Ericsson PTF10111 Datasheet

PTF 10111 6 W atts, 1.5 GHz
GOLDMOS
Field Effect T ransistor
Description
The PTF 10111 is a 6 watt LDMOS FET intended for large signal amplifier applications to 1.5 GHz. It operates @ 50% efficiency and 16 dB of gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.
Typical Output Power vs. Input Pow er
8 7 6 5 4 3 2 1
Output Power (Watts)
0
0.00.10.20.30.40.5
Input Power (Watts)
VDD = 28V I
= 75 mA
DQ
f = 1.5 G Hz
• Performance at 1.5 GHz, 28 Volts
- Output Power = 6 Watts
- Efficiency = 50% Typ
- Power Gain = 16 dB Typ
• Full Gold Metallization
• Silicon Nitride Passivated
• 100% Lot Traceability
10111
Package 20222
Maximum Ratings
Parameter Symbol Value Unit
Drain-Source Voltage V Gate-Source Voltage V Operating Junction T emperature T T otal Device Dissipation at T
Above 25°C derate by 0.20 8 W/°C Storage T emperature Range T
Thermal Resistance (T
flange
= 25°C P
flange
= 70°C) R
DSS
GS
J
D
STG
qJC
65 Vdc ±20 Vdc 200 °C
36 Watts
–40 to +150 °C
4.8 °C/W
e
1
PTF 10111
)
y
)
)
)
e
Electrical Characteristics (100% T ested)
Characteristic Conditions Symbol Min T yp Max Units
Drain-Source Breakdown Voltage VGS = 0 V , ID = 40 mA V Drain-Source Leakage Current VDS = 28 V , VGS = 0 V I Gate Threshold Voltage VDS = 10 V , ID = 75 mA V Forward Transconductance VDS = 10 V , ID = 0.5 A g
(BR)DSS
DSS
GS(th)
fs
65 68 Volts ——1mA
3.0 5.0 Volts — 0.2 Siemens
RF Specifications (100% T ested)
Characteristic Symbol Min T yp Max Units
Common Source Power Gain
(V
Power Output at 1 dB Compressed
(V
Drain Efficiency
(V
Load Mismatch Tolerance
(V all phase angles at frequency of test)
= 28 V , P
DD
= 28 V , IDQ = 75 mA, f = 1.5 GHz) P-1dB 6 7 Watts
DD
= 28 V , P
DD
= 28 V , P
DD
= 6 W, IDQ = 75 mA, f = 1.5 GHz) G
OUT
= 6 W, IDQ = 75 mA, f = 1.5 GHz) h
OUT
= 6 W, IDQ = 75 mA, f = 1.5 GHz— Y 30:1
OUT
ps
D
15.0 16 dB
45 50 %
Typical Performance
Typical P
14
Gain
11
VDD = 28 V
Gain (dB
8
I
5
1300 1400 1500 1600 1700
, Gain & Efficiency
OUT
vs. Frequency
= 75 mA
DQ
Frequ ency ( MHz)
(at P-1dB )
Efficiency (%)
Output Power (W)
90 80 70 60 50 40 30 20 10 0
Output Power & Efficienc
Broadba n d Test Fixture Performance
16
Efficiency (%)
15
Gain (dB)
VDD = 28 V
14
Gain (dB
13
12
1450 1475 1500 1525 1550
I
= 75 mA
DQ
P
= 6 W
OUT
Return Loss (dB)
F requency (MHz)
60 50 40
Efficiency (%
30
- 5 20
-15 10
-25 0
Return Loss (dB
-35
2
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