EIC RB150, RB151, RB154, RB152, RB156 Datasheet
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PRV : 50 - 800 Volts
Io : 1.5 Amperes
FEATURES :
* High case dielectric strength of 2000 V
MECHANICAL DATA :
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
°
C ambient temperature unless otherwise specified.
UPDATE : NOVEMBER 1,1998
0.085 (2.16)
ELECTRONICS INDUSTRY (USA) CO., LTD.
103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND
TEL. : (66 2) 326-0102, 739-4580 FAX. : (66 2) 326-0933 E-mail : eicfirst @ iname.com http. : // www.eicsemi.com
RB150 - RB158
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
DC
* Ideal for printed circuit board
* Case : Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 3.4 grams
0.825 (20.95)
0.500 (12.7)
0.105 (2.66)
SILICON BRIDGE RECTIFIERS
RB
0.71 (18.0)
AC AC
0.035 (0.89)
0.028 (0.71)
0.16 (4.00)
0.14 (3.55)
0.276 (7.01 )
0.236 (5.99)
Dimensions in inches and ( millimeter )
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 Volts
Maximum RMS Voltage VRMS 35 70 140 280 420 560 Volts
Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 Volts
Maximum Average Forward Current Tc=50°C
Peak Forward Surge Current, Single half sine wave
Superimposed on rated load (JEDEC Method) IFSM 40 Amps.
Maximum Forward Voltage per Diode at IF = 1 Amp. VF 0.95 Volt
Maximum DC Reverse Current Ta = 25 °C
at Rated DC Blocking Voltage Ta = 100 °C
Typical Thermal Resistance (Note 1)
Operating Junction Temperature Range TJ - 40 to + 140
Storage Temperature Range TSTG - 40 to + 140
Notes :
1 ) Thermal resistance from Junction to lead mounted on P.C. Board with 0.47" X 0.47" ( 12mm X 12mm ) Cu pads.
SYMBOL RB150 RB151 RB152 RB154 RB156 RB158 UNIT
IF(AV) 1.5 Amps.
IR 10
IR(H) 100
RθJL
15
µA
µA
°C/W
°C
°C
10
10
80
100
140
0204060120
TJ = 25 °C
ELECTRONICS INDUSTRY (USA) CO., LTD.
103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND
TEL. : (66 2) 326-0102, 739-4580 FAX. : (66 2) 326-0933 E-mail : eicfirst @ iname.com http. : // www.eicsemi.com
RATING AND CHARACTERISTIC CURVES ( RB150 - RB158 )
FIG.1 - DERATING CURVE FOR OUTPUT FIG.2 - MAXIMUM NON-REPETITIVE PEAK
RECTIFIED CURRENT FORWARD SURGE CURRENT
2.0
40
35
1.5
1.0
0.5
CURRENT, AMPERES
AVERAGE FORWARD OUTPUT
0
0 20 40 60 80 100 120 140 1 2 4 6 10 20 40 60 100
P.C. Board Mounted with
0.47" X 0.47" ( 12mm X 12mm )
Cu. pads.
PEAK FORWARD SURGE
CASE TEMPERATURE, ( °C)
30
25
20
15
CURRENT, AMPERES
10
5
0
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE
TJ = 100 °C
1.0
TJ = 25 °C
0.1
1.0
FORWARD CURRENT, AMPERES
0.01
0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
FORWARD VOLTAGE, VOLTS
0.01
REVERSE CURRENT, MICROAMPERES
PERCENT OF RATED REVERSE
VOLTAGE, (%)
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