RBV2500 - RBV2510
* High current capability
* High surge current capability
* Low forward voltage drop
* High case dielectric strength of 2000 V
* Ideal for printed circuit board
* Very good heat dissipation
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Single phase, half wave, 60 Hz, resistive or inductive load.
Maximum Average Forward Current Tc = 55
1. Thermal resistance from junction to case with units mounted on a 5" x 6" x 4.9" (12.8cm.x 15.2cm.x 12.4cm.) Al.-Finned Plate
SILICON BRIDGE RECTIFIERS
PRV : 50 - 1000 Volts
Io : 25 Amperes
DC
RBV25
C3
20 ± 0.3
13.5 ± 0.3
Dimensions in millimeters
10
±
0.2
30 ± 0.3
7.5
±
0.2
±
∅
1.0 ± 0.1
7.5
0.2
3.9 ± 0.2
4.9 ± 0.2
3.2 ± 0.1
11 ± 0.2
17.5 ± 0.5
2.0 ± 0.2
0.7 ± 0.1
Rating at 25 °C ambient temperature unless otherwise specified.
For capacitive load, derate current by 20%.
RATING
SYMBOL
RBV
RBV
RBV
RBV
UNIT
RBV
RBV
RBV
Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 Volts
Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 Volts
Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 Volts
°
F(AV)
I
25 Amps.
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms. I
Maximum Forward Voltage per Diode at IF = 12.5 Amps.
Maximum DC Reverse Current Ta = 25 °C
at Rated DC Blocking Voltage Ta = 100 °C
Typical Thermal Resistance (Note 1) R
Operating Junction Temperature Range
Storage Temperature Range TSTG - 40 to + 150 °
Notes :
UPDATE : NOVEMBER 1,1998
IFSM
2
t 375
VF
IR 10 µ
IR(H) 200 µ
θ
JC
J
T
300 Amps.
1.1 Volts
1.45 °
- 40 to + 150 °
A
A
C/W
C
C
RATING AND CHARACTERISTIC CURVES ( RBV2500 - RBV2510 )
FIG.1 - DERATING CURVE FOR OUTPUT FIG.2 - MAXIMUM NON-REPETITIVE PEAK
RECTIFIED CURRENT FORWARD SURGE CURRENT
30
300
25
20
15
AMPERESFORWARD CURRENT, AMPERES
10
HEAT-SINK MOUNTING, Tc
5
5" x 6" x 4.9" THK.
(12.8cm x 15.2cm x 12.4cm)
Al.-Finned plate
250
TJ = 50 °C
150
AMPERES
100
8.3 ms SINGLE HALF SINE WAVE
PEAK FORWARD SURGE CURRENT,
JEDEC METHOD
AVERAGE FORWARD OUTPUT CURRENT,
0 25 50 75 100 125 150 175
CASE TEMPERATURE, ( °C)
NUMBER OF CYCLES AT 60Hz
10 20 601 2 4 6 40 100
FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE PER DIODE
100
10
10
TJ = 100 °C
1.0
1.0
0.1
0.01
Pulse Width = 300 µs
1 % Duty Cycle
TJ = 25 °C
FORWARD VOLTAGE, VOLTS
MICROAMPERES
REVERSE CURRENT,
0
40 60 120
20
PERCENT OF RATED REVERSE
VOLTAGE, (%)
80
100
140