EIC RBV1500D, RBV1501D, RBV1502D, RBV1504D, RBV1506D Datasheet

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RBV1500D - RBV1510D
FEATURES :
MECHANICAL DATA :
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
UPDATE : NOVEMBER 1,1998
0.2
0.2
~
~
+
SILICON BRIDGE RECTIFIERS
PRV : 50 - 1000 Volts Io : 15 Amperes
* High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * High case dielectric strength of 2000 VDC * Ideal for printed circuit board * Very good heat dissipation
* Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 7.7 grams
RBV25
C3
0.3
±
20
0.3
±
13.5
Dimensions in millimeters
10
±0.2
30 ± 0.3
7.5
±0.2
3.2 ± 0.1
1.0 ± 0.1
7.5
±0.2
3.9 ±
4.9 ±
0.2
±
11
2.0 ± 0.2
0.7 ± 0.1
0.5
±
17.5
Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%.
RBV
RBV
RBV
RBV
RBV
RBV
RATING
Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 Volts Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 Volts Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 Volts Maximum Average Forward Current Tc = 55°C IF(AV) 15 Amps. Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) IFSM 300 Amps. Current Squared Time at t < 8.3 ms. Maximum Forward Voltage per Diode at IF = 15 Amps. VF 1.0 Volts Maximum DC Reverse Current Ta = 25 °C IR 10 µA at Rated DC Blocking Voltage Ta = 100 °C IR(H) 200 µA Typical Thermal Resistance (Note 1) Operating Junction Temperature Range TJ - 40 to + 150 °C Storage Temperature Range TSTG - 40 to + 150 °C
Notes : 1. Thermal Resistance from junction to case with units mounted on a 5" x 4" x 3" (12.7cm.x 10.2cm.x 7.3cm.) Al.-Finned Plate.
SYMBOL
I2t
RθJC
1500D
1501D
1502D
1504D
1506D
1508D
375
1.5 °C/W
RBV
1510D
UNIT
A2S
RATING AND CHARACTERISTIC CURVES ( RBV1500D - RBV1510D )
12
963
10
1.0
200
0
0
50
10
0.01
1.0
0.1
TJ = 100 °C
15
HEAT-SINK MOUNTING, Tc
FIG.1 - DERATING CURVE FOR OUTPUT FIG.2 - MAXIMUM NON-REPETITIVE PEAK RECTIFIED CURRENT FORWARD SURGE CURRENT
18
5" x 4" x 3" THK.
(12.7cm x 12.7cm x 7.3cm)
Al.-Finned plate
AMPERES
300
250
TJ = 50 °C
150
AMPERES
100
PEAK FORWARD SURGE CURRENT,
8.3 ms SINGLE HALF SINE WAVE JEDEC METHOD
AVERAGE FORWARD OUTPUT CURRENT
0 25 50 75 100 125 150 175
CASE TEMPERATURE, ( °C)
NUMBER OF CYCLES AT 60Hz
10 20 601 2 4 6 40 100
FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS PER DIODE PER DIODE
100
Pulse Width = 300 µs
1 % Duty Cycle
0.1
FORWARD CURRENT, AMPERES
TJ = 25 °C
MICROAMPERES
REVERSE CURRENT,
40 60 120
20
PERCENT OF RATED REVERSE
TJ = 25 °C
80
100 1400
VOLTAGE, (%)
0.01
0.4
0.6 0.8 1.0 1.2 1.4 1.6 1.8
FORWARD VOLTAGE, VOLTS
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