EIC RBV1000D, RBV1001D, RBV1002D, RBV1004D, RBV1006D Datasheet

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RBV1000D - RBV1010D

FEATURES :

MECHANICAL DATA :

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

RBV

1000D

RBV

1001D

RBV

1002D

RBV

1004D

RBV

1006D

RBV

1008D

RBV

1010D

0.2

PRV : 50 - 1000 Volts Io : 10 Amperes

* High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * High case dielectric strength of 2000 V * Ideal for printed circuit board * Very good heat dissipation

SILICON BRIDGE RECTIFIERS

RBV25

3.9

0.3

13.5

30 ± 0.3

4.9

3.2 ± 0.1

∅

0.2

1.0 ± 0.1

0.5

17.5

* Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 7.7 grams

Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%.

RATING

Maximum Recurrent Peak Reverse Voltage V Maximum RMS Voltage V Maximum DC Blocking Voltage Maximum Average Forward Current Tc = 55°C I Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) I Current Squared Time at t < 8.3 ms. Maximum Forward Voltage per Diode at IF = 10 Amps. V Maximum DC Reverse Current Ta = 25 °C I at Rated DC Blocking Voltage Ta = 100 °C I Typical Thermal Resistance (Note 1) RθJC Operating Junction Temperature Range T Storage Temperature Range T

SYMBOL

RRM

RMS

F(AV)

FSM

I2t

R(H)

STG

2.0 ± 0.2

0.7 ± 0.1

7.5

0.2

7.5

0.2

Dimensions in millimeters

50 100 200 400 600 800 1000 35 70 140 280 420 560 700 50 100 200 400 600 800 1000

300 166

1.0 10

200

2.2

- 40 to + 150

UNIT

Volts Volts Volts

Amps.

A2S

Volts

C/W

Notes :

1. Thermal Resistance from junction to case with units mounted on a 3.2" x 3.2" x 0.12" (8.2cm.x 8.2cm.x 0.3cm.) Al.-Finned Plate.

UPDATE : NOVEMBER 1,1998

RATING AND CHARACTERISTIC CURVES ( RBV1000D - RBV1010D )

PER DIODE

864

1.0

0.1

1.0

0.1

PEAK FORWARD SURGE CURRENT, AVERAGE FORWARD OUTPUT CURRENT

102060

124640

100

FIG.1 - DERATING CURVE FOR OUTPUT FIG.2 - MAXIMUM NON-REPETITIVE PEAK RECTIFIED CURRENT FORWARD SURGE CURRENT

10 250

300

AMPERES

HEAT-SINK MOUNTING, Tc

3.2" x 3.2" x 0.12" THK.

(8.2cm x 8.2cm x 0.3cm)

Al.-FINNED PLATE

0 25 50 75 100 125 150 175

CASE TEMPERATURE, ( °C)

200

150

AMPERES

100

8.3 ms SINGLE HALF SINE WAVE JEDEC METHOD

NUMBER OF CYCLES AT 60Hz

TJ = 50 °C

FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS

PER DIODE

100

TJ = 100 °C

Pulse Width = 300 µs

1 % Duty Cycle

MICROAMPERES

REVERSE CURRENT,

TJ = 25 °C

FORWARD CURRENT, AMPERES

0.01

0.4

0.6

FORWARD VOLTAGE, VOLTS

TJ = 25 °C

0.8 1.0 1.6

1.2 1.4

0.01 40 60 120

100 1400

PERCENT OF RATED REVERSE

VOLTAGE, (%)

1.8