EIC RBV1500D, RBV1501D, RBV1502D, RBV1504D, RBV1506D Datasheet

RBV1500D - RBV1510D

FEATURES :

MECHANICAL DATA :

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

UPDATE : NOVEMBER 1,1998

0.2

0.2

~

~

+

SILICON BRIDGE RECTIFIERS

PRV : 50 - 1000 Volts
Io : 15 Amperes

* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* High case dielectric strength of 2000 VDC
* Ideal for printed circuit board
* Very good heat dissipation

* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 7.7 grams

RBV25

C3

0.3

±

20

0.3

±

13.5

Dimensions in millimeters

10

±0.2

30 ± 0.3

7.5

±0.2

∅ 3.2 ± 0.1

1.0 ± 0.1

7.5

±0.2

3.9 ±

4.9 ±

0.2

±

11

2.0 ± 0.2

0.7 ± 0.1

0.5

±

17.5

Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.

RBV

RBV

RBV

RBV

RBV

RBV

RATING

Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 Volts
Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 Volts
Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 Volts
Maximum Average Forward Current Tc = 55°C IF(AV) 15 Amps.
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method) IFSM 300 Amps.
Current Squared Time at t < 8.3 ms.
Maximum Forward Voltage per Diode at IF = 15 Amps. VF 1.0 Volts
Maximum DC Reverse Current Ta = 25 °C IR 10 µA
at Rated DC Blocking Voltage Ta = 100 °C IR(H) 200 µA
Typical Thermal Resistance (Note 1)
Operating Junction Temperature Range TJ - 40 to + 150 °C
Storage Temperature Range TSTG - 40 to + 150 °C

Notes : 1. Thermal Resistance from junction to case with units mounted on a 5" x 4" x 3" (12.7cm.x 10.2cm.x 7.3cm.) Al.-Finned Plate.

SYMBOL

I2t

RθJC

1500D

1501D

1502D

1504D

1506D

1508D

375

1.5 °C/W

RBV

1510D

UNIT

A2S

RATING AND CHARACTERISTIC CURVES ( RBV1500D - RBV1510D )

12

963

10

1.0

200

0

0

50

10

0.01

1.0

0.1

TJ = 100 °C

15

HEAT-SINK MOUNTING, Tc

FIG.1 - DERATING CURVE FOR OUTPUT FIG.2 - MAXIMUM NON-REPETITIVE PEAK
RECTIFIED CURRENT FORWARD SURGE CURRENT

18

5" x 4" x 3" THK.

(12.7cm x 12.7cm x 7.3cm)

Al.-Finned plate

AMPERES

300

250

TJ = 50 °C

150

AMPERES

100

PEAK FORWARD SURGE CURRENT,

8.3 ms SINGLE HALF SINE WAVE
JEDEC METHOD

AVERAGE FORWARD OUTPUT CURRENT

0 25 50 75 100 125 150 175

CASE TEMPERATURE, ( °C)

NUMBER OF CYCLES AT 60Hz

10 20 601 2 4 6 40 100

FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE PER DIODE

100

Pulse Width = 300 µs

1 % Duty Cycle

0.1

FORWARD CURRENT, AMPERES

TJ = 25 °C

MICROAMPERES

REVERSE CURRENT,

40 60 120

20

PERCENT OF RATED REVERSE

TJ = 25 °C

80

100 1400

VOLTAGE, (%)

0.01

0.4

0.6 0.8 1.0 1.2 1.4 1.6 1.8

FORWARD VOLTAGE, VOLTS