Fairchild BC81716MTF, BC81725MTF, BC81740MTF, BC81816MTF, BC81825MTF Schematic [ru]
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November 2006
BC817/BC818
NPN Epitaxial Silicon Transistor
Features
• Switching and Amplifier Applications
• Suitable for AF-Driver stages and low power output stages
• Complement to BC807/ BC808
Absolute Maximum Ratings* T
= 25°C unless otherwise noted
a
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Collector-Base Voltage
: BC817
: BC818
50
30
Collector-Emitter Voltage
: BC817
: BC818
45
25
Emitter-Base Voltage 5 V
Collector Current (DC) 800 mA
Collector Power Dissipation 310 mW
Junction Temperature 150 °C
Storage Temperature -65 ~ 150 °C
3
SOT-23
1
1. Base 2. Emitter 3. Collector
BC817/BC818 NPN Epitaxial Silicon Transistor
2
V
V
V
V
Electrical Characteristics* T
=25°C unless otherwise noted
a
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CEO
BV
CES
BV
EBO
I
CES
I
EBO
h
FE1
h
FE2
V
CE
V
BE
f
T
C
ob
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
Collector-Emitter Breakdown Voltage
: BC817
: BC818
Collector-Emitter Breakdown Voltage
: BC817
: BC818
IC=10mA, IB=0
45
25
IC=0.1mA, VBE=0
50
30
Emitter-Base Breakdown Voltage IE=0.1mA, IC=0 5 V
Collector Cut-off Current VCE=25V, VBE=0 100 nA
Emitter Cut-off Current VEB=4V, IC=0 100 nA
DC Current Gain VCE=1V, IC=100mA
VCE=1V, IC=300mA
100
60
630
(sat) Collector-Emitter Saturation Voltage IC=500mA, IB=50mA 0.7 V
(on) Base-Emitter On Voltage VCE=1V, IC=300mA 1.2 V
Current Gain Bandwidth Product VCE=5V, IC=10mA
100 MHz
f=50MHz
Output Capacitance VCB=10V, f=1MHz 12 pF
V
V
V
V
©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
BC817/BC818 Rev. B
h
Classification
FE
Classification 16 25 40
h
FE1
h
FE2
110 ~ 250 160 ~ 40 0 250 ~ 630
60~ 100~ 170~
Ordering Information
Device(note1) Device Marking Package Packing Method Qty(pcs) Pin Difinitions
BC81716MTF 8FA SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
BC81725MTF 8FB SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
BC81740MTF 8FC SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
BC81816MTF 8GA SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
BC81825MTF 8GB SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
BC81840MTF 8GC SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
Note1 : Affix “-16,-25,-40” means hFE classification.
Affix “-M” means the matte type package.
Affix “-TF” means the tape & reel type packing .
BC817/BC818 NPN Epitaxial Silicon Transistor
BC817/BC818 Rev. B
2 www.fairchildsemi.com
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