Fairchild BAR43, BAR43A, BAR43C, BAR43S service manual

BAR43/A/C/S Schottky Diodes
SOT-23
MARKING
BAR43 D95 BAR43A DB1 BAR43C DB2 BAR43S DA5
BAR43/A/C/S — Schottky Diodes
October 2009
Connection Diagram
Absolute Maximum Ratings* T
A
Symbol Parameter Value Units
V
RRM
I
F(AV)
I
FSM
T
J
T
STG
*These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Thermal Characteristics T
Maximum Repetitive Reverse Voltage 30 V Average Rectified Forward Current 200 mA
Non Repetitive Peak Forward Current
750 mA
Pulse Width = 1.0 second Operating Junction Temperatur e 150 °C Storage Temperature Range -55 to +150 °C
=25°C unless otherwise noted
A
Symbol Parameter Value Units
P
D
R
θJA
Power Dissipation 290 mW Thermal Resistance, Junction to Ambient 430 °C/W
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com BAR43/A/C/S Rev. C3 1
BAR43/A/C/S — Schottky Diodes
Electrical Characteristics T
=25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min. Max. Units
V
R
V
F
I
R
t
rr
Minimum Detection Recovery Time I
Breakdown Voltage IR = 100μA30V
260 330
450
0.8
0.5
100
5.0 ns
80%
Forward Voltage
Reverse Leakage
Reverse Recovery Time
= IR = 100mA, IRR = 1.0mA, RL = 100
F
I
= 2.0mA
F
= 15mA
I
F
= 100mA
I
F
= 25V
V
R
= 25V, TA=100°C
V
R
= IR = 100mA, IRR = 1.0mA
I
F
= 100
R
L
Typical Performance Characteristics
Figure 1. Forward Voltage vs Temperature Figure 2. Reverse Leakage Current
vs Temperature
-1
10
-2
10
-3
10
-25oC
0
-3
10
10
-1
-4
10
10
-2
-5
10
10
125oC
100oC
75oC
mV mV
V
μA
-4
10
-Forward Cu rre nt [A ]
F
I
-5
10
-6
10
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
25oC
75oC
100oC
VF-Forward Voltage [V]
Figure 3. Capacitance vs Reverse Bias Voltage
16
14
12
10
8
6
Capacitance [pF]
4
2
012345678910
-3
-6
10
10
-4
-7
10
10
-Reverse Leakage Current [A]
R
I
-5
-8
10
10
VR-Reverse Voltage [V]
-25oC
0 5 10 15 20 25 30
VR-Reverse Voltage [V]
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com BAR43/A/C/S Rev. C3 2
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