DYNEX TK1812M, TK1812K, TK1810M, TK1810K Datasheet
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TK18
www.dynexsemi.com
FEATURES
■ High Surge Capability
APPLICATIONS
■ High Power Drives
■ High Voltage Power Supplies
■ DC Motor Control
■ Welding
■ Battery Chargers
VOLTAGE RATINGS
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table, then:-
Add K to type number for 1/2" 20 UNF thread, e.g. TK18 12K.
or
Add M to type number for M12 thread, e.g. TK18 12M.
Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.
KEY PARAMETERS
V
DRM
1200V
I
T(AV)
115A
I
TSM
2000A
dVdt* 200V/
µs
dI/dt 500A/
µs
*Higher dV/dt selections available
TK18
Phase Control Thyristor
Advance Information
Replaces January 2000 version, DS45253-4.0 DS4253-5.0 July 2001
TK18 12 M or K
TK18 10 M or K
Conditions
Tvj = 0˚ to 125˚C,
I
DRM
= I
RRM
= 100mA,
V
DRM
, V
RRM tp
= 10ms,
V
DSM
& V
RSM
=
V
DRM
& V
RRM
+ 100V
respectively
Lower voltage grades available.
Type Number Repetitive Peak
Voltages
V
DRM VRRM
V
1200
1000
Fig. 1 Package outline
Outline type code: TO94.
See Package Details for further information.
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TK18
SURGE RATINGS
Conditions
10ms half sine; T
case
= 125oC
VR = 50% V
RRM
- 1/4 sine
10ms half sine; T
case
= 125oC
VR = 0
Max. Units
Symbol
Parameter
I
TSM
Surge (non-repetitive) on-state current
I
2
tI
2
t for fusing
I
TSM
Surge (non-repetitive) on-state current
I
2
t
I
2
t for fusing 20.0 x 103A2s
2.0 kA
12.8 x 10
3
A2s
1.6 kA
THERMAL AND MECHANICAL DATA
Conditions Min. Max. Units
Symbol
Parameter
- 0.24
o
C/W
Thermal resistance - junction to caseR
th(j-c)
Mounting torque 15.0Nm
with mounting compound
0.08-
o
C/W
Thermal resistance - case to heatsinkR
th(c-h)
125
o
C
T
vj
Virtual junction temperature
T
stg
Storage temperature range
Reverse (blocking)
-
Mounting torque
12.0 15.0 Nm
–40 150
o
C
-
On-state (conducting) - 125
o
C
dc
T
case
= 80˚C unless stated otherwise.
Symbol Parameter Conditions UnitsMax.
I
T(AV)
Mean on-state current
I
T(RMS)
RMS value
I
T
Continuous (direct) on-state current
Half wave resistive load 115 A
- 180 A
- 155 A
CURRENT RATINGS
T
case
= 60˚C unless stated otherwise.
Symbol Parameter Conditions UnitsMax.
I
T(AV)
Mean on-state current
I
T(RMS)
RMS value
I
T
Continuous (direct) on-state current
Half wave resistive load 152 A
- 239 A
- 206 A
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TK18
www.dynexsemi.com
DYNAMIC CHARACTERISTICS
V
TM
ParameterSymbol Conditions
Maximum on-state voltage At 300A peak, T
case
= 25oC
I
RRM/IDRM
Peak reverse and off-state current At V
RRM/VDRM
, T
case
= 125oC
Gate source 20V, 20Ω
tr ≤ 0.5µs, Tj = 125˚C
dV/dt Maximum linear rate of rise of off-state voltage To 60% V
DRM Tj
= 125oC, Gate open circuit
Min. Max. Units
- 1.5 V
-10mA
- 200 V/µs
Repetitive 50Hz
- 500 A/µs
Non-repetitive
- 800 A/µs
Rate of rise of on-state current
dI/dt
V
T(TO)
Threshold voltage At Tvj = 125oC
r
T
On-state slope resistance At Tvj = 125oC
t
gd
Delay time
I
L
Latching current Tj = 25oC, VD = 12V
I
H
Holding current Tj = 25oC, VD = 12V, ITM = 1A
0.9-V
- 2.0 mΩ
- 1.5 µs
V
D
= 300V, IG = 1A, IT = 50A, dI/dt = 50A/µs,
dIG/dt = 1A/µs, Tj = 25oC
--mA
-50mA
GATE TRIGGER CHARACTERISTICS AND RATINGS
V
DRM
= 12V, T
case
= 25oC, RL = 6Ω
ConditionsParameterSymbol
V
GT
Gate trigger voltage V
DRM
= 12V, T
case
= 25oC, RL = 6Ω
I
GT
Gate trigger current
V
GD
Gate non-trigger voltage At V
DRM Tcase
= 125oC, RL = 12Ω
V
FGM
Peak forward gate voltage Anode positive with respect to cathode
V
FGN
Peak forward gate voltage Anode negative with respect to cathode
V
RGM
Peak reverse gate voltage
I
FGM
Peak forward gate current Anode positive with respect to cathode
P
GM
Peak gate power -
P
G(AV)
Mean gate power
- 3.0 V
- 125 mA
- 0.2 V
- 3.0 V
- 0.25 V
-5V
-4A
-16W
-3W
Typ. Max. Units
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