DYNEX TV1825FM, TV1825FK, TV1824FM, TV1824FK, TV1822FM Datasheet

TV18..F

1/8

APPLICATIONS

■ Induction Heating

■ A.C. Motor Drives

■ Snubber Diode

■ Welding

■ High Frequency Rectification

■ UPS

FEATURES

■ Thermal Fatigue Free Pressure Contact

■ High Surge Capability

■ Low Recovery Charge

VOLTAGE RATINGS

KEY PARAMETERS

V

RRM

2500V

I

F(AV)

200A

I

FSM

3500A

Q

r

240µC

t

rr

2.0µs

2500
2400
2200
2000

TV18 25F M or K
TV18 24F M or K
TV18 22F M or K
TV18 20F M or K

Conditions

V

RSM

= V

RRM

+ 100V

For 3/4" 16 UNF thread, add suffix K, e.g. TV18 25FK.
For M16 thread, add suffix M, e.g. TV18 25FM.
For stud anode add 'R' to type number, e.g. TV18 25FMR.

Type Number Repetitive Peak

Reverse Voltage

V

RRM

V

Outline type codes: DO9.

See Package Details for further information.

CURRENT RATINGS

Symbol Parameter Conditions UnitsMax.

I

F(AV)

Mean forward current

I

F(RMS)

RMS value

Half wave resistive load, T

case

= 65oC 200 A

T

case

= 65oC 320 A

TV18..F

Fast Recovery Diode

Replaces March 1998 version, DS4211-2.2 DS4211-3.0 January 2000

TV18..F

2/8

SURGE RATINGS

Conditions

Max. Units

3.5 kA

61 x 10

3

A2sI2t for fusingI2t

Surge (non-repetitive) forward currentI

FSM

ParameterSymbol

10ms half sine; with 0% V

RRM, Tj

= 150oC

2.8 kA

39.2x 10

3

A2sI2t for fusingI2t

Surge (non-repetitive) forward currentI

FSM

10ms half sine; with 50% V

RRM, Tj

= 150oC

THERMAL AND MECHANICAL DATA

dc

Conditions Max. Units

o

C/W- 0.06

Thermal resistance - case to heatsinkR

th(c-h)

Thermal resistance - junction to caseR

th(j-c)

Mounting torque 35.0Nm
with mounting compound

Symbol

Parameter

- 0.16

o

C/W

Min.

t

rr

50

Symbol Typ. Units

Parameter

V

FM

Forward voltage

I

RRM

Peak reverse current
Reverse recovery time

Q

RA1

Recovered charge (50% chord)

I

RM

Reverse recovery current

K

Soft factor

V

TO

Threshold voltage

r

T

Slope resistance

V

FRM

Forward recovery voltage di/dt = 1000A/µs, Tj = 125oC - 120 V

At Tvj = 150oC - 1.54 mΩ

At Tvj = 150oC - 1.64 V

1.3 - -

- 160 A

- 240 µC

- 3.2

µs

At V

RRM

, T

case

= 150oC-mA

At 1000A peak, T

case

= 25oC - 3.1 V

Conditions Max.

I

F

= 1000A, diRR/dt = 100A/µs

T

case

= 150oC, VR = 100V

CHARACTERISTICS

T

stg

Storage temperature range

-55 175

o

C

Nm

35.030.0Mounting torque-

T

vj

Virtual junction temperature

On-state (conducting) - 150

o

C

TV18..F

3/8

DEFINITION OF K FACTOR AND Q

RA1

0.5x I

RR

I

RR

dIR/dt

t

1

t

2

τ

Q

RA1

= 0.5x IRR(t1 + t2)

k = t

1/t2

CURVES

500

750

1000

1250

1500

1750

2000

Instantaneous forward current I

F

- (A)

1.0 2.0 3.0 4.0 5.0
Instantaneous forward voltage V

F

- (V)

Measured under pulse

conditions

Tj = 150˚C

Tj = 25˚C

Fig.1 Maximum (limit) forward characteristics