EIC RBV3500, RBV3501, RBV3502, RBV3504, RBV3506 Datasheet

RBV3500 - RBV3510

FEATURES :

MECHANICAL DATA :

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

0.2

0.2

~

~

+

SILICON BRIDGE RECTIFIERS

PRV : 50 - 1000 Volts
Io : 35 Amperes

* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* High case dielectric strength of 2000 VDC
* Ideal for printed circuit board
* Very good heat dissipation

* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 7.7 grams

RBV25

C3

0.3

±

20

0.3

±

13.5

Dimensions in millimeters

30 ± 0.3

10

±0.2

7.5

±0.2

∅ 3.2 ± 0.1

1.0 ± 0.1

7.5

±0.2

3.9 ±

4.9 ±

0.2

±

11

2.0 ± 0.2

0.7 ± 0.1

0.5

±

17.5

Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.

RBV

RBV

RBV

RBV

RBV

RBV

RATING

Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 Volts
Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 Volts
Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 Volts
Maximum Average Forward Current Tc = 55°C IF(AV) 35 Amps.
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method) IFSM 400 Amps.
Current Squared Time at t < 8.3 ms.
Maximum Forward Voltage per Diode at IF = 17.5 Amps. VF 1.1 Volts
Maximum DC Reverse Current Ta = 25 °C IR 10 µA
at Rated DC Blocking Voltage Ta = 100 °C IR(H) 200 µA
Typical Thermal Resistance (Note 1)
Operating Junction Temperature Range TJ 10 °C
Storage Temperature Range TSTG - 40 to + 150 °C

Notes :

1. Thermal Resistance from junction to case with units mounted on heatsink.

SYMBOL

I2t

RθJC

3500

3501

3502

3504

3506

3508

660

1.5 °C/W

UPDATE : AUGUST 3, 1998

RBV

3510

UNIT

A2S

RATING AND CHARACTERISTIC CURVES ( RBV3500 - RBV3510 )

10

1.0

0

0

0.01

0.1

FIG.1 - DERATING CURVE FOR OUTPUT FIG.2 - MAXIMUM NON-REPETITIVE PEAK
RECTIFIED CURRENT FORWARD SURGE CURRENT

60

600

50

40

30

AMPERES

20

10

P.C. Board Mounted with

AVERAGE FORWARD OUTPUT CURRENT

SINE WAVE R-Load

0 25 50 75 100 125 150 175

CASE TEMPERATURE, ( °C)

500

400

300

TJ = 50 °C

AMPERES

200

8.3 ms SINGLE HALF SINE WAVE

100

PEAK FORWARD SURGE CURRENT,

JEDEC METHOD

10 20 601 2 4 6 40 100

NUMBER OF CYCLES AT 60Hz

FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE PER DIODE

100

TJ = 100 °C

10

Pulse Width = 300 µs

1 % Duty Cycle

1.0

0.1

FORWARD CURRENT, AMPERES

TJ = 25 °C

MICROAMPERES

REVERSE CURRENT,

40 60 120

20

PERCENT OF RATED REVERSE

TJ = 25 °C

80

100 1400

VOLTAGE, (%)

0.01

1.2 1.4 1.80.4 0.6 0.8 1.0 1.6

FORWARD VOLTAGE, VOLTS