Eudyna FLM5964-18F User Manual

FEATURES

• High Output Power: P

1dB

= 43.0dBm (Typ.)

• High Gain: G

1dB

= 10.0dB (Typ.)

• High PAE: η

add

= 37% (Typ.)

• Low IM3= -46dBc@Po = 32.0dBm

• Broad Band: 5.9 ~ 6.4GHz

• Impedance Matched Zin/Zout = 50Ω

• Hermetically Sealed Package

1

Edition 1.2 August 2004

FLM5964-18F

C-Band Internally Matched FET

Item

Drain-Source Voltage

Gate-Source Voltage

Total Power Dissipation

Storage Temperature

Channel Temperature

Symbol

V

DS

V

GS

15

-5

83.3

-65 to +175

175

Tc = 25°C

V

W

°C

P

T

stg

T

ch

Condition Unit

Rating

ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)

Eudyna recommends the following conditions for the reliable operation of GaAs FETs:

1. The drain-source operating voltage (VDS) should not exceed 10 volts.

2. The forward and reverse gate currents should not exceed 48.0 and -8.4 mA respectively with

DESCRIPTION

The FLM5964-18F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system.

Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance.

Item

Saturated Drain Current

Transconductance

Pinch-off Voltage

Gate Source Breakdown Voltage

Power-added Efficiency

3rd Order Intermodulation Distortion

Output Power at 1dB G.C.P.

Power Gain at 1dB G.C.P.

Symbol

I

DSS

- 7.5 11.25

- 7500

-

-0.5 -1.5 -3.0

-5.0 - -

9.0 10.0 -

-37-

42.0 43.0 -

VDS = 5V, I

DS

= 250mA

VDS = 5V, I

DS

= 4875mA

VDS = 5V, V

GS

= 0V

IGS = -250µA

VDS =10V, IDS = 0.65I

DSS (Typ.),

f = 5.9 ~ 6.4 GHz, ZS=ZL= 50 ohm

f = 6.4 GHz, ∆f = 10 MHz 2-Tone Test P

out

= 32.0dBm S.C.L.

A

mS

V

dB

%

-44 -46 - dBc

dBm

V

g

m

V

p

V

GSO

P

1dB

G

1dB

Drain Current

- 4875 6000 mA

I

dsr

IM

3

η

add

Gain Flatness

--±0.6 dB∆G

Test Conditions Unit

Limit Typ.

Max.Min.

ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)

Channel to Case

Thermal Resistance

- 1.6

1.8

°C/W

R

th

G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level

CASE STYLE: IK

10V x I

dsr

x R

th

Channel Temperature Rise

--

80

°C

∆T

ch

查询FLM5964-18F供应商

2

FLM5964-18F

C-Band Internally Matched FET

POWER DERATING CURVE

500 100 150 200

Case Temperature (°C)

100

80

60

40

20

Total Power Dissipation (W)

OUTPUT POWER & IM3 vs. INPUT POWER

VDS=10V f1 = 6.4 GHz f2 = 6.41GHz 2-tone test

1513 17 19 21 23 25 27 29 31

Input Power (S.C.L.) (dBm)

S.C.L.: Single Carrier Level

28

30

32

34

36

38

40

26

24

22

-60

-50

-40

-30

-20

-10

Output Power (S.C.L.) (dBm)

IM

3

P

out

IM

3

(dBc)

OUTPUT POWER vs. FREQUENCY

Pin=34dBm

32dBm

27dBm

23dBm

33dBm

5.9 6.0 6.2 6.36.1 6.4

Frequency (GHz)

38

40

42

44

46

34

36

32

Output Power (dBm)

VDS=10V P

1dB

OUTPUT POWER vs. INPUT POWER

VDS=10V f = 6.15 GHz

22 24 26 28 30 32 34

36

Input Power (dBm)

42

44

46

40

38

36

34

32

10

20

30

40

50

0

Output Power (dBm)

η

add

P

out

η

add

(%)

3

FLM5964-18F

C-Band Internally Matched FET

S-PARAMETERS

VDS= 10V, IDS= 4875mA

FREQUENCY S11 S21 S12 S22

(MHZ) MAG ANG MAG ANG MAG ANG MAG ANG

5700 .597 172.1 3.400 -18.1 .038 -49.2 .438 -147.7

5800 .583 151.8 3.480 -34.7 .043 -70.2 .407 -164.5

5900 .569 132.1 3.537 -51.2 .049 -89.7 .379 178.5

6000 .552 112.4 3.579 -67.4 .054 -106.8 .351 161.7

6100 .535 93.1 3.612 -83.5 .059 -124.1 .322 144.9

6200 .516 72.6 3.625 -99.5 .064 -141.0 .292 128.2

6300 .502 51.8 3.626 -115.6 .068 -157.9 .261 110.9

6400 .494 30.4 3.596 -131.6 .071 -173.2 .229 93.7

6500 .494 9.4 3.546 -147.5 .074 170.9 .196 75.1

6600 .503 -10.7 3.481 -163.1 .076 155.4 .164 54.6

+j10

0

-j10

+j25

-j25

25

5.8

5.7GHz

5.8

5.7GHz

6.0

6.2

+j50

-j50

50Ω

6.4

6.2

6.6

6.4

100

6.6

+j100

250

-j100

+j250

-j250

S S

180°

11 22

6.4

6.6

6.4

6.6

6.2

0.2

0.1

6.0

6.2

+90°

|

12

SCALE FOR |S

1 2 3 4

5.7GHz

5.8

-90°

SCALE FOR |S21|

5.8

6.0

5.7GHz

S

21

S

12

0°

4

FLM5964-18F

C-Band Internally Matched FET

4-R 1.3±0.15

(0.051)

0.6

(0.024)

14.9

(0.587)

20.4±0.3 (0.803)

24±0.5

(0.945)

5.5 Max. (0.217)

2.4±0.15 (0.094)

0.1

(0.004)

1.4 (0.055)

17.4±0.3

(0.685)

8.0±0.2

(0.315)

2.0 Min.

(0.079)

2.0 Min.

(0.079)

Case Style "IK"

Metal-Ceramic Hermetic Package

Unit: mm(inches)

1. Gate

2. Source (Flange)

3. Drain

1

3

2

Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures:

CAUTION

• Do not put this product into the mouth.

• Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.

• Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures.

For further information please contact:

Eudyna Devices USA Inc.

2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111

www.us.eudyna.com

Eudyna Devices Europe Ltd.

Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888

Eudyna Devices Asia Pte Ltd.

Hong Kong Branch

Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921

Eudyna Devices Inc.

Sales Division 1, Kanai-cho, Sakae-ku Yokohama, 244-0845, Japan TEL: +81-45-853-8156 FAX: +81-45-853-8170

Eudyna Devices Inc. reserves the right to change products and specifications without notice. The information does not convey any license under rights of Eudyna Devices Inc. or others.