EIC RBV2508D, RBV2510D, RBV2500D, RBV2501D, RBV2502D Datasheet

RBV2500D - RBV2510D

FEATURES :

* High current capability

* High surge current capability

* High reliability

* Low reverse current

* Low forward voltage drop

* Ideal for printed circuit board

* Very good heat dissipation

MECHANICAL DATA :

* Case : Reliable low cost construction

utilizing molded plastic technique

* Epoxy : UL94V-O rate flame retardant

* Terminals : Plated lead solderable per

MIL-STD-202, Method 208 guaranteed

* Polarity : Polarity symbols marked on case

* Mounting position : Any

* Weight : 7.7 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25

°

C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

2500D

2501D

2502D

2504D

2506D

2508D

2510D

A2S

1. Thermal Resistance from junction to case with units mounted on a 5" x 6" x 4.9" (12.8cm.x 15.2cm.x 12.4cm.) Al.-Finned Plate

~

~

30 ± 0.3

+

PRV : 50 - 1000 Volts
Io : 25 Amperes

* High case dielectric strength of 2000 VDC

SILICON BRIDGE RECTIFIERS

RBV25

C3

20 ± 0.3

3.9 ± 0.2

4.9 ± 0.2

∅

3.2 ± 0.1

11 ± 0.2

RATING

Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage

SYMBOL

VRRM 50 100 200 400 600 800 1000
VRMS

Maximum DC Blocking Voltage
Maximum Average Forward Current Tc = 55°C

Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms. I
Maximum Forward Voltage per Diode at IF = 25 Amps.
Maximum DC Reverse Current Ta = 25 °C
at Rated DC Blocking Voltage Ta = 100 °C
Typical Thermal Resistance (Note 1) R
Operating Junction Temperature Range
Storage Temperature Range

13.5 ± 0.3

1.0 ± 0.1

±

7.5

0.2

±

7.5

0.2

2.0 ± 0.2

0.7 ± 0.1

10

±

0.2

17.5 ± 0.5

Dimensions in millimeters

RBV

VDC

F(AV)

I

IFSM 400

2

t

VF

IR

IR(H) 200

θ

JC

TJ - 40 to + 150 °

TSTG

RBV

RBV

RBV

35 70 140 280 420 560 700 Volts
50 100 200 400 600 800 1000 Volts

- 40 to + 150

RBV

RBV

RBV

25 Amps.

375

1.1 Volts

10

1.2 °

UNIT

Volts

Amps.

µ

A

µ

A

C/W

C

°

C

Notes :

UPDATE : NOVEMBER 1,1998

RATING AND CHARACTERISTIC CURVES ( RBV2500D - RBV2510D )

5

10

1.0

0

0

10

0.01

1.0

0.1

TJ = 25 °C

FIG.1 - DERATING CURVE FOR OUTPUT FIG.2 - MAXIMUM NON-REPETITIVE PEAK
RECTIFIED CURRENT FORWARD SURGE CURRENT

30

300

25

20

15

AMPERES

10

HEAT-SINK MOUNTING, Tc

(12.8cm x 15.2cm x 12.4cm)

5" x 6" x 4.9" THK.

Al.-Finned plate

250

200

150

TJ = 50 °C

AMPERES

100

8.3 ms SINGLE HALF SINE WAVE

50

PEAK FORWARD SURGE CURRENT,

JEDEC METHOD

AVERAGE FORWARD OUTPUT CURRENT,

0 25 50 75 100 125 150 175

CASE TEMPERATURE, ( °C)

2

NUMBER OF CYCLES AT 60Hz

10 20 601

4 6 40 100

FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE PER DIODE

100

TJ = 100 °C

Pulse Width = 300 µs

0.1

FORWARD CURRENT, AMPERES

0.01

0.8 1.0 1.6

0.6

1.2 1.4 1.80.4

FORWARD VOLTAGE, VOLTS

1 % Duty Cycle

TJ = 25 °C

MICROAMPERES

REVERSE CURRENT,

0

40 60 120

20

PERCENT OF RATED REVERSE

VOLTAGE, (%)

80

100 140