DYNEX TK2618K, TK2616M, TK2616K, TK2614M, TK2614K Datasheet
...
TK26
TK26
Phase Control Thyristor
Advance Information
Replaces January 2000 version, DS4254-4.0 DS4254-5.0 July 2001
FEATURES
■ High Surge Capability
APPLICATIONS
■ High Power Drives
■ High Voltage Power Supplies
■ DC Motor Control
■ Welding
■ Battery Chargers
VOLTAGE RATINGS
Type Number Repetitive Peak
Voltages
V
DRM VRRM
V
TK26 20 M or K
TK26 18 M or K
TK26 16 M or K
TK26 14 M or K
Lower voltage grades available.
2000
1800
1600
1400
Conditions
Tvj = 0˚ to 125˚C,
I
= I
RRM
, V
& V
& V
RRM tp
= 100mA,
= 10ms,
=
RSM
+ 100V
RRM
DRM
V
DRM
V
DSM
V
DRM
respectively
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table, then:-
Add K to type number for 3/4" 16 UNF thread, e.g. TK26 18K.
or
Add M to type number for M16 thread, e.g. TK26 14M.
Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.
KEY PARAMETERS
V
DRM
I
T(AV)
I
TSM
dVdt* 200V/
dI/dt 500A/
*Higher dV/dt selections available
2000V
180A
4000A
µs
µs
Outline type code: TO93.
See Package Details for further information.
Fig. 1 Package outline
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TK26
CURRENT RATINGS
T
= 60˚C unless stated otherwise.
case
Symbol Parameter Conditions UnitsMax.
I
T(AV)
I
T(RMS)
I
T
T
= 80˚C unless stated otherwise.
case
Mean on-state current
RMS value
Continuous (direct) on-state current
Half wave resistive load 235 A
- 369 A
- 306 A
Symbol Parameter Conditions UnitsMax.
I
T(AV)
I
T(RMS)
I
Mean on-state current
RMS value
T
Continuous (direct) on-state current
Half wave resistive load 180 A
- 275 A
- 220 A
SURGE RATINGS
Symbol
I
TSM
2
I
tI
Parameter
Surge (non-repetitive) on-state current
2
t for fusing
10ms half sine; T
Conditions
VR = 50% V
case
- 1/4 sine
RRM
= 125oC
51.2 x 10
Max. Units
3.2 kA
3
A2s
I
TSM
I2t
Surge (non-repetitive) on-state current
2
I
t for fusing 80 x 10
THERMAL AND MECHANICAL DATA
Symbol
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th(j-c)
th(c-h)
T
T
stg
-
Thermal resistance - case to heatsinkR
vj
Virtual junction temperature
Storage temperature range
Mounting torque
Parameter
10ms half sine; T
= 125oC
case
4.0 kA
VR = 0
Conditions Min. Max. Units
dc
Mounting torque 35.0Nm
- 0.13
0.06-
with mounting compound
On-state (conducting) - 125
Reverse (blocking)
125
-
–40 150
30.0 35.0 Nm
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3
A2s
o
C/WThermal resistance - junction to caseR
o
C/W
o
C
o
C
o
C
DYNAMIC CHARACTERISTICS
TK26
ParameterSymbol Conditions
V
TM
I
RRM/IDRM
Maximum on-state voltage At 450A peak, T
Peak reverse and off-state current At V
RRM/VDRM
dV/dt Maximum linear rate of rise of off-state voltage To 60% V
Gate source 20V, 20Ω
dI/dt
V
T(TO)
r
t
I
I
Rate of rise of on-state current
Threshold voltage At Tvj = 125oC
T
gd
L
H
On-state slope resistance At Tvj = 125oC
Delay time
Latching current Tj = 25oC, VD = 12V
Holding current Tj = 25oC, VD = 12V, ITM = 1A
tr ≤ 0.5µs, Tj = 125˚C
= 300V, IG = 1A, IT = 50A, dI/dt = 50A/µs,
V
D
dIG/dt = 1A/µs, Tj = 25oC
GATE TRIGGER CHARACTERISTICS AND RATINGS
= 25oC
case
, T
= 125oC
case
= 125oC, Gate open circuit
DRM Tj
Repetitive 50Hz
Non-repetitive
Min. Max. Units
- 1.85 V
-25mA
- 200 V/µs
- 500 A/µs
- 800 A/µs
1.25-V
- 1.33 mΩ
- 1.5 µs
--mA
-50mA
ConditionsParameterSymbol
V
GT
I
GT
V
GD
V
FGM
V
FGN
V
RGM
I
FGM
P
GM
P
G(AV)
Gate trigger voltage V
Gate trigger current
Gate non-trigger voltage At V
DRM
V
DRM
= 12V, T
= 12V, T
DRM Tcase
= 25oC, RL = 6Ω
case
= 25oC, RL = 6Ω
case
= 125oC, RL = 1kΩ
Peak forward gate voltage Anode positive with respect to cathode
Peak forward gate voltage Anode negative with respect to cathode
Peak reverse gate voltage
Peak forward gate current Anode positive with respect to cathode
Peak gate power -
Mean gate power
Typ. Max. Units
- 3.0 V
- 200 mA
- 0.2 V
-30V
- 0.25 V
-5V
-4A
-16W
-3W
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