Ericsson PTF10154 Datasheet
PTF 10154
85 Watts, 1.93–1.99 GHz
GOLDMOS® Field Effect Transistor
Description
The PTF 10154 is an internally matched 85–watt GOLDMOS FET
intended for CDMA and TDMA applications from 1.93 to 1.99 GHz.
This device operates at 43% efficiency with 1 1 dB gain. Nitride surface
passivation and full gold metallization ensure excellent device lifetime and reliability.
Typical Powe r Output and Efficiency
vs. Input Power
100
50
• INTERNALLY MATCHED
• Guaranteed Performance at 1.93, 1.99 GHz,
28 V
- Output Power = 85 Watts Min
- Power Gain = 11 dB Typ
• Full Gold Metallization
• Silicon Nitride Passivated
• Back Side Common Source
• Excellent Thermal Stability
• 100% Lot Traceability
80
60
40
20
Power Output (Watts)
0
Pow er Output
03691215
Input Power (Watts)
VDD = 28 V
I
DQ
f = 1990 MHz
Efficiency
= 1.15 A
40
30
20
10
0
10154
A-1234560035
Efficiency (%) x
Package 20248
RF Specifications (100% Tested)
Characteristic Symbol Min Typ Max Units
Gain
(V
Power Output at 1 dB Compression
(V
Drain Efficiency
(V
Load Mismatch Tolerance
(V
—all phase angles at frequency of test)
All published data at T
= 28 V, P
DD
= 28 V, IDQ = 1.15 A, f = 1.99 GHz) P-1dB 85 — — Watts
DD
= 28 V, P
DD
= 28 V, P
DD
= 10 W, IDQ = 1.15 A, f = 1.96, 1.99 GHz) G
OUT
= 90 W, IDQ = 1.15 A, f = 1.99 GHz) h
OUT
= 90 W, IDQ = 1.15 A, f = 1.99 GHz Y — — 10:1 —
OUT
= 25°C unless otherwise indicated.
CASE
ps
D
10.0 11 — dB
—43 — %
e
1
PTF 10154
-
e
Electrical Characteristics (100% Tested)
Characteristic Conditions Symbol Min Typ Max Units
Drain-Source Breakdown Voltage VGS = 0 V, ID = 100 mA V
Zero Gate Voltage Drain Current VDS = 28 V, VGS = 0 V I
Gate Threshold Voltage VDS = 10 V, ID = 150 mA V
Forward Transconductance VDS = 10 V, ID = 2 A g
(BR)DSS
DSS
GS(th)
fs
65 ——Volts
——5.0 mA
3.0 — 5.0 Volts
— 1.0 — Siemens
Maximum Ratings
Parameter Symbol Value Unit
Drain-Source Voltage V
Gate-Source Voltage V
Operating Junction Temperature T
Total Device Dissipation at P
Above 25°C derate by 2.08 W/°C
Storage Temperature Range T
Thermal Resistance (T
= 70°C) R
CASE
DSS
GS
J
D
STG
qJC
65 Vdc
±20 Vdc
200 °C
365 Watts
–40 to +150 °C
0.48 °C/W
Typical Performance
Narrow band Test Fixture Pe rformance
12
Gain
9
VDD = 28 V, IDQ = 1. 15 A
6
P
= 85 W
Gain (dB)
3
0
1900 1920 1940 1960 1980 2000
OUT
F requency (MHz)
Eff iciency
R eturn Loss
-
5
10
60
50
40
30
20
10
0
Efficiency
Return Loss
Power Gain vs. Output Power
12
11
10
9
Power Gain (dB)
8
110100
IDQ = 1.2
IDQ = 0.6
IDQ = 0.3
VDD = 28 V
f = 1990 MHz
Output Power (Watts)
2
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