Ericsson PTF10053 Datasheet
PTF 10053
12 Watts, 2.0 GHz
GOLDMOS® Field Effect Transistor
Description
The PTF 10053 is a 12–watt GOLDMOS FET intended for large
signal applications from 1.0 to 2.0 GHz. It operates at 40% efficiency
with 12 dB typical gain. Nitride surface passivation and full gold
metallization ensure excellent device lifetime and reliability.
Typical Output Pow er & Efficiency vs. Input Power
16
14
12
10
8
6
4
2
Output Power (Watts)
0
0.0 0.5 1.0 1.5 2.0
Efficiency
Output P ower
VDD = 26 V
= 155 mA
I
DQ
f = 2.0 GHz
Input Power (Watts)
50
45
40
35
30
25
20
15
10
Efficiency (%) X
• Guaranteed Performance at 1.99 GHz, 26 V
- Output Power = 12 Watts Min
- Power Gain = 12 dB Typ
• Full Gold Metallization
• Silicon Nitride Passivated
• Back Side Common Source
• Excellent Thermal Stability
• 100% Lot Traceability
10053
A-1234569911
Package 20244
RF Specifications (100% T ested)
Characteristic Symbol Min Typ Max Units
Gain
(V
Power Output at 1 dB Compression
(V
Drain Efficiency
(V
Load Mismatch Tolerance
(V
—all phase angles at frequency of test)
All published data at T
= 26 V , P
DD
= 26 V , IDQ = 155 mA, f = 1.99 GHz) P-1dB 12 — — Watts
DD
= 26 V , P
DD
= 26 V , P
DD
= 3 W, IDQ = 155 mA, f = 1.93, 1.99 GHz) G
OUT
= 12 W, IDQ = 155 mA, f = 1.99 GHz) h
OUT
= 12 W, IDQ = 155 mA, f = 1.99 GHz Y — — 10:1 —
OUT
= 25°C unless otherwise indicated.
CASE
ps
D
10 12 — dB
40 — — %
e
1
PTF 10053
e
Electrical Characteristics (100% T ested)
Characteristic Conditions Symbol Min T yp Max Units
Drain-Source Breakdown Voltage VGS = 0 V , ID = 50 mA V
(BR)DSS
Zero Gate Voltage Drain Current VDS = 26 V , VGS = 0 V I
Gate Threshold Voltage VDS = 10 V , ID = 75 mA V
Forward Transconductance VDS = 10 V , ID = 2 A g
DSS
GS(th)
fs
65 ——Volts
——1.0 mA
3.0 — 5.0 Volts
— 0.8 — Siemens
Maximum Ratings
Parameter Symbol Value Unit
Drain-Source Voltage V
Gate-Source Voltage V
Operating Junction T emperature T
T otal Device Dissipation P
DSS
GS
J
D
Above 25°C derate by 0.33 W/°C
Storage T emperature Range T
Thermal Resistance (T
= 70°C) R
CASE
STG
qJC
65 Vdc
±20 Vdc
200 °C
58 Watts
–40 to +150 °C
3.0 °C/W
Typical Performance
P
, Gain & Efficiency
OUT
16
Outp ut Power (W)
15
14
13
12
11
10
Gain (dB)
9
Gain (dB) and Output Power (W)
1750 1800 1850 1900 1950 2000 2050
(at P-1dB)
Efficiency (%)
VDD = 26 V
I
= 155 mA
DQ
vs. Frequency
Frequency (MHz)
55
50
45
40
35
30
25
20
Broadband Test Fixtur e Performance
14
12
Gain (dB)
10
8
Gain (dB)
Efficiency (%) X
6
4
2
1925 1950 1975 2000
VDD = 26 V
= 155 mA
I
DQ
Pout = 10 W
Return Loss
Efficiency (%)
Frequency (MHz)
60
50
40
Efficiency (%)
30
0
20
-10
-20
10
-30
0
Return Loss (dB) X
2
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