DYNEX TF91514B, TF91514C, TF91512B, TF91510B, TF91508B Datasheet
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TF915..B
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APPLICATIONS
■ High Power Inverters And Choppers
■ UPS
■ Railway Traction
■ Induction Heating
■ AC Motor Drives
■ Cycloconverters
FEATURES
■ Double Side Cooling
■ High Surge Capability
■ High Voltage
VOLTAGE RATINGS
KEY PARAMETERS
V
DRM
1400V
I
T(RMS)
1700A
I
TSM
20000A
dV/dt 300V/
µs
dI/dt 500A/µs
t
q
40µs
Conditions
V
RSM
= V
RRM
+ 100V
I
DRM
= I
RRM
= 60mA
at V
RRM
or V
DRM
& T
vj
Repetitive
Peak
Voltages
V
DRM VRRM
Type Number
1400
1200
1000
800
600
Lower voltage grades available.
TF915 14B
TF915 12B
TF915 10B
TF915 08B
TF915 06B
Outline type code: MU169.
See Package Details for further information.
CURRENT RATINGS
Parameter Conditions Max. Units
Mean on-state current
RMS value
Half sinewave, 50Hz, T
case
= 80oC
Half sinewave, 50Hz, T
case
= 80oC
1080
1700
A
A
Symbol
I
T(AV)
I
T(RMS)
TF915..B
Fast Switching Thyristor
Replaces December 1998 version, DS4279-3.0 DS4279-4.0 January 2000
TF915..B
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SURGE RATINGS
Parameter Conditions Max. Units
I
2
t for fusing
10ms half sine; VR = 0% V
RRM
, Tj = 125˚C 20.0 kA
A2s
Surge (non-repetitive) on-state current
10ms half sine; VR = 0% V
RRM
, Tj = 125˚C
Symbol
I
TSM
I2t 2000 x 10
3
THERMAL AND MECHANICAL DATA
dc
Conditions Min. Max. Units
o
C/W--Anode dc
Clamping force 23.5kN
with mounting compound
Thermal resistance - case to heatsink
R
th(c-h)
0.006
Double side
-
125
o
C
T
vj
Virtual junction temperature
T
stg
Storage temperature range
Reverse (blocking)
Single side
-
Thermal resistance - junction to case
R
th(j-c)
Single side cooled
Symbol
Parameter
Clamping force 22.3 24.6 kN
-40 150
o
C
-
On-state (conducting) - 125
o
C
- 0.012
o
C/W
o
C/W
Cathode dc - -
o
C/W
Double side cooled
- 0.020
o
C/W
MEASUREMENT OF RECOVERED CHARGE - Q
RA1
0.5x I
RR
I
RR
Q
RA1
tp = 1ms
I
TM
dIR/dt
Measurement of Q
RA1
: Q
RA1
= IRR x t
RR
2
TF915..B
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DYNAMIC CHARACTERISTICS
V
TM
ParameterSymbol Conditions
Maximum on-state voltage At 2000A peak, T
case
= 25oC
I
RRM/IDRM
Peak reverse and off-state current At V
RRM/VDRM
, T
case
= 125oC
Gate source 20V, 20Ω
tr ≤ 0.5µs, Tj = 125˚C
dV/dt Maximum linear rate of rise of off-state voltage Linear to 60% V
DRM Tj
= 125oC, Gate open circuit
Min. Max. Units
- 1.75 V
-60mA
- 300 V/µs
Repetitive 50Hz
- 500 A/µs
Non-repetitive
- 800 A/µs
Rate of rise of on-state current
dI/dt
V
T(TO)
Threshold voltage At Tvj = 125oC
r
T
On-state slope resistance At Tvj = 125oC
1.25-V
- 0.25 mΩ
Delay time
t
gd
1.5* - µs
Total turn-on timet
(ON)TOT
3.0* - µs
Tj = 25˚C, IT = 50A,
V
D
= 300V, IG = 1A,
dI/dt = 50A/µs, dI
G
/dt = 1A/µs
*Typical value.
I
H
Holding current Tj = 25oC, ITM = 1A, VD = 12V 100* - mA
Tj = 125˚C, IT = 250A, VR = 50V,
dV/dt = 20V/µs (Linear to 60% V
DRM
),
dIR/dt = 50A/µs, Gate open circuit
Turn-off timet
q
40- µs
t
q
code: B
GATE TRIGGER CHARACTERISTICS AND RATINGS
V
DRM
= 12V, T
case
= 25oC, RL = 6Ω
ConditionsParameterSymbol
V
GT
Gate trigger voltage V
DRM
= 12V, T
case
= 25oC, RL = 6Ω
I
GT
Gate trigger current
V
GD
Gate non-trigger voltage At V
DRM Tcase
= 125oC, RL = 1kΩ
- 3.0 V
- 200 mA
- 0.2 V
Typ. Max. Units
V
RGM
Peak reverse gate voltage
I
FGM
Peak forward gate current Anode positive with respect to cathode
P
GM
Peak gate power
P
G(AV)
Mean gate power
- 5.0 V
-10A
-50W
-3W
I
L
Latching current Tj = 25oC, IG = 0.5A, VD = 12V 300* - mA
TF915..B
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CURVES
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