DYNEX TF94432H, TF94430H, TF94435H, TF94434H Datasheet

TF944..H

Fast Switching Thyristor

Replaces March 1998 version, DS4281-3.2 DS4281-4.0 January 2000

APPLICATIONS

■ High Power Inverters And Choppers

■ UPS

■ Railway Traction

■ Induction Heating

■ AC Motor Drives

■ Cycloconverters

FEATURES

■ Double Side Cooling

■ High Surge Capability

■ High Voltage

VOLTAGE RATINGS

Type Number

TF944 35H TF944 34H TF944 32H TF944 30H

Repetitive

Peak Voltages V

DRM VRRM

3500

3400

3200

3000

V I

DRM

at V

Conditions

= V

RSM

RRM

= I

RRM

or V

RRM

+ 100V

= 100mA

& T

DRM

KEY PARAMETERS

V

DRM

I

T(RMS)

I

TSM

dV/dt 500V/

3500V

1350A

13000A

µs

dI/dt 500A/µs t

q

vj

120µs

Lower voaltage grades available.

CURRENT RATINGS

Symbol

I

T(AV)

I

T(RMS)

Mean on-state current

RMS value

Outline type code: MU169

See Package Details for further information.

Parameter Conditions Max. Units

Half sinewave, 50Hz, T

case

= 80oC

850

1350

A

1/7

TF944..H

SURGE RATINGS

Symbol

I

TSM

I2t 845 x 10

Surge (non-repetitive) on-state current

2

t for fusing

I

Parameter Conditions Max. Units

10ms half sine; VR = 0% V

, Tj = 125˚C 13.0 kA

RRM

, Tj = 125˚C

RRM

THERMAL AND MECHANICAL DATA

Symbol

R

th(j-c)

R

th(c-h)

T

vj

Parameter

Thermal resistance - junction to case

Thermal resistance - case to heatsink

Virtual junction temperature

Double side cooled

Single side cooled

Clamping force 23.5kN with mounting compound

On-state (conducting) - 135

Reverse (blocking)

Conditions Min. Max. Units

dc

Cathode dc - Double side

Single side

- 0.02

0.006

-

- 0.012

125

-

3

A2s

o

C/W

o

C/W--Anode dc

o

C/W

o

C/W

o

C/W

o

C

o

C

T

stg

-

Storage temperature range

Clamping force 22.3 24.6 kN

MEASUREMENT OF RECOVERED CHARGE - Q

Measurement of Q

I

TM

tp = 1ms

dIR/dt

RA1

: Q

= IRR x t

RA1

Q

I

RR

2

RA1

0.5x I

RR

RA1

-40 150

o

C

2/7

DYNAMIC CHARACTERISTICS

TF944..H

ParameterSymbol Conditions

V

TM

I

RRM/IDRM

Maximum on-state voltage At 1500A peak, T

Peak reverse and off-state current At V

RRM/VDRM

dV/dt Maximum linear rate of rise of off-state voltage Linear to 60% V

Gate source 20V, 20Ω

dI/dt

Rate of rise of on-state current

tr ≤ 0.5µs, Tj = 125˚C

V

T(TO)

r

T

t

gd

(ON)TOT

I

H

I

H

q

RR

Threshold voltage At Tvj = 125oC

On-state slope resistance At Tvj = 125oC

T

Delay time

Total turn-on timet

= 25˚C, IT = 50A,

j

V

= 300V, IG = 1A,

D

dI/dt = 50A/µs, dI

Holding current Tj = 25oC, ITM = 1A, VD = 12V 100* - mA

Holding current Tj = 25oC, IG = 0.5A, VD = 12V 300* - mA

Turn-off timet

Tj = 125˚C, IT = 500A, VR = 100V, dV/dt = 20V/µs to 66% V

Reverse recovery chargeQ

dIR/dt = 50A/µs.

*Typical value.

, T

case

DRM Tj

= 25oC

case

= 125oC

= 125oC, Gate open circuit

Repetitive 50Hz

Non-repetitive

/dt = 1A/µs

G

t

DRM

,

q

code: H

Min. Max. Units

- 2.4 V

- 100 mA

- 500 V/µs

- 500 A/µs

- 800 A/µs

1.35-V

- 0.5 mΩ

--*µs

120- µs

-- µC

GATE TRIGGER CHARACTERISTICS AND RATINGS

Symbol Parameter Conditions

V

P

V

V V

P

GT

I

GT

GD

FGM

FGN

RGM

FGM

GM

G(AV)

Gate trigger voltage

Gate trigger current

Gate non-trigger voltage Peak forward gate voltage

Peak forward gate voltage

= 12V, T

DRM

V

= 12V, T

DRM

At V

DRM Tcase

Anode positive with respect to cathode

Anode negative with respect to cathode

Peak reverse gate voltage V5.0-

Peak forward gate current

Anode positive with respect to cathode

Peak gate power

Mean gate power

= 25oC, RL = 6Ω

case

= 25oC, RL = 6Ω

case

= 125oC, RL = 1kΩ

Typ.

-

Max.

Units

3.0

250

0.25 30

0.25 V

10I

50

3.0

V

mA

VV V

A-

W

3/7