Ericsson PTF10193 Datasheet
PTF 10193
T
12 Watts, 860-960 MHz
GOLDMOS Field Effect Transistor
Description
The PTF 10193 is an internally matched, 12–watt GOLDMOS FET
intended for GSM, CDMA and TDMA amplifier applications from 860
to 960 MHz. This device operates at 60% efficiency with 18 dB typical
gain. Nitride surface passivation and full gold metallization ensure
excellent device lifetime and reliability.
ypical Output P ow er & Efficiency vs.
Input Power
20
Efficiency
16
12
8
4
Output Power (Watts)
0
0.0 0.2 0.4 0.6
Output P ower
Input Power (Watts)
VDD = 26 V
I
= 160 mA
DQ
f = 960 MHz
70
60
50
40
30
20
Efficiency (%) x
• INTERNALLY MATCHED
• Performance at 960 MHz, 26 Volts
- Output Power = 12 Watts
- Efficiency = 60% Typ
- Power Gain = 18 dB Typ
• Full Gold Metallization
• Silicon Nitride Passivated
• Surface Mountable
• Available in Tape and Reel
• 100% Lot Traceability
10193
1234560008A
10193
A-1234560008
Package 20259
RF Specifications (100% Tested)
Characteristic Symbol Min Typ Max Units
Common Source Power Gain
(V
Power Output at 1 dB Compressed
(V
Drain Efficiency
(V
Load Mismatch Tolerance
(V
—all phase angles at frequency of test)
All published data at T
= 26 V, P
DD
= 26 V, IDQ = 160 mA, f = 960 MHz) P-1dB 12 14 — Watts
DD
= 26 V, P
DD
= 26 V, P
DD
= 12 W, IDQ = 160 mA, f = 960 MHz) G
OUT
= 12 W, IDQ = 160 mA, f = 960 MHz) h 55 60 — %
OUT
= 12 W, IDQ = 160 mA, f = 921 MHz Y — — 10:1 —
OUT
= 25°C unless otherwise indicated.
CASE
ps
17.0 18 — dB
e
1
PTF 10193
G
e
Electrical Characteristics (100% Tested)
Characteristic Conditions Symbol Min Typ Max Units
Drain-Source Breakdown Voltage VGS = 0 V, ID = 25 mA V
(BR)DSS
Drain-Source Leakage Current VDS = 28 V, VGS = 0 V I
Gate Threshold Voltage VDS = 10 V, ID = 75 mA V
Forward Transconductance VDS = 10 V, ID = 0.5 A g
DSS
GS(th)
fs
65 ——Volts
——1mA
3.0 — 5.0 Volts
— 0.9 — Siemens
Maximum Ratings
Parameter Symbol Value Unit
Drain-Source Voltage V
Gate-Source Voltage V
Operating Junction Temperature T
Total Device Dissipation P
DSS
GS
J
D
Above 25°C derate by 0.33 W/°C
Storage Temperature Range T
Thermal Resistance (T
= 70°C) R
CASE
STG
qJC
65 Vdc
±20 Vdc
200 °C
58 Watts
–40 to 150 °C
3.0 °C/W
Typical Performance
Typical P
, Gain & Efficiency
OUT
(at P-1dB)
vs. Frequency
20
18
16
ain (dB)
Gain
14
Outp ut Power (W)
12
10
860 880 900 920 940 960
Frequency (MHz)
Efficiency (%)
VDD = 26 V
= 160 mA
I
DQ
70
58
46
34
22
10
Output Power &
Efficiency
Broadband Test Fixt ure Performance
20
Gain (dB)
16
Gain (dB)
12
8
920 930 940 950 960
VDD = 26 V
I
DQ
P
Frequency (MHz)
Effi cie n cy ( %)
= 160 mA
= 10 W
OUT
Return Loss (dB)
60
50
40
Efficiency
- 5
30
-10
20
-15
10
-20
Return Loss
0
2
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