EIC BZX55C75, BZX55C6V8, BZX55C62, BZX55C5V6, BZX55C51 Datasheet
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BZX55C2V4 ~ BZX55C200
SILICON ZENER DIODES
VZ : 2.4 - 200 Volts
PD : 500 mW
FEATURES :
* Complete 2.4 to 200 Volts
* High surge current capability
* High peak reverse power dissipation
* High reliability
* Low leakage current
MECHANICAL DATA
* Lead : Axial lead solderable per MIL-STD-202,
* Polarity : Color band denotes cathode end. When operated in zener mode,
* Mounting position : Any
DO - 35
0.079(2.0 )max.
1.00 (25.4)
min.
0.150 (3.8)
max.
* Case : Molded glass
method 208 guaranteed
cathode will be positive with respect to anode
* Weight : 0.13 gram
MAXIMUM RATINGS
Rating at 25 °C ambient temperature unless otherwise specified
Rating Symbol Value Unit
Power Dissipation (Note)
0.020 (0.52)max.
1.00 (25.4)
min.
Dimensions in inches and ( millimeters )
P
D
500 mW
Maximum Forward Voltage at IF =100 mA V
Maximum Thermal Resistance Junction to Ambient Air (Note1) RθJA 0.3 K / mW
Junction Temperature Range
Storage Temperature Range
Note : 1. Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case.
F
T
j
T
s
1.0 V
- 55 to + 175
- 55 to + 175
°
C
°
C
UPDATE : JANUARY 18, 2002
ELECTRICAL CHARACTERISTICS
Rating at = 25
°
C ambient temperature unless otherwise specified
Zener Voltage
Maximum Zener
Maximum Reverse
TYPE
Number
Nom1)Min2)Max
(µµA)
(µµA)
(V)
(% / K)
BZX55C2V4
2.4
2.28
2.56585
600150
1001-0.09...-0.06
BZX55C2V7
2.7
2.5
2.9585
600110501
-0.09...-0.06
BZX55C3V0
3.0
2.8
3.2585
60014401
-0.08...-0.05
BZX55C3V3
3.3
3.1
3.5585
60012401
-0.08...-0.05
BZX55C3V6
3.6
3.4
3.8585
60012401
-0.08...-0.05
BZX55C3V9
3.9
3.7
4.1585
60012401
-0.08...-0.05
BZX55C4V3
4.3
4.0
4.6575
60011201
-0.06...-0.03
BZX55C4V7
4.7
4.4
5.0560
60010.5101
-0.05...+0.02
BZX55C5V1
5.1
4.8
5.4535
55010.121
-0.02...+0.02
BZX55C5V6
5.6
5.2
6.0525
45010.121
-0.05...+0.05
BZX55C6V2
6.2
5.8
6.6510
20010.122
0.03...0.06
BZX55C6V8
6.8
6.4
7.258
15010.123
0.03...0.07
BZX55C7V5
7.5
7.0
7.957501
0.125
0.03...0.07
BZX55C8V2
8.2
7.7
8.757501
0.126.2
0.03...0.08
BZX55C9V1
9.1
8.5
9.6510501
0.126.8
0.03...0.09
BZX55C10
10
9.4
10.6515701
0.127.5
0.03...0.10
BZX55C11
11
10.4
11.6520701
0.128.2
0.03...0.11
BZX55C12
12
11.4
12.7520901
0.129.1
0.03...0.11
BZX55C13
13
12.4
14.1526
11010.1210
0.03...0.11
BZX55C15
14
13.8
15.6530
11010.1211
0.03...0.11
BZX55C16
16
15.3
17.1540
17010.1212
0.03...0.11
BZX55C18
18
16.8
19.1550
17010.1213
0.03...0.11
BZX55C20
20
18.8
21.2555
22010.1215
0.03...0.11
BZX55C22
22
20.8
23.3555
22010.1216
0.04...0.12
BZX55C24
24
22.8
25.6580
22010.1218
0.04...0.12
BZX55C27
27
25.1
28.9580
22010.1220
0.04...0.12
BZX55C30
302832580
22010.1222
0.04...0.12
BZX55C33
333135580
22010.1224
0.04...0.12
BZX55C36
363438580
22010.1227
0.04...0.12
BZX55C39
393741
2.590500
0.5
0.1530
0.04...0.12
BZX55C43
434046
2.590500
0.5
0.1533
0.04...0.12
BZX55C47
474450
2.5
110
600
0.5
0.1536
0.04...0.12
BZX55C51
514854
2.5
125
700
0.5
0.11039
0.04...0.12
BZX55C56
565260
2.5
135
700
0.5
0.11043
0.04...0.12
BZX55C62
625866
2.5
150
1000
0.5
0.11047
0.04...0.12
BZX55C68
686472
2.5
200
1000
0.5
0.11051
0.04...0.12
BZX55C75
757079
2.5
250
1000
0.5
0.11056
0.04...0.12
BZX55C82
827787
2.5
300
1500
0.25
0.11062
0.05...0.12
BZX55C91
9185961450
2000
0.1
0.11068
0.05...0.12
BZX55C100
100941061450
5000
0.1
0.11075
0.05...0.12
BZX55C110
110
104
1161600
5000
0.1
0.11082
0.05...0.12
BZX55C120
120
114
1271800
5500
0.1
0.11091
0.05...0.12
BZX55C130
130
124
1411950
6000
0.1
0.110100
0.05...0.12
BZX55C150
150
138
15611250
6500
0.1
0.110110
0.05...0.12
BZX55C160
160
153
17111400
7000
0.1
0.110120
0.05...0.12
BZX55C180
180
168
19111700
8500
0.1
0.110130
0.05...0.12
BZX55C200
200
188
21212000
10000
0.1
0.110150
0.05...0.12
Note
1) Tested with pulses tp = 20 ms
2) Valid Provided that leads are kept at ambient temperature at a distance of 8 mm from case
VZ @ I
ZT
2)
I
ZT ZZT
Impedance Leakage Current of Zener Voltage
@ IZTZZk @ I
ZK
I
ZK
(V) (V) (V) (mA) (Ohms) (Ohms) (mA)
Temp. coefficient
I
R
IR
2)
at V
R
TK
VZ
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