Ericsson PTF10036 Datasheet
PTF 10036
85 Watts, 860–960 MHz
GOLDMOS
™
Field Effect Transistor
Description
The PTF 10036 is an internally matched, 85 Watt LDMOS FET
intended for large signal amplifier applications from 860 to 960 MHz.
Nitride surface passivation and full gold metallization ensure
excellent device lifetime and reliability.
Typical Output Pow er vs. Input Power
100
80
60
40
20
Output Power (Watts)
0
0123456
Efficiency (% )
Ou tput Power
VDD = 28 V
I
= 800 mA T ot al
DQ
f = 960 MHz
Inp u t Po wer (Watts)
60
50
40
30
20
10
Efficiency
•
INTERNALLY MATCHED
• Performance at 960 MHz, 28 Volts
- Output Power = 85 Watts
- Power Gain = 12.5 dB Typ
- Efficiency = 55% Typ
• Full Gold Metallization
• Silicon Nitride Passivated
• Back Side Common Source
• 100% Lot Traceability
10036
A-1234569744
Package 20240
RF Specifications (100% T ested)
Characteristic Symbol Min T yp Max Units
Gain
(V
Power Output at 1 dB Compression
(V
Drain Efficiency
(V
Load Mismatch Tolerance
(V
f = 867, 867.1 MHz—all phase angles at frequency of test)
All published data at T
= 28 V , P
DD
= 28 V , IDQ = 800 mA Total, f = 900 MHz) P-1dB 85 90 — Watts
DD
= 28 V , P
DD
= 28 V , P
DD
= 85 W, IDQ = 800 mA Total, f = 900 MHz) G
OUT
= 85 W, IDQ = 800 mA Total, f = 900 MHz) h 50 55 — %
OUT
= 85 W(PEP), IDQ = 800 mA Total, Y — — 3:1 —
OUT
= 25°C unless otherwise indicated.
CASE
ps
11.0 12.5 — dB
e
1
PTF 10036
y
s
y
s
e
Electrical Characteristics (100% Tested—characteristics, conditions and limits shown per side)
Characteristic Conditions Symbol Min Typ Max Units
Drain-Source Breakdown Voltage VGS = 0 V , ID = 5 mA V
Drain-Source Leakage Current VDS = 28 V , VGS = 0 V I
Gate Threshold Voltage VDS = 10 V , ID = 75 mA V
Forward Transconductance VDS = 10 V , ID = 3 A g
(BR)DSS
DSS
GS(th)
fs
65 — — V olts
— — 1.0 mA
3.0 — 5.0 Volts
— 2.8 — Siemens
Maximum Ratings
Parameter Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage
Operating Junction T emperature T
T otal Device Dissipation at P
Above 25°C derate by 1.43 W/°C
Storage T emperature Range T
Thermal Resistance (T
(1)
per side
(1)
(1)
= 70°C) R
CASE
V
DSS
V
STG
GS
J
D
qJC
65 Vdc
±20 Vdc
200 °C
250 Watts
–40 to +150 °C
0.7 °C/W
Typical Performance
Broadband Test Fixture Performa nce
18
15
12
Gain (dB)
9
Gain
6
3
0
860 865 870 875 880 885 890 895 900
VDD = 28 V
I
= 800 mA Total
DQ
P
= 85 W
OUT
Frequency (MHz)
Efficien cy (%)
Return Loss (dB)
60
50
40
- 0
30
20
-10
10
-15
0
-20
Efficienc
Return Los
Broadband Test Fixture Performa nce
16
14
12
Gain (dB)
10
Gain
8
6
4
925 935 945 955
VDD = 28 V
I
= 800 mA Total
DQ
P
= 85 W
OUT
Frequency (MHz)
Efficiency (% )
‘
Return Loss (dB)
60
50
40
- 5
30
-15
20
10
-25
0
-35
Efficienc
Return Los
2
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