Eudyna FRM5N143DS User Manual

FEATURES

• Integrated Design Optimizes Performance at
High Bit Rates up to 10 Gb/s applications.

• -25 dBm Typical Sensitivity

• -7 dBm Overload Power (typ.)

• 27 dB Optical Return Loss (ORL)

• Integral Thermistor

• Simplifies Receiver Circuit Design

• Integrated HBT IC preamp

APPLICATIONS

This 80GHz gain bandwidth product APD detector with HBT preamp
is intended to function as an optical receiver for DWDM, SONET, SDH
optical fiber systems operating at 10Gb/s. This detector operates at both
1310 and 1550nm. The nominal 10kΩ integral thermistor allows accurate
monitoring of the APD temperature and facilitates the design of the APD
bias control circuit. It has a typical transimpedance (Zt) value of 1100Ω
The detector preamplifier is DC coupled and has a differential electrical output.

DESCRIPTION

The FRM5N143DS incorporates a high bandwidth InGaAs APD photo diode, a GaAs
HBT IC amplifier in a hermetically sealed butterfly type package. The APD is processed
with modern MOVPE techniques resulting in reliable performance over a wide range of
operating conditions. The lens coupling system and the single mode fiber are assembled
using Nd YAG welding. It has differential output with DC coupling.

1

Edition 1.1
July 2004

InGaAs-APD/Preamp
Receiver

FRM5N143DS

查询FRM5N143DS供应商

2

InGaAs-APD/Preamp

Receiver

FRM5N143DS

Parameter

Storage Temperature

Operating Temperature

Supply Voltage

APD Reverse Voltage

Symbol

T

stg

-40 to +85

0 to +70

-6 to 0

0 to VB (Note 1)

V

V

°C

°C

T

op

V

ss

V

R

APD Reverse Current

1.0 mA

I

R

Ratings Unit

ABSOLUTE MAXIMUM RATINGS (Tc=25°C)

Parameter Symbol

OPTICAL & ELECTRICAL CHARACTERISTICS (Tc=25°C, λ=1,550nm, Vss=-5.2V, unless
otherwise specified)

Unit

Limits

Max.

Power Supply Current

I

ss

mA110 130--

-

Optical Return Loss

ORL

dB--27

Min. Typ.

Test Conditions

APD Responsivity

R15 A/W-0.65 0.71,550nm, M=1

V

-5.2

-

Power Supply Voltage

V

ss

-4.94

-5.46

kΩ

10

Vss=0V

Thermistor Resistance

R

tr

10.5

9.5

Sensitivity

P

r

dBm-25 -24-

NRZ, 10Gb/s,

PRBS=2

23

-1,

B.E.R.=10

-10

,

VR is set at

optimum value

Maximum Overload

P

o

dBm--8 -7

NRZ, 10Gb/s,

PRBS=2

23

-1,

B.E.R.=10

-10

, M = 3

Bandwidth

BW GHz-7.5 8.0

RL=50Ω, M=9,

-3dB from 130MHz,
Pin = -20dBm

AC Transimpedance

Z

t

Ω

800 14001100

RL=50Ω,

f=130MHz,

Temperature Coefficient of VB

Γ

V/°C0.03 0.070.05(Note 2)

APD Breakdown Voltage

V

B

V20 3530ID=10µA

Note: (1) VB differs from device to device. VB data is attached to each devices.

(2) Γ=dVB/dTC

Vss=0V

Thermistor B Constant

BK4,0003,800 3,900

Fig. 5 Bit Error Rate

Bit Error Rate

Received Optical Power (dBm)

-26 -24 -22

70°C

0°C

25°C

-28-30

10

-12

10

-10

10

-8

10

-7

10

-6

10

-5

10

-4

10

-3

λ=1,550nm

9.95328Gb/s, NRZ
duty, mark density=0.5
Vss=-5.2V
M=optimum

Fig. 3 Relative Frequency Response

Relative Response (3dB/div)

Frequency, f (GHz)

15

10

M=9

M=6

M=3

5

1

Tc = 25°C
Vss=-5.2V
RL=50Ω
Pin=-27dBm
λ = 1,550nm

Fig. 2 Multiplication Characteristics

Multiplication Factor (M)

Reverse Voltage VR(V)

30 40

2010

0

0.1

1

10

100

Vss=-5.2V
Ipo=2µA

70°C

0°C

25°C

Photocurrent (A)

Tc=25°C
Vss=-5.2V

Fig. 1 Multiplication vs. Photocurrent

Reverse Voltage VR(V)

30 40

2010

1.0E-06

1.0E-05

1.0E-04

1.0E-03

1.0E-02

1

Pin = -7dBm

-10dBm

-13dBm

-20dBm

-27dBm

Bandwidth (GHz)

Tc=25°C
Vss=-5.2V
RL=50Ω
λ=1,550nm
Pin=-27dBm

Fig. 4 Multiplication vs. Bandwidth

Multiplication Factor (M)

100

10

1

10

100

1

GB Product 80GHz

3

InGaAs-APD/Preamp
Receiver

FRM5N143DS