PTF 10111
6 W atts, 1.5 GHz
GOLDMOS
™
Field Effect T ransistor
Description
The PTF 10111 is a 6 watt LDMOS FET intended for large signal amplifier
applications to 1.5 GHz. It operates @ 50% efficiency and 16 dB of
gain. Nitride surface passivation and full gold metallization ensure
excellent device lifetime and reliability.
Typical Output Power vs. Input Pow er
8
7
6
5
4
3
2
1
Output Power (Watts)
0
0.00.10.20.30.40.5
Input Power (Watts)
VDD = 28V
I
= 75 mA
DQ
f = 1.5 G Hz
• Performance at 1.5 GHz, 28 Volts
- Output Power = 6 Watts
- Efficiency = 50% Typ
- Power Gain = 16 dB Typ
• Full Gold Metallization
• Silicon Nitride Passivated
• 100% Lot Traceability
10111
A-1234569820
Package 20222
Maximum Ratings
Parameter Symbol Value Unit
Drain-Source Voltage V
Gate-Source Voltage V
Operating Junction T emperature T
T otal Device Dissipation at T
Above 25°C derate by 0.20 8 W/°C
Storage T emperature Range T
Thermal Resistance (T
flange
= 25°C P
flange
= 70°C) R
DSS
GS
J
D
STG
qJC
65 Vdc
±20 Vdc
200 °C
36 Watts
–40 to +150 °C
4.8 °C/W
e
1
PTF 10111
e
Electrical Characteristics (100% T ested)
Characteristic Conditions Symbol Min T yp Max Units
Drain-Source Breakdown Voltage VGS = 0 V , ID = 40 mA V
Drain-Source Leakage Current VDS = 28 V , VGS = 0 V I
Gate Threshold Voltage VDS = 10 V , ID = 75 mA V
Forward Transconductance VDS = 10 V , ID = 0.5 A g
(BR)DSS
DSS
GS(th)
fs
65 68 — Volts
——1mA
3.0 — 5.0 Volts
— 0.2 — Siemens
RF Specifications (100% T ested)
Characteristic Symbol Min T yp Max Units
Common Source Power Gain
(V
Power Output at 1 dB Compressed
(V
Drain Efficiency
(V
Load Mismatch Tolerance
(V
all phase angles at frequency of test)
= 28 V , P
DD
= 28 V , IDQ = 75 mA, f = 1.5 GHz) P-1dB 6 7 — Watts
DD
= 28 V , P
DD
= 28 V , P
DD
= 6 W, IDQ = 75 mA, f = 1.5 GHz) G
OUT
= 6 W, IDQ = 75 mA, f = 1.5 GHz) h
OUT
= 6 W, IDQ = 75 mA, f = 1.5 GHz— Y — — 30:1 —
OUT
ps
D
15.0 16 — dB
45 50 — %
Typical Performance
Typical P
14
Gain
11
VDD = 28 V
Gain (dB
8
I
5
1300 1400 1500 1600 1700
, Gain & Efficiency
OUT
vs. Frequency
= 75 mA
DQ
Frequ ency ( MHz)
(at P-1dB )
Efficiency (%)
Output Power (W)
90
80
70
60
50
40
30
20
10
0
Output Power & Efficienc
Broadba n d Test Fixture Performance
16
Efficiency (%)
15
Gain (dB)
VDD = 28 V
14
Gain (dB
13
12
1450 1475 1500 1525 1550
I
= 75 mA
DQ
P
= 6 W
OUT
Return Loss (dB)
F requency (MHz)
60
50
40
Efficiency (%
30
- 5
20
-15
10
-25
0
Return Loss (dB
-35
2