EIC RBV5000, RBV5001, RBV5002, RBV5004, RBV5006 Datasheet

RBV5000 - RBV5010

FEATURES :

MECHANICAL DATA :

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

RBV

5000

RBV

5001

RBV

5002

RBV

5004

RBV

5006

RBV

5008

RBV

5010

0.2

0.2

~

~

+

PRV : 50 - 1000 Volts
Io : 50 Amperes

SILICON BRIDGE RECTIFIERS

RBV25

3.9

4.9

3.2 ± 0.1

∅

±

±

C3

30 ± 0.3

* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* High case dielectric strength of 2000 V

DC

* Ideal for printed circuit board
* Very good heat dissipation

* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 7.7 grams

Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.

0.3

±

20

0.3

±

13.5

7.5

10

0.2

±

7.5

0.2

±

0.2

±

0.2

±

11

1.0 ± 0.1

2.0 ± 0.2

0.7 ± 0.1

Dimensions in millimeters

0.5

±

17.5

RATING

Maximum Recurrent Peak Reverse Voltage V
Maximum RMS Voltage V
Maximum DC Blocking Voltage V
Maximum Average Forward Current Tc = 55°C I

SYMBOL

RRM

RMS

DC

F(AV)

Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method) I
Current Squared Time at t < 8.3 ms.
Maximum Forward Voltage per Diode at IF = 25 Amps. V
Maximum DC Reverse Current Ta = 25 °C I
at Rated DC Blocking Voltage Ta = 100 °C I
Typical Thermal Resistance (Note 1)
Operating Junction Temperature Range T
Storage Temperature Range T

Notes :

1. Thermal Resistance from junction to case with units mounted on heatsink.

FSM

I2t

F

R

R(H)

RθJC

J

STG

50 100 200 400 600 800 1000
35 70 140 280 420 560 700
50 100 200 400 600 800 1000

50

400
660

1.1
10

200

1.5
10

- 40 to + 150

UPDATE : AUGUST 3, 1998

UNIT

Volts
Volts
Volts

Amps.

Amps.

A2S

Volts

A

µ

A

µ

C/W

°

C

°

C

°

RATING AND CHARACTERISTIC CURVES ( RBV5000 - RBV5010 )

PER DIODE

10

1.0

0

0

0.1

PEAK FORWARD SURGE CURRENT,
AVERAGE FORWARD OUTPUT CURRENT

FIG.1 - DERATING CURVE FOR OUTPUT FIG.2 - MAXIMUM NON-REPETITIVE PEAK
RECTIFIED CURRENT FORWARD SURGE CURRENT

60

600

50

40

30

AMPERES

20

10

P.C. Board Mounted with
SINE WAVE R-Load

0 25 50 75 100 125 150 175

CASE TEMPERATURE, ( °C)

500

400

300

AMPERES

200

8.3 ms SINGLE HALF SINE WAVE

100

JEDEC METHOD

NUMBER OF CYCLES AT 60Hz

TJ = 50 °C

10 20 601 2 4 6 40 100

FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE

100

TJ = 100 °C

10

Pulse Width = 300 µs

1 % Duty Cycle

1.0

0.1

FORWARD CURRENT, AMPERES

0.01

TJ = 25 °C

1.2 1.4 1.80.4 0.6 0.8 1.0 1.6

FORWARD VOLTAGE, VOLTS

MICROAMPERES

REVERSE CURRENT,

0.01
40 60 120

20

PERCENT OF RATED REVERSE

VOLTAGE, (%)

TJ = 25 °C

80

100 1400