Ericsson PTF10048 Datasheet
PTF 10048
30 Watts, 2.1–2.2 GHz, W-CDMA
GOLDMOS® Field Effect Transistor
Description
The PTF 10048 is an internally matched 30–watt GOLDMOS FET
intended for WCDMA applications from 2.1 to 2.2 GHz. It operates at
40% efficiency with 10.5 dB typical gain. Nitride surface passivation
and full gold metallization ensure excellent device lifetime and
reliability.
Typical Output Pow er & Efficiency vs. Input Power
40
Efficiency
45
INTERNALLY MATCHED
Guaranteed Performance at 2.17 GHz, 28 V
- Output Power = 30 Watts Min
- Gain = 10.5 dB Typ at 30 Watts
Full Gold Metallization
Silicon Nitride Passivated
Excellent Thermal Stability
100% Lot Traceability
30
20
10
Outp u t P ow er
Output Power (Watts)
0
01234
Input Power (Watts)
VDD = 28 V
= 425 mA
I
DQ
f = 21 70 MHz
35
25
15
5
10048
A-1234569940
Efficiency (%) X
Package 20237
RF Specifications (100% Tested)
Characteristic Symbol Min Typ Max Units
Gain
(V
Power Output at 1 dB Compression
(V
Drain Efficiency
(V
Load Mismatch Tolerance
(V
—all phase angles at frequency of test)
All published data at T
= 28 V, P
DD
= 28 V, IDQ = 425 mA, f = 2.17 GHz) P-1dB 30 36 — Watts
DD
= 28 V, P
DD
= 28 V, P
DD
= 10 W, IDQ = 425 mA, f = 2.11 & 2.17 GHz) G
OUT
= 30 W, IDQ = 425 mA, f = 2.17 GHz) h 30 40 — %
OUT
= 30 W, IDQ = 425 mA, f = 2.17 GHz Y — — 10:1 —
OUT
= 25°C unless otherwise indicated.
CASE
ps
10 11 — dB
e
1
PTF 10048
e
Electrical Characteristics (100% Tested)
Characteristic Conditions Symbol Min Typ Max Units
Drain-Source Breakdown Voltage VGS = 0 V, ID = 50 mA V
Zero Gate Voltage Drain Current VDS = 28 V, VGS = 0 V I
Gate Threshold Voltage VDS = 10 V, ID = 75 mA V
Forward Transconductance VDS = 10 V, ID = 6 A g
(BR)DSS
DSS
GS(th)
fs
65 65 — Volts
——1.0 mA
3.0 — 5.0 Volts
— 1.8 — Siemens
Maximum Ratings
Parameter Symbol Value Unit
Drain-Source Voltage V
Gate-Source Voltage V
Operating Junction Temperature T
Total Device Dissipation P
Above 25°C derate by 0.66 W/°C
Storage Temperature Range T
Thermal Resistance (T
= 70°C) R
CASE
DSS
GS
J
D
STG
qJC
65 Vdc
±20 Vdc
200 °C
120 Watts
–40 to +150 °C
1.5 °C/W
Typical Performance
Typical P
, Gain & Efficiency
OUT
(at P-1dB )
vs. Fre quency
12
Gain (dB)
11
10
Gain
VDD = 28 V
9
I
= 425 mA
DQ
8
2000 2050 2100 2150 2200 2250 2300
Frequenc y (MHz)
Effici ency (%)
O utp u t Powe r (W)
50
45
40
35
30
25
Output Power & Efficiency
Broadband Test Fixture Pe rformance
14
12
Gain (dB)
10
8
Gain (dB)
6
4
2
2100 2125 2150 2175 2200
VDD = 28 V
I
= 425 mA
DQ
P
= 10 W
OUT
F requency (MHz)
Efficiency (%)
Return Loss
45
35
0
25
- 5
-10
15
-15
-20
-25
5
-30
Efficiency
Return Loss
2
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