Ericsson PTF10134 Datasheet

PTF 10134 100 Watts, 2.1–2.2 GHz

GOLDMOS® Field Effect Transistor

Description

The PTF 10134 is an internally matched GOLDMOS FET intended for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 100 watts power output and operates with 10 dB typical gain. Nitride surface passivation and gold metallization ensure excellent device lifetime and reliability.

Typical Output Power & Efficiency vs. Input Power

120

Output Power

100

48

40

• INTERNALLY MATCHED

• Guaranteed Performance at 2.17 GHz, 28 V

- Output Power = 100 Watts Min

- Power Gain = 10 dB Typ

• Full Gold Metallization

• Excellent Thermal Stability

• 100% Lot Traceability

80

60

40

20

Output Power (Watts)

0

02468101214

Input Po wer (Watts )

VDD = 28 V I

DQ

f = 2170 M H z

Efficiency

= 1.3 A Total

32

24

16

Efficiency (%) X

8

0

10134

1234569953A

Package 20250

RF Specifications (100% Tested)

Characteristic Symbol Min T yp Max Units

Gain

(V

Power Output at 1.5 dB Compression

(V

Drain Efficiency

(V

Load Mismatch Tolerance

(V —all phase angles at frequency of test)

All published data at T

= 28 V, P

DD

= 28 V, IDQ = 1.3 A Total, f = 2.17 GHz) P-1dB 100 — — Watts

DD

= 28 V, P

DD

= 28 V, P

DD

= 30 W, IDQ = 1.3 A Total, f = 2.17 GHz) G

OUT

= 100 W, IDQ = 1.3 A Total, f = 2.17 GHz) h

OUT

= 80 W, IDQ = 1.3 A Total, f = 2.17 GHz Y — — 10:1 —

OUT

= 25°C unless otherwise indicated.

CASE

ps

D

9.5 10 — dB

—37—%

e

1

PTF 10134

e

Electrical Characteristics (100% Tested—characteristics, conditions and limits shown per side)

Characteristic (per side) Conditions Symbol Min Typ Max Units

Drain-Source Breakdown Voltage VGS = 0 V, ID = 100 mA V

(BR)DSS

Zero Gate Voltage Drain Current VDS = 28 V, VGS = 0 V I Gate Threshold Voltage VDS = 10 V, ID = 150 mA V Forward Transconductance VDS = 10 V, ID = 2 A g

DSS

GS(th)

fs

65 ——Volts ——5.0 mA

3.0 — 5.0 Volts — 4.0 — Siemens

Maximum Ratings

Parameter Symbol Value Unit

Drain-Source Voltage Gate-Source Voltage Operating Junction Temperature T Total Device Dissipation P

Above 25°C derate by 2.51 W/°C Storage Temperature Range T

Thermal Resistance (T

(1)

per side

(1)

CASE

V

= 70°C) R

DSS

GS

J

D

STG

qJC

–40 to +150 °C

65 Vdc ±20 Vdc 200 °C 440 Watts

0.39 °C/W

Typical Performance

Typical P

, Gain & Efficiency

OUT

(at P-1dB)

vs. Frequency

12

11

10

Gain (dB)

Gain

9

8

7

2100 2120 2140 2160 2180 2200

Frequency (MHz)

Out p ut Power (W)

VDD = 28 V

= 1.3 A Total

I

DQ

Efficiency (%)

120

100

80

60

40

20

Output Power & Efficiency

Gain (dB)

Broadband Test Fixture Per formance

11

Gain

9

7

Efficiency

5

Return Loss

3

2100 2120 2140 2160 2180

VDD = 28 V I

= 1.3 A Total

DQ

P

= 25 W

OUT

Frequency (MHz)

60

50

40

30

- 5

20

-15

-25

10

-35

0

Efficiency (%)Return Loss (dB)

2

e

C

PTF 10134

11

IDQ = 1300 mA

10

IDQ = 650 mA

9

IDQ = 325 mA

8

Power Gain (dB)

7

0.1 1.0 10.0 100.0

VDD = 28 V f = 2170 MHz

Output Power (Watts)

Intermodul ation Distortion vs. Output Powe r

(as measured i n a bro adban d circu it)

-15

Power Gain vs. Out put Power

VDD = 28 V, IDQ = 1.3 A Total

-25

f

= 2169 MHz, f2 = 2170 MHz

1

-35

-45

IMD (dBc)

-55

-65 0 20 40 60 80 100 120

Outp ut Po wer (Watts-PEP)

3rd Order

5th

7th

Output Power vs. Supply Voltage

65

60

55

50

IDQ = 1.3 A Total f = 2170 MHz

45

Output Power (Watts)

40

24 26 28 30 32 34 36

Supply Voltage (Volts)

Capa cita nce vs. Supply Vol ta ge *

450 400 350 300 250 200 150 100

Cds and Cgs (pF)

50

0

010203040

Supply Voltage (Volts)

gs

C

rss

VGS = 0 V f = 1 MHz

ds

30 25 20 15 10 5 0

Crss

* This part is internally matched. Measurements of the finished product will not yield these results.

Bias Voltage vs. T emperatur e

1.03

1.02

1.01

1.00

0.99

0.98

Bias Voltage (V)

0.97

0.96

0.95

-20 30 80 130

Voltage normalized to 1.0 V Series show current (A)

0.800

2.767

4.733

6.700

8.667

Temp. (°C)

3