* High case dielectric strength
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
= 1 Amp., Irr = 0.25 Amp.
2 ) Thermal Resistance from junction to case with units mounted on a 5" x 6" x 4.9" (12.8cm.x 15.2cm.x 12.4cm.) Al.-Finned Plate.
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Fast switching for high efficiency
0.570(14.50)
0.728(18.50)
0.685(16.70)
1.130(28.70)
0.210(5.30)
0.252(6.40)
0.248(6.30)
0.905(23.0)
0.826(21.0)
0.100(2.50)
φ
0.090(2.30)
* Case : Molded plastic with heatsink integrally
mounted in the bridge encapsulation
* Epoxy : UL94V-O rate flame retardant
* Terminals : plated .25" (6.35 mm). Faston
* Polarity : Polarity symbols marked on case
* Mounting position : Bolt down on heat-sink with
silicone thermal compound between bridge
and mounting surface for maximum heat
transfer efficiency.
0.658(16.70)
0.032(0.81)
0.310(7.87)
Metal Heatsink
Dimensions in inches and ( millimeters )
* Weight : 17.1 grams
RATING
Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 Volts
Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 Volts
Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 Volts
Maximum Average Forward Current Tc = 55 °C IF(AV) 25 Amps.
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method) IFSM 300 Amps.
Current Squared Time at t < 8.3 ms.
Maximum Forward Voltage drop per Diode at IF = 12.5 Amps. VF 1.3 Volts
Maximum DC Reverse Current Ta = 25 °C IR 10 µA
at Rated DC Blocking Voltage Ta = 100 °C IR(H) 200 µA
Maximum Reverse Recovery Time (Note 1) Trr 150 250 500 ns
Typical Thermal Resistance per diode (Note 2) RθJC 1.45 °C/W
Operating Junction Temperature Range TJ - 50 to + 150 °C
Storage Temperature Range TSTG - 50 to + 150 °C
SYMBOL
I2t
375
UNIT
A2S
F
R
UPDATE : APRIL 21, 1998
RATING AND CHARACTERISTIC CURVES ( FBR2500 - FBR2510 )
FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50 Ω 10 Ω
D.U.T.
50 Vdc
(approx)
1 Ω
NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF.
2. Rise time = 10 ns max., Source Impedance = 50 ohms.
3. All Resistors = Non-inductive Types.
OSCILLOSCOPE
( NOTE 1 )
PULSE
GENERATOR
( NOTE 2 )
Trr
SET TIME BASE FOR 50/200 ns/cm
FIG.2 - DERATING CURVE FOR OUTPUT FIG.3 - MAXIMUM NON-REPETITIVE PEAK
RECTIFIED CURRENT FORWARD SURGE CURRENT
25
20
15
10
CURRENT, AMPERES
5
AVERAGE FORWARD OUTPUT
60Hz RESISTIVE OR INDUCTIVE LOAD
0 25 50 75 100 125 150 175 1 2 4 6 10 20 40 60 100
CASE TEMPERATURE, ( °C)
300
240
180
120
CURRENT, AMPERES
60
PEAK FORWARD SURGE
NUMBER OF CYCLES AT 60Hz
Tc = 55 °C
FIG.4 - TYPICAL FORWARD CHARACTERISTICS FIG.5 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE PER DIODE
100 10
TJ = 100 °C
10
1.0 0.1
Pulse Width = 300 µs
0.1
2% Duty Cycle
TJ = 25 °C
FORWARD CURRENT, AMPERES
1.0
TJ = 25 °C
0.01
REVERSE CURRENT, MICROAMPERES
80
100 1400 20 40 60 120
PERCENT OF RATED REVERSE
VOLTAGE, (%)
0.01
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
FORWARD VOLTAGE, VOLTS