Ericsson PTF10161 Datasheet

PTF 10161

E

165 Watts, 869–894 MHz

GOLDMOS® Field Effect T ransistor

Description

The PTF 10161 is an internally matched,165 watt GOLDMOS FET intended for large signal amplifier applications from 869 to 894 MHz. It typically operates with 50% efficiency and 16 db of gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.

Typical Output Pow er & Efficiency vs. Input Pow er

180

Efficiency

140

100

VDD = 28.0 V

= 1.5 A Total

I

60

Output Power (Watts)

20

012345678

Output Power

Input Power (Watts)

DQ

f = 880 MHz

60

45

30

fficiency (%)

15

0

• INTERNALLY MA TCHED

• Performance at 894 MHz, 28 Volts

- Output Power = 165 Watts

- Power Gain = 16.0 dB Typ

- Drain Efficiency = 50% Typ

• Full Gold Metallization

• Silicon Nitride Passivated

• Back Side Common Source

• 100% Lot Traceability

10161

1234560055

Package 20250

RF Specifications (100% T ested)

Characteristic Symbol Min Typ Max Units

Gain

(V

Power Output at 1 dB Compression

(V

Drain Efficiency

(V

Load Mismatch Tolerance

(V f = 893.9, 894 MHz—all phase angles at frequency of test)

All published data at T

= 28 V , P

DD

= 28 V , ICQ = 1.5 A Total, f = 880 MHz) P-1dB 165 180 — Watts

DD

= 28 V , P

DD

= 28 V , P

DD

= 165 W, IDQ = 1.5 A Total, f = 894 MHz) G

OUT

= 165 W, IDQ = 1.5 A Total, f = 894 MHz) h 45 50 — %

OUT

= 165 W, IDQ = 1.5 A Total, Y — — 10:1 —

OUT

= 25°C unless otherwise indicated.

CASE

ps

15.0 16.0 — dB

e

1

PTF 10161

e

Electrical Characteristics (per side) (100% T ested)

Characteristic Conditions Symbol Min T yp Max Units

Drain-Source Breakdown Voltage VGS = 0 V , ID = 5 mA V

(BR)DSS

Drain-Source Leakage Current VDS = 28 V , VGS = 0 V I Gate Threshold Voltage VDS = 10 V , ID = 75 mA V Forward Transconductance VDS = 10 V , ID = 3 A g

DSS

GS(th)

fs

65 — — Volts — — 1.0 mA

3.0 4.3 5.0 Volts — 2.5 — Siemens

Maximum Ratings

Parameter Symbol Value Unit

Drain-Source Voltage Gate-Source Voltage Operating Junction T emperature T T otal Device Dissipation at P

Above 25°C derate by 2.85 W/°C Storage T emperature Range T

Thermal Resistance (T

(1)

per side

(1)

= 70°C) R

CASE

V

DSS

GS

J

D

STG

qJC

65 Vdc ±20 Vdc 200 °C 500 Watts

–40 to +150 °C

0.35 °C/W

Typical Performance

Typical P

(at P-1dB) , Gain & Efficiency

OUT

vs. Frequency

18

Outp ut Power (W)

16

Gain (dB)

14

Gain

12

Efficiency (%)

10

865 870 875 880 885 890 895

Frequency (MHz)

VDD = 28 V

= 1.5 A Total

I

DQ

225

175

125

75

25

Output Power & Efficiency

Broadband Test Fixture Performance

16

Gain

14

12

Gain (dB)

10

8

865 870 875 880 885 890 895

VDD = 28 V

= 1.5 A Total

I

DQ

= 165 W

P

OUT

Frequency (MHz)

Efficiency (%)

Return

Loss (dB)

60

50

40

30

- 5

20

-10

-15

10

-20

-25

0

Efficiency

Return Loss

2

e

Typical Performance (cont.)

PTF 10161

Output Power vs. Supply Voltage

200 180 160 140 120 100

80 60

Output Power (Watts)

40

18 20 22 24 26 28 30

Supply Voltage (Volts)

Capacitance vs. Supply Volt age

600

500

400

300

200

Cds & Cgs (pF) .

100

C

gs

C

ds

0

0 10203040

Supply Voltage (Volts)

IDQ = 1.5 A Total f = 894 MHz

(per side)

VGS = 0 V f = 1 MHz

C

rss

95 85 75 65 55 45 35 25 15 5

*

Crss (pF)

Inter modulation Distortion vs. Output Power

-10

VDD = 28 V

-20

-30

-40

IMD (dBc)

-50

-60

= 1.5 A Total

I

CQ

= 880.0 MHz

f

1

= 880.1 MHz

f

2

30 50 70 90 110 130 150 170

3rd order

Output Power (Watts-PEP)

Gate-Source Volt age vs. Case Temperature

1.03

1.02

1.01

1.00

0.99

0.98

0.97

Bias Voltage (V)

0.96

0.95

-20 5 30 55 80 105

Case Temperature (°C)

Voltage normaliz ed t o 1.0 V Series show current (A )

1.72 5

8.32

11.6

14.84

18.12

*This part is internally matched. Measurements of the finished product will not yield these figures.

3