE
(sat) Base-Emitter Saturation Voltage IC= -50mA, IB= -1.25mA
V
BE
(on) Base-Emitter On Voltage VCE= -5V, IC= -2mA 0.6 0.75 V
V
BE
C
ob
Collector-Emitter Breakdown Voltage IC= -2mA, IB=0 -32
Emitter-Base Breakdown Voltage IE= -1µA, IC=0 -5
Collector Cut-off Current VCB= -32V , VBE=0 -20
DC Current Gain
: BCW61B
: BCW61C
: BCW61D
: BCW61A
: BCW61B
: BCW61C
: BCW61D
: BCW61A
: BCW61B
: BCW61C
: BCW61D
= -5V, IC= -10µA
V
CE
= -5V, IC= -2mA
V
CE
V
= -5V, IC= -50mA
CE
20
40
100
120
140
250
380
60
80
100
100
220
310
460
630
-0.55
= -10mA, IB= -0.25mA
I
C
= -10mA, IB= -0.25mA
I
C
Output Capacitance VCB= -10V , IE=0
0.68
0.6
-0.25
1.05
0.85
6pF
f=1MHz
NF Noise Figure I
t
ON
t
OFF
Turn On Time IC= -10mA, IB1= -1mA 150 ns
Turn Off Time VBB= -3.6V, B22= -1mA
= -0.2mA, VCE= -5V
C
=20KΩ, f=1KHz
R
G
R1=R2=5.0KΩ, R
=990Ω
L
6dB
800 ns
V
V
nA
V
V
V
V
Marking Code
Type BCW61A BCW61B BCW61C BCW61D
Mark. BA BB BC BD
Marking
BA
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
Loading...