Ericsson PTF102028 Datasheet

PTF 102028 18 Watts, 860–960 MHz

GOLDMOS® Field Effect Transistor

Description

The PTF 102028 is an 18–watt GOLDMOS FET intended for large signal amplifier applications 860 to 960 MHz. It operates with 55% efficiency and 15 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability .

Typical Output Pow er & Efficiency vs. Input Power

24 20 16 12

8 4

Output Power (Watts)

0

0.00.30.50.81.0

Outp ut Power Efficiency

VDD = 26 V

= 130 mA

I

DQ

f = 960 MHz

Inp ut Power (Watts)

80 70 60 50 40

Efficiency (%) x

30 20

• Performance at 960 MHz, 26 Volts

- Output Power = 18 Watts Min

- Power Gain = 15 dB Typ

- Efficiency = 55% Typ

• Full Gold Metallization

• Silicon Nitride Passivated

• Excellent Thermal Stability

• Back Side Common Source

• 100% Lot Traceability

102028

1234569855A

Package 20251

RF Specifications (100% T ested)

Characteristic Symbol Min Typ Max Units

Common Source Power Gain

(V

Power Output at 1 dB Compression

(V

Drain Efficiency

(V

Load Mismatch Tolerance

(V all phase angles at frequency of test)

All published data at T

= 26 V , P

DD

= 26 V , IDQ = 130 mA, f = 960 MHz) P-1dB 18 20 — Watts

DD

= 26 V , P

DD

= 26 V , P

DD

= 18 W, IDQ = 130 mA, f = 960 MHz) G

OUT

= 18 W, IDQ = 130 mA, f = 960 MHz) h 50 55 — %

OUT

= 18 W, IDQ = 130 mA, f = 960 MHz— Y — — 5:1 —

OUT

= 25°C unless otherwise indicated.

CASE

ps

14 15 — dB

e

1

PTF 102028

e

Electrical Characteristics (100% T ested)

Characteristic Conditions Symbol Min Typ Max Units

Drain-Source Breakdown Voltage VGS = 0 V , ID = 25 mA V Drain-Source Leakage Current VDS = 28 V , VGS = 0 V I Gate Threshold Voltage VDS = 10 V , ID = 75 mA V Forward Transconductance VDS = 10 V , ID = 0.5 A g

(BR)DSS

DSS

GS(th)

fs

65 ——Volts ——1.0 mA

3.0 — 5.0 Volts — 0.9 — Siemens

Maximum Ratings

Parameter Symbol Value Unit

Drain-Source Voltage V Gate-Source Voltage V Operating Junction T emperature T T otal Device Dissipation P

Above 25°C derate by 0.33 W/°C Storage T emperature T

Thermal Resistance (T

= 70°C) R

CASE

DSS

GS

J

D

STG

qJC

65 Vdc

±20 Vdc

200 °C

58 Watts

150 °C

3.0 °C/W

Typical Performance

Typical P

, Gain & Efficiency

OUT

vs. Frequency

21

Output Pow er

20 19 18 17

Gain

16 15

860 880 900 920 940 960

Gain (dB) & Output Power (W)x

VDD = 26 V IDQ = 130 mA

F requency (MHz)

(at P-1dB )

Efficiency

70 65 60 55 50 45 40 35

Broadba n d Test Fix ture Performa nce

20

16

Gain (dB)

12

Gain

Efficiency (%) x

8

4

920 930 940 950 960

Efficiency (%)

VDD = 26 V

= 130 mA

I

DQ

= 18 W

P

OUT

Ret urn L oss (dB)

F requency (MHz)

60

50

40

30

0

20

- 5

-10 10

-15

-20 0

-25

Efficiency

Return Loss

2

e

102028

Power Ga in vs. Ou tput P ower

16

IDQ = 130

15

IDQ = 65 mA

14

IDQ = 35 mA

VDD = 26 V

13

Power Gain (dB) X

12

0.1 1.0 10.0 100.0

f = 960 MHz

Ou tp u t Power (Watts) X

Inte rmodula tion Distortion vs. Output Power

(as measured in a broadband circuit)

0

VDD = 26 V I

= 130 mA

DQ

f

= 959. 900 MHz

1

f

=960. 000 MHz

2

0 5 10 15 20 25

3rd Order

5th

7th

Outp u t P o wer (Watts-PEP) X

IMD (dBc) X

-10

-20

-30

-40

-50

-60

Output Power (at 1 dB Compression)

vs. S upply Volta ge

24

22

20

18

IDQ = 130 mA

16

f = 960 MHz

Output Power (Watts) X

14

22 27 32 37

Su p ply Vol tage (Volts) X

Capa ci tance vs. Suppl y Voltage

50

40

30

20

10

Cds and Cgs (pF) x

C

gs

VGS = 0 V f = 1 M Hz

C

ds

C

0

0 10203040

rss

Supply Voltage (Volts) x

6 5 4 3 2

Crss (pF) x

1 0

Bias Voltage vs. Temperature

1.03

1.02

1.01

1.00

0.99

0.98

0.97

Bias Voltage (V) x

0.96

0.95

-20 30 80 130

0.075 0.33

0.585 0.84

1.095 1.35

Voltage normalized to 1.0 V S eries sh ow curre nt (A)

Temp. (°C)

3