Ericsson PTF10112 Datasheet
PTF 10112
60 W atts, 1.8–2.0 GHz
GOLDMOS
™
Field Effect T ransistor
Description
The PTF 10112 is an internally matched common source N-channel
enhancement-mode lateral MOSFET intended for CDMA and TDMA
applications from 1.8 to 2.0 GHz. It is rated at 60 watts power output.
Nitride surface passivation and full gold metallization ensure excellent
device lifetime and reliability.
Typical Output Pow er vs. Input Power
80
60
40
VCC = 28 V
20
Output Power (Watts)
0
0123456
Input Power (Watts)
= 580 mA
I
DQ
f = 2000 MHz
INTERNALLY MA TCHED
•
• Guaranteed Performance at 1.93, 1.99 GHz,
28 V
- Output Power = 60 Watts Min
- Power Gain = 12 dB T yp
• Full Gold Metallization
• Silicon Nitride Passivated
• Back Side Common Source
• Excellent Thermal Stability
• 100% Lot Traceability
10112
A-1234569837
Package 20248
RF Specifications (100% T ested)
Characteristic Symbol Min T yp Max Units
Gain
(V
Power Output at 1 dB Compression
(V
Drain Efficiency
(V
Load Mismatch Tolerance
(V
—all phase angles at frequency of test)
All published data at T
= 28 V , P
DD
= 28 V , IDQ = 580 mA, f = 1.99 GHz) P-1dB 60 — — Watts
DD
= 28 V , P
DD
= 28 V , P
DD
= 15 W, IDQ = 580 mA, f = 1.93, 1.99 GHz) G
OUT
= 60 W, IDQ = 580 mA, f = 1.99 GHz) h
OUT
= 60 W, IDQ = 580 mA, f = 1.99 GHz Y — — 10:1 —
OUT
= 25°C unless otherwise indicated.
CASE
ps
D
11 12 — dB
—41 — %
e
1
PTF 10112
y
)
)
e
Electrical Characteristics (100% T ested)
Characteristic Conditions Symbol Min T yp Max Units
Drain-Source Breakdown Voltage VGS = 0 V , ID = 100 mA V
(BR)DSS
Zero Gate Voltage Drain Current VDS = 28 V , VGS = 0 V I
Gate Threshold Voltage VDS = 10 V , ID = 150 mA V
Forward Transconductance VDS = 10 V , ID = 2 A g
DSS
GS(th)
fs
65 — — V olts
— — 5.0 mA
3.0 — 5.0 Volts
— 4.0 — Siemens
Maximum Ratings
Parameter Symbol Value Unit
Drain-Source Voltage V
Gate-Source Voltage V
Operating Junction T emperature T
T otal Device Dissipation at P
DSS
GS
J
D
Above 25°C derate by 1.35 W/°C
Storage T emperature Range T
Thermal Resistance (T
= 70°C) R
CASE
STG
qJC
65 Vdc
±20 Vdc
200 °C
237 Watts
–40 to +150 °C
0.74 °C/W
Typical Performance
Typical P
14
13
Gain (dB)
12
11
Gain (dB)
10
9
1750 1850 1950 2050
, Gain & Efficiency
OUT
vs. Frequency
VCC = 28 V
= 580 mA
I
DQ
Outp ut P ower (W)
Frequency (MHz)
(at P-1dB)
Efficiency (%)
Broadband Test Fixture Performance
80
70
60
50
40
Output Power & Efficienc
30
13
12
11
Gain (dB)
10
9
1930 1940 1950 1960 1970 1980 1990
Gain (dB)
VDD = 28 V
= 580mA
I
DQ
= 20 W
P
OUT
Return Loss (dB)
Frequency (MHz)
Efficiency (%)
@P-1dB
60
50
40
Efficiency (%
0
30
-10
20
-20
10
-30
0
Return Loss (dB
2
Loading...