Ericsson PTF10031 Datasheet
PTF 10031
50 Watts, 1.0 GHz
GOLDMOS
™
Field Effect T ransistor
Description
The PTF 10031 is a 50 Watt LDMOS FET intended for large signal
amplifier applications to 1.0 GHz. It operates at 55% efficiency and 13.0
dB of gain. Nitride surface passivation and full gold metallization ensure
excellent device lifetime and reliability.
Typical Power Out & Efficiency vs. Power In
70
60
Out put Po wer (W)
50
40
E ffi ci e n cy (%)
90
80
70
60
• Performance at 960 MHz, 28 Volts
- Output Power = 50 Watts
- Power Gain = 13.0 dB Typ
- Efficiency = 55% Typ
• Full Gold Metallization
• Silicon Nitride Passivated
• Excellent Thermal Stability
• Back Side Common Source
• Available in Package 20235 as PTF 10015
• 100% Lot Traceability
Package
10031
A-1234569744
20222
30
Output Power
20
10
0
01234
Input Power (Wa tts)
VDD = 28 V
= 350 mA
I
DQ
f = 960 MH z
50
40
30
20
Efficiency
Package
20235
10015
A-1234561970
Maximum Ratings
Parameter Symbol Value Unit
Drain-Source Voltage V
Gate-Source Voltage V
Operating Junction T emperature T
T otal Device Dissipation T
Above 25°C derate by 1.0 W/°C
Storage T emperature Range T
Thermal Resistance (T
All published data at T
CASE
CASE
= 25°C P
CASE
= 70°C) R
= 25°C unless otherwise indicated.
DSS
GS
J
D
STG
qJC
65 Vdc
±20 Vdc
200 °C
175 Watts
-65 to 150 °C
1.0 °C/W
e
1
PTF 10031
e
Electrical Characteristics (100% T ested)
Characteristic Conditions Symbol Min T yp Max Units
Drain-Source Breakdown Voltage VGS = 0 V , ID = 25 mA V
Drain-Source Leakage Current VDS = 28 V , VGS = 0 V I
Gate Threshold Voltage VDS = 10 V , ID = 75 mA V
Forward Transconductance VDS = 10 V , ID = 3 A g
(BR)DSS
DSS
GS(th)
fs
65 — — Volts
— — 1.0 mA
3.0 — 5.0 Volts
— 2.8 — Siemens
RF Specifications (100% T ested)
Characteristic Symbol Min T yp Max Units
Common Source Power Gain
(V
Power Output at 1 dB Compression
(V
Drain Efficiency
(V
Load Mismatch Tolerance
(V
all phase angles at frequency of test)
= 28 V , P
DD
= 28 V , IDQ = 350 mA, f = 960 MHz) P-1dB 50 55 — Watts
DD
= 28 V , P
DD
= 28 V , P
DD
= 50 W, IDQ = 350 mA, f = 960 MHz) G
OUT
= 50 W, IDQ = 350 mA, f = 960 MHz) h 50 55 — %
OUT
= 50 W, IDQ = 350 mA, f = 960 MHz— Y — — 10:1 —
OUT
ps
12.0 13.0 — dB
Typical Performance
Gain vs. Power Outp ut
16
15
14
13
Gain (dB)
12
11
10
VDD = 28 V
= 350 mA
I
DQ
f = 960 MHz
010203040506070
Power Output (Watts)
Inter modulation Distortion vs. Powe r Output
-15
VDD = 28 V
= 350 mA
I
DQ
-25
= 950.000 MHz
f
1
= 950.100 MHz
f
2
-35
IMD (dB)
-45
-55
0 10203040506070
Output Power (Watts PEP)
3rd Order
5th
7th
2
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