DYNEX TF91320C, TF91318C, TF91316C Datasheet

TF913..C
TF913..C
Fast Switching Thyristor
Replaces March 1998 version, DS4278-2.2 DS4278-3.0 January 2000
APPLICATIONS
High Power Inverters And Choppers
UPS
Railway Traction
Induction Heating
AC Motor Drives
FEATURES
Double Side Cooling
High Surge Capability
High Voltage
VOLTAGE RATINGS
Type Number
TF913 20C TF913 18C TF913 16C
Repetitive
Peak Voltages V
DRM VRRM
2000
1800
1600
V
I
Conditions
= V
RSM
RRM
= I
DRM
RRM
+ 100V
= 60mA
KEY PARAMETERS
V
DRM
I
T(RMS)
I
TSM
dV/dt 300V/
2000V
1300A
17000A
µs
dI/dt 500A/µs t
q
50µs
Lower voltage grades available.
CURRENT RATINGS
Symbol
I
T(AV)
I
T(RMS)
Mean on-state current
RMS value
at V
or V
RRM
Parameter Conditions Max. Units
DRM
& T
vj
Half sinewave, 50Hz, T
Half sinewave, 50Hz, T
Outline type code: MU169.
See Package Details for further information.
case
case
= 80oC
= 80oC
828
1300
A
A
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TF913..C
SURGE RATINGS
Symbol
I
TSM
I2t 1445 x 10
Surge (non-repetitive) on-state current
2
t for fusing
I
Parameter Conditions Max. Units
10ms half sine; VR = 0% V
10ms half sine; VR = 0% V
, Tj = 125˚C 17.0 kA
RRM
, Tj = 125˚C
RRM
THERMAL AND MECHANICAL DATA
Symbol
R
th(j-c)
R
th(c-h)
T
vj
Parameter
Thermal resistance - junction to case
Thermal resistance - case to heatsink
Virtual junction temperature
Double side cooled
Single side cooled
Clamping force 23.5kN with mounting compound
On-state (conducting) - 125
Reverse (blocking)
Conditions Min. Max. Units
dc
Cathode dc - ­Double side
Single side
- 0.020
0.006
-
- 0.012
125
-
3
A2s
o
C/W
o
C/W--Anode dc
o
C/W
o
C/W
o
C/W
o
C
o
C
T
stg
-
Storage temperature range
Clamping force 22.3 24.6 kN
MEASUREMENT OF RECOVERED CHARGE - Q
Measurement of Q
I
TM
tp = 1ms
dIR/dt
RA1
: Q
= IRR x t
RA1
Q
I
RR
2
RA1
0.5x I
RR
RR
RA1
-40 150
o
C
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DYNAMIC CHARACTERISTICS
TF913..C
ParameterSymbol Conditions
V
TM
I
RRM/IDRM
Maximum on-state voltage At 2000A peak, T
Peak reverse and off-state current At V
RRM/VDRM
dV/dt Maximum linear rate of rise of off-state voltage Linear to 60% V
Gate source 20V, 20
dI/dt
Rate of rise of on-state current
tr 0.5µs, Tj = 125˚C
V
T(TO)
r
T
t
gd
(ON)TOT
I
H
I
L
Threshold voltage At Tvj = 125oC
On-state slope resistance At Tvj = 125oC Delay time
Total turn-on timet
Tj = 25˚C, IT = 50A, V
= 300V, IG = 1A,
D
dI/dt = 50A/µs, dI
Holding current Tj = 25oC, ITM = 1A, VD = 12V 100* - mA
Latching current Tj = 25oC, IG = 0.5A, VD = 12V 300* - mA
Tj = 125˚C, IT = 250A, VR = 50V,
q
Turn-off timet
dV/dt = 20V/µs (Linear to 60% V dIR/dt = 50A/µs, Gate open circuit
, T
case
DRM Tj
= 25oC
case
= 125oC
= 125oC, Gate open circuit
Repetitive 50Hz
Non-repetitive
/dt = 1A/µs
G
t
q
),
DRM
code: C
Min. Max. Units
- 2.15 V
-60mA
- 300 V/µs
- 500 A/µs
- 800 A/µs
1.25-V
- 0.45 m
4* µs
-
2* - µs
50- µs
*Typical value.
GATE TRIGGER CHARACTERISTICS AND RATINGS
V
GT
I
GT
V
GD
V
RGM
I
FGM
P
GM
P
G(AV)
Gate trigger voltage V
Gate trigger current
Gate non-trigger voltage At V
DRM
V
DRM
= 12V, T = 12V, T
DRM Tcase
Peak reverse gate voltage
Peak forward gate current Anode positive with respect to cathode
Peak gate power
Mean gate power
ConditionsParameterSymbol
= 25oC, RL = 6
case
= 25oC, RL = 6
case
= 125oC, RL = 1k
Typ. Max. Units
- 3.0 V
- 200 mA
- 0.2 V
- 5.0 V
-10A
-50W
-3W
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TF913..C
CURVES
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