Ericsson PTF10137 Datasheet
PTF 10137
12 Watts, 1.0 GHz
GOLDMOS
™
Field Effect T ransistor
Description
The PTF 10137 is a 12 Watt LDMOS FET intended for large signal
amplifier applications to 1.0 GHz. It operates at 60% efficiency with
18 dB of gain. Nitride surface passivation and full gold metallization
ensure excellent device lifetime and reliability.
Typical Output Pow er & Efficiency vs. Input Power
20
Efficiency (%)
15
VDD = 28 V
10
5
Output Power (Watts)
0
0.0 0.2 0.4 0.6
Outp ut P ower (W)
Input Power (Wa tts)
= 160 mA
I
DQ
f = 960 MHz
80
60
40
20
0
Efficiency
• Performance at 960 MHz, 28 Volts
- Output Power = 12 Watts
- Efficiency = 60% Typ
- Power Gain = 18 dB Typ
• Full Gold Metallization
• Silicon Nitride Passivated
• Surface Mountable
• Available in T ape and Reel
• 100% Lot Traceability
10137
A-1234569942
Package 20244
RF Specifications (100% T ested)
Characteristic Symbol Min T yp Max Units
Common Source Power Gain
(V
Power Output at 1 dB Compressed
(V
Drain Efficiency
(V
Load Mismatch Tolerance
(V
—all phase angles at frequency of test)
All published data at T
= 28 V , P
DD
= 28 V , IDQ = 160 mA, f = 960 MHz) P-1dB 12 15 — W atts
DD
= 28 V , P
DD
= 28 V , P
DD
= 12 W, IDQ = 160 mA, f = 960 MHz) G
OUT
= 12 W, IDQ = 160 mA, f = 960 MHz) h 55 60 — %
OUT
= 12 W, IDQ = 160 mA, f = 960 MHz Y — — 10:1 —
OUT
= 25°C unless otherwise indicated.
CASE
ps
16.5 18 — dB
e
1
PTF 10137
y
Gain (dB)
y
s
e
Electrical Characteristics (100% T ested)
Characteristic Conditions Symbol Min T yp Max Units
Drain-Source Breakdown Voltage VGS = 0 V , ID = 25 mA V
(BR)DSS
Drain-Source Leakage Current VDS = 28 V , VGS = 0 V I
Gate Threshold Voltage VDS = 10 V , ID = 75 mA V
Forward Transconductance VDS = 10 V , ID = 0.5 A g
DSS
GS(th)
fs
65 — — Volts
——1mA
3.0 — 5.0 Volts
— 0.9 — Siemens
Maximum Ratings
Parameter Symbol Value Unit
Drain-Source Voltage V
Gate-Source Voltage V
Operating Junction T emperature T
T otal Device Dissipation P
DSS
GS
J
D
Above 25°C derate by 0.33 W/°C
Storage T emperature Range T
Thermal Resistance (T
= 70°C) R
CASE
STG
qJC
65 Vdc
±20 Vdc
200 °C
58 Watts
–40 to 150 °C
3.0 °C/W
Typical Performance
Typical P
, Gain & Efficiency
OUT
(at P-1dB)
vs. Frequency
18
17
16
15
Gain
VDD = 28 V
14
= 160 mA
I
13
12
11
DQ
840 880 920 960 1000
Frequency (MHz)
Efficiency (%)
Outp ut P ower (W)
80
70
60
50
40
30
20
10
Output Power & Efficienc
Broadband Test Fixture Performance
20
Gain (dB)
16
Efficiency (%)
12
Gain
8
4
960 970 980 990 1000
VDD = 28 V
= 160 mA
I
DQ
= 12 W
P
OUT
Frequency (MHz)
Return L oss (d B )
80
70
60
-10
50
-20
40
Efficienc
Return Los
2
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