EIC 2SK3408 Datasheet
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
2SK3408
DESCRIPTION
The 2SK3408 is a switching device which can be driven
directly by a 4-V power source.
The 2SK3408 features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of dynamic clamp of relay and so on.
FEATURES
• Can be driven by a 4-V power source
• Low on-state resistance
= 195 mΩ MAX. (VGS = 10 V, ID = 0.5 A)
RDS(on)1
R
= 250 mΩ MAX. (VGS = 4.5 V, ID = 0.5 A)
DS(on)2
R
= 260 mΩ MAX. (VGS = 4.0 V, ID = 0.5 A)
DS(on)3
• Built-in G-S protection diode against ESD.
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK3408 SC-96 Mini Mold (Thin Type)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) V
Drain to Gate Voltage (V
Gate to Source Voltage (V
Drain Current (DC) (T
Drain Current (pulse)
Total Power Dissipation (T
Total Power Dissipation (TA
GS = 0 V) V
DS = 0 V) V
C = 25°C) I
Note1
C = 25°C) P
= 25°C)
Note2
DSS
DGS
GSS
D(DC)
I
D(pulse)
P
Channel Temperature Tch
Storage Temperature Tstg
T1
T2
43±5V
43±5V
±20 V
±1.0 A
±4.0 A
0.2 W
1.25 W
150 °C
–55 to +150 °C
PACKAGE DRAWING (Unit : mm)
+0.1
0.4
–0.05
+0.1
–0.15
0.65
1.5
2.8 ±0.2
1
0.95
3
0.95
1.9
2.9 ±0.2
2
1
: Gate
2 : Source
3 : Drain
EQUIVALENT CIRCUIT
Gate
Gate
Protection
Diode
Marking: XF
0.9 to 1.1
Drain
Source
0.65
0.16
0 to 0.1
Body
Diode
+0.1
–0.06
Notes 1.
PW ≤ 10 µs, Duty Cycle ≤ 1%
Mounted on FR-4 Board, t ≤ 5 sec.
2.
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D15016EJ3V0DS00 (3rd edition)
Date Published April 2001 NS CP(K)
Printed in Japan
The mark ★ shows major revised points.
©
2000
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
2SK3408
Zero Gate Voltage Drain Current I
Gate Leakage Current I
Gate Cut-off Voltage V
DSS
VDS = 30.4 V, VGS = 0 V10
GSS
VGS = ±16 V, VDS = 0 V ±10
GS(off)VDS
= 10 V, ID = 1 mA 1.5 2.0 2.5 V
A
µ
A
µ
Forward Transfer Admittance | yfs |VDS = 10 V, ID = 0.5 A12.0S
Drain to Source On-state Resi stance R
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn-on Delay Time t
Rise Time t
Turn-off Delay Time t
Fall Time t
Total Gate Charge Q
Gate to Source Charge Q
Gate to Drain Charge Q
Body Diode Forward Voltage V
Reverse Recovery Time t
Reverse Recovery Charge Q
DS(on)1VGS
DS(on)2VGS
R
DS(on)3VGS
R
iss
oss
rss
d(on)
r
d(off)
f
G
GS
GD
F(S-D)IF
rr
rr
= 10 V, ID = 0.5 A 155 195 mΩ
= 4.5 V, ID = 0.5 A 185 250 mΩ
= 4.0 V, ID = 0.5 A 195 260 mΩ
VDS = 10 V 230 pF
VGS = 0 V50pF
f = 1 MHz 30 pF
VDD = 20 V18ns
ID = 0.5 A14ns
GS(on)
V
= 10 V 115 ns
RG = 10
Ω 38 ns
DS
V
= 30.4 V4.0nC
ID = 1.0 A1.0nC
VGS = 10 V1.0nC
= 1.0 A, VGS = 0 V0.81V
IF = 1.0 A, VGS = 0 V25ns
di/dt = 100 A /
s16nC
µ
TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE
D.U.T.
V
GS
10%
0
0
10%
td(on)
90%
tr
I
D
ton
V
GS
I
D
td(off)
(on)
t
off
90%
90%
10%
t
f
PG.
D.U.T.
IG = 2 mA
50 Ω
PG.
V
GS
0
τ
τ = 1 s
µ
Duty Cycle ≤ 1%
L
R
GS
V
G
R
Wave Form
V
DD
I
D
Wave Form
R
L
V
DD
2
Data Sheet D15016EJ3V0DS
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
dT - Derating Factor - %
20
0
0
30
60
90
TA - Ambient Temperature -
120
˚C
150
★
10
0.1
- Drain Current - A
D
I
0.01
FORWARD BIAS SAFE OPERATING AREA
V)
10
Limited
=
DS(on)
GS
R
1
Single Pulse
Mounted on 250 mm
Connected to Drain Electrode in
50 mm x 50 mm x 1.6 mm FR-4 Board
(@V
I
D
(DC)
2
x 35 m Copper Pad
µ
0.1
(pulse)
5 s
100
PW
10
ms
ms
10 1001
I
D
VDS - Drain to Source Voltage - V
2SK3408
=
1
ms
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
4
V
GS
=10 V
3
4.5 V
4.0 V
2
- Drain Current - A
D
I
1
0
0
0.2 0.4 0.6 0.8
DS
- Drain to Source Voltage - V
V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
2.5
2
1.5
- Gate Cut-off Voltage - V
GS(off)
V
1
−50
T
ch
- Channel Temperature - ˚C
FORWARD TRANSFER CHARACTERISTICS
10
1
0.1
= 125˚C
A
T
−
75˚C
25˚C
25˚C
0.01
0.001
ID - Drain Current - A
0.0001
1
0.00001
10
2
VDS = 10 V
34
VGS - Gate to Sorce Voltage - V
FORWARD TRANSFER ADMITTANCE Vs.
DRAIN CURRENT
V
DS
I
D
= 1 mA
= 10 V
10
1
TA = −25˚C
25˚C
75˚C
0.1
| - Forward Transfer Admittance - S
fs
| y
0.01
50 1000
150
0.01
0.1
125˚C
1
VDS = 10 V
10
ID - Drain Current - A
Data Sheet D15016EJ3V0DS
3
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