DYNEX TK1220M, TK1220K, TK1218M, TK1218K, TK1216K Datasheet
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TK12
TK12
Phase Control Thyristor
Advance Information
Replaces January 2000 version, DS4252-4.0 DS4252-5.0 July 2001
FEATURES
■ High Surge Capability
APPLICATIONS
■ High Power Drives
■ High Voltage Power Supplies
■ DC Motor Control
■ Welding
■ Battery Chargers
VOLTAGE RATINGS
Type Number Repetitive Peak
Voltages
V
DRM VRRM
V
TK12 20 M or K
TK12 18 M or K
TK12 16 M or K
TK12 14 M or K
Lower voltage grades available.
2000
1800
1600
1400
Conditions
Tvj = 0˚ to 125˚C,
I
= I
RRM
, V
& V
& V
RRM tp
= 100mA,
= 10ms,
=
RSM
+ 100V
RRM
DRM
V
DRM
V
DSM
V
DRM
Respectively
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table, then:-
Add K to type number for 1/2" 20 UNF thread, e.g. TK12 18K.
or
Add M to type number for M12 thread, e.g. TK12 14M.
Note: Please use the complete part number when ordering and
quote this number in any future correspondance relating to your
order.
KEY PARAMETERS
V
DRM
I
T(AV)
I
TSM
dVdt* 200V/
dI/dt 500A/
*Higher dV/dt selections available
2000V
75A
1400A
µs
µs
Outline type code: TO94.
See Package Details for further information.
Fig. 1 Package outline
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TK12
CURRENT RATINGS
T
= 60˚C unless stated otherwise.
case
Symbol Parameter Conditions
I
T(AV)
I
T(RMS)
I
T
T
= 80˚C unless stated otherwise.
case
Mean on-state current
RMS value
Continuous (direct) on-state current
Half wave resistive load 104 A
Symbol Parameter Conditions
I
T(AV)
I
T(RMS)
I
Mean on-state current
RMS value
T
Continuous (direct) on-state current
Half wave resistive load 75 A
SURGE RATINGS
Symbol
I
TSM
2
I
tI
Parameter
Surge (non-repetitive) on-state current
2
t for fusing
10ms half sine; T
Conditions
VR = 50% V
RRM
UnitsMax.
- 163 A
- 139 A
UnitsMax.
- 120 A
- 100 A
Max. Units
= 125oC
case
- 1/4 sine
1.12 kA
6.2 x 10
3
A2s
I
TSM
I2t
Surge (non-repetitive) on-state current
2
I
t for fusing 9.8 x 10
THERMAL AND MECHANICAL DATA
Symbol
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th(j-c)
th(c-h)
T
T
stg
-
Thermal resistance - case to heatsinkR
vj
Virtual junction temperature
Storage temperature range
Mounting torque
Parameter
10ms half sine; T
= 125oC
case
1.4 kA
VR = 0
Conditions Min. Max. Units
dc
Mounting torque 15.0Nm
- 0.24
0.08-
with mounting compound
On-state (conducting) - 125
Reverse (blocking)
125
-
–40 150
12.0 15.0 Nm
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3
A2s
o
C/WThermal resistance - junction to caseR
o
C/W
o
C
o
C
o
C
DYNAMIC CHARACTERISTICS
TK12
ParameterSymbol Conditions
V
TM
I
RRM/IDRM
Maximum on-state voltage At 150A peak, T
Peak reverse and off-state current At V
RRM/VDRM
dV/dt Maximum linear rate of rise of off-state voltage To 60% V
Gate source 20V, 20Ω
dI/dt
V
T(TO)
r
t
I
I
Rate of rise of on-state current
Threshold voltage At Tvj = 125oC
T
gd
L
H
On-state slope resistance At Tvj = 125oC
Delay time
Latching current Tj = 25oC, VD = 12V
Holding current Tj = 25oC, VD = 12V, ITM = 1A
tr ≤ 0.5µs, Tj = 125˚C
= 300V, IG = 1A, IT = 50A, dI/dt = 50A/µs,
V
D
dIG/dt = 1A/µs, Tj = 25oC
GATE TRIGGER CHARACTERISTICS AND RATINGS
= 25oC
case
, T
= 125oC
case
= 125oC, Gate open circuit
DRM Tj
Repetitive 50Hz
Non-repetitive
Min. Max. Units
- 2.0 V
-10mA
- 200 V/µs
- 500 A/µs
- 800 A/µs
1.4-V
- 4.0 mΩ
- 1.5 µs
--mA
-50mA
ConditionsParameterSymbol
V
GT
I
GT
V
GD
V
FGM
V
FGN
V
RGM
I
FGM
P
GM
P
G(AV)
Gate trigger voltage V
Gate trigger current
Gate non-trigger voltage At V
DRM
V
DRM
= 12V, T
= 12V, T
DRM Tcase
= 25oC, RL = 6Ω
case
= 25oC, RL = 6Ω
case
= 125oC, RL = 12Ω
Peak forward gate voltage Anode positive with respect to cathode
Peak forward gate voltage Anode negative with respect to cathode
Peak reverse gate voltage
Peak forward gate current Anode positive with respect to cathode
Peak gate power -
Mean gate power
Typ. Max. Units
- 3.0 V
- 125 mA
- 0.2 V
- 3.0 V
- 0.25 V
-5V
-4A
-16W
-3W
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