Ericsson PTF10120 Datasheet
PTF 10120
)
)
120 Watts, 1.8–2.0 GHz
GOLDMOS
™
Field Effect Transistor
Description
The PTF 10120 is an internally matched common source N-channel
enhancement-mode lateral MOSFET intended for CDMA and TDMA
applications from 1.8 to 2.0 GHz. It is rated at 120 watts power output.
Nitride surface passivation and full gold metallization ensure excellent
device lifetime and reliability.
Typical Output Pow er vs. Input Pow er
150
120
90
60
30
Output Power (Watts
0
Output P ower
VDD = 28 V
I
= 1.2 A Total
DQ
f = 1990 MHz
0 3 6 9 12 15 18
Input Power (Watts)
Efficiency
100
80
60
40
Efficiency (%
20
0
INTERNALLY MATCHED
•
• Guaranteed Performance at 1.99 GHz, 28 V
- Output Power = 120 Watts Min
- Power Gain = 11 dB Typ
• Full Gold Metallization
• Silicon Nitride Passivated
• Back Side Common Source
• Excellent Thermal Stability
• 100% Lot Traceability
10120
A-1234569849
Package 20250
RF Specifications (100% Tested)
Characteristic Symbol Min Typ Max Units
Gain
(V
Power Output at 1 dB Compression
(V
Drain Efficiency
(V
Load Mismatch Tolerance
(V
—all phase angles at frequency of test)
All published data at T
= 28 V, P
DD
= 28 V, IDQ = 1.2 A Total, f = 1.99 GHz) P-1dB 120 — — Watts
DD
= 28 V, P
DD
= 28 V, P
DD
= 30 W, IDQ = 1.2 A Total, f = 1.99 GHz) G
OUT
= 120 W, IDQ = 1.2 A Total, f = 1.99 GHz) h
OUT
= 60 W, IDQ = 1.2 A Total, f = 1.99 GHz Y — — 10:1 —
OUT
= 25°C unless otherwise indicated.
CASE
ps
D
10 11 — dB
—40 — %
e
1
PTF 10120
y
y
y
s
e
Electrical Characteristics (100% Tested—characteristics, conditions and limits shown per side)
Characteristic (per side) Conditions Symbol Min Typ Max Units
Drain-Source Breakdown Voltage VGS = 0 V , ID = 100 mA V
(BR)DSS
Zero Gate Voltage Drain Current VDS = 28 V , VGS = 0 V I
Gate Threshold Voltage VDS = 10 V , ID = 150 mA V
Forward Transconductance VDS = 10 V , ID = 2 A g
DSS
GS(th)
fs
65 — — Volts
— — 5.0 mA
3.0 — 5.0 Volts
— 4.0 — Siemens
Maximum Ratings
Parameter Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage
Operating Junction Temperature T
Total Device Dissipation at P
Above 25°C derate by 2.51 W/°C
Storage Temperature Range T
Thermal Resistance (T
(1)
per side
(1)
(1)
= 70°C) R
CASE
V
DSS
V
STG
GS
J
D
qJC
65 Vdc
±20 Vdc
200 °C
440 Watts
–40 to +150 °C
0.39 °C/W
Typical Performance
Typical P
12
11
10
Gain (dB)
9
Gain (dB)
8
7
1750 1850 1950 2050
, Gain & Efficiency
OUT
vs. Frequenc
Outp ut P ower (W)
VDD = 28 V
= 1.2 A Tota l
I
DQ
Frequency (MHz)
(at P-1dB)
Efficiency (%)
160
140
120
100
80
60
40
Output Power & Efficienc
20
12
11
10
Gain (dB)
9
8
Broadband Test Fixture Performance
Efficiency (%)
@P-1dB
Gain (dB)
Return Loss (dB)
1930 1940 1950 1960 1970 1980 1990
Frequency (MHz)
VDD = 28 V
= 1.2 A Tota l
I
DQ
= 120 W
P
OUT
60
45
30
0
- 5
15
-10
-15
0
-20
Efficienc
Return Los
2
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