Datasheet BC81716MTF, BC81725MTF, BC81740MTF, BC81816MTF, BC81825MTF Datasheet (Fairchild) [ru]

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tm
November 2006
BC817/BC818
NPN Epitaxial Silicon Transistor Features
• Switching and Amplifier Applications
• Suitable for AF-Driver stages and low power output stages
• Complement to BC807/ BC808
Absolute Maximum Ratings* T
= 25°C unless otherwise noted
a
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Collector-Base Voltage
: BC817 : BC818
50 30
Collector-Emitter Voltage
: BC817 : BC818
45
25 Emitter-Base Voltage 5 V Collector Current (DC) 800 mA Collector Power Dissipation 310 mW Junction Temperature 150 °C Storage Temperature -65 ~ 150 °C
3
SOT-23
1
1. Base 2. Emitter 3. Collector
BC817/BC818 NPN Epitaxial Silicon Transistor
2
V V
V V
Electrical Characteristics* T
=25°C unless otherwise noted
a
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CEO
BV
CES
BV
EBO
I
CES
I
EBO
h
FE1
h
FE2
V
CE
V
BE
f
T
C
ob
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
Collector-Emitter Breakdown Voltage
: BC817 : BC818
Collector-Emitter Breakdown Voltage
: BC817 : BC818
IC=10mA, IB=0
45 25
IC=0.1mA, VBE=0
50
30 Emitter-Base Breakdown Voltage IE=0.1mA, IC=0 5 V Collector Cut-off Current VCE=25V, VBE=0 100 nA Emitter Cut-off Current VEB=4V, IC=0 100 nA DC Current Gain VCE=1V, IC=100mA
VCE=1V, IC=300mA
100
60
630
(sat) Collector-Emitter Saturation Voltage IC=500mA, IB=50mA 0.7 V (on) Base-Emitter On Voltage VCE=1V, IC=300mA 1.2 V
Current Gain Bandwidth Product VCE=5V, IC=10mA
100 MHz
f=50MHz
Output Capacitance VCB=10V, f=1MHz 12 pF
V V
V V
©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
BC817/BC818 Rev. B
h
Classification
FE
Classification 16 25 40
h
FE1
h
FE2
110 ~ 250 160 ~ 40 0 250 ~ 630
60~ 100~ 170~
Ordering Information
Device(note1) Device Marking Package Packing Method Qty(pcs) Pin Difinitions
BC81716MTF 8FA SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC81725MTF 8FB SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC81740MTF 8FC SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC81816MTF 8GA SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC81825MTF 8GB SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC81840MTF 8GC SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
Note1 : Affix “-16,-25,-40” means hFE classification. Affix “-M” means the matte type package. Affix “-TF” means the tape & reel type packing .
BC817/BC818 NPN Epitaxial Silicon Transistor
BC817/BC818 Rev. B
2 www.fairchildsemi.com
Typical Performance Characteristics
BC817/BC818 NPN Epitaxial Silicon Transistor
600
BC81725MTF
500
400
300
hfe, Current Gain
200
75oC
100
-25oC
0
1 10 100 1000
25oC
Vce=1V
125oC
Collector Current, [mA]
1.0
VCE = 1V
0.9
0.8
0.7
0.6
0.5
0.4
Vbe(on), Base-Emitter On Voltage,[V]
0.3 110100
25oC
75oC
125oC
Collector Current, [mA]
Figure 1. DC current Gain Figure 2. Base-Emitter On Voltage
Ic=10Ib
0.4
125oC
0.3
0.2
75oC
25oC
-25oC
0.1
Vce(sat), Saturation Voltage,[V]
0.0 10 100 1000
Collector Current, [mA]
1.2
Ic=10Ib
1.0
0.8
0.6
-25oC
25oC
75oC
Vbe(sat), Saturation Voltage,[V]
0.4
10 100 1000
Collector Current, [mA]
Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Saturation Voltage
125oC
0.4
0.3
0.2
- Power Dissipation (W)
0.1
D
P
0.0 0 25 5 0 75 100 125 150
Figure 5. Power Dissipation vs Ambient Temperature
BC817/BC818 Rev. B
Temperature, [ OC]
3 www.fairchildsemi.com
Mechanical Dimensions
0
F
3
N
0.40
±0.03
BC817/BC818 NPN Epitaxial Silicon Transistor
SOT-23
0.20 MI
0.45~0.60
0.95
2.90
±0.03
1.90
±0.10
0.95
±0.03
±0.03
±0.10
0.40
±0.03
0.97REF 1.30
0.508REF
±0.10
2.40
0.96~1.14
0.03~0.1
0.38 RE
+0.05
0.12
–0.02
BC817/BC818 Rev. B
Dimensions in Millimeters
4 www.fairchildsemi.com
FAIRCHILD SEMICONDUCTOR TRADEMARKS
The following are registered and unregistered trademark s Fairchild Semic onduct or owns or is autho rized to use an d is not inten ded to be an exhaustive list of all such trademarks.
ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™
2
E
CMOS™
EnSigna™
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FACT
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FAST FASTr™ FPS™ FRFET™
FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™
2
I
C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™
Across the board. Around the world.™ The Power Franchise
®
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®
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SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ TinyBoost™ TinyBuck™ TinyPWM™ TinyPower™ TinyLogic
®
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER IT S PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF F AIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPE­CIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
BC817/BC818 NPN Epitaxial Silicon Transistor
BC817/BC818 NPN Epitaxial Silicon Transistor
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expecte d to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectivene ss.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In Design This datasheet contains the design specifications for
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
product development. Specifications may change in any manner without notice.
supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Semiconductor reserves the right to make changes at any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
BC817/BC818 Rev. B
Rev. I21
5 www.fairchildsemi.com
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