DYNEX TF66614A, TF66612A, TF66610A, TF66608A, TF66606A Datasheet
TF666..A
TF666..A
Fast Switching Thyristor
Replaces March 1998 version, DS4274-2.2 DS4274-3.0 January 2000
APPLICATIONS
■ High Power Inverters And Choppers
■ UPS
■ Railway Traction
■ Induction Heating
■ AC Motor Drives
■ Cycloconverters
FEATURES
■ Double Side Cooling
■ High Surge Capability
■ High Voltage
VOLTAGE RATINGS
Type Number
TF666 14A
TF666 12A
TF666 10A
TF666 08A
TF666 06A
Repetitive
Peak
Voltages
V
DRM VRRM
1400
1200
1000
800
600
V
I
at V
Conditions
= V
RSM
RRM
= I
DRM
RRM
or V
RRM
+ 100V
= 35mA
& T
DRM
KEY PARAMETERS
V
DRM
I
T(RMS)
I
TSM
dV/dt 300V/
1400V
700A
9000A
µs
dI/dt 500A/µs
t
q
vj
20µs
Lower voltage grades available.
CURRENT RATINGS
Symbol
I
T(AV)
I
T(RMS)
Mean on-state current
RMS value
Outline type code: MU171.
See Package Details for further information.
Parameter Conditions Max. Units
Half sinewave, 50Hz, T
Half sinewave, 50Hz, T
case
case
= 80oC
= 80oC
446
700
A
A
1/13
TF666..A
SURGE RATINGS
Symbol
I
TSM
I2t 405.0 x 10
Surge (non-repetitive) on-state current
2
t for fusing
I
Parameter Conditions Max. Units
10ms half sine; VR = 0% V
10ms half sine; VR = 0% V
, Tj = 125˚C 9.0 kA
RRM
, Tj = 125˚C
RRM
THERMAL AND MECHANICAL DATA
Symbol
R
th(j-c)
R
th(c-h)
T
vj
Parameter
Thermal resistance - junction to case
Thermal resistance - case to heatsink
Virtual junction temperature
Double side cooled
Single side cooled
Clamping force 10.0kN
with mounting compound
On-state (conducting) - 125
Reverse (blocking)
Conditions Min. Max. Units
dc
Cathode dc - 0.11
Double side
Single side
- 0.05
0.01
-
- 0.02
125
-
3
A2s
o
C/W
o
C/W- 0.095Anode dc
o
C/W
o
C/W
o
C/W
o
C
o
C
T
stg
-
Storage temperature range
Clamping force 9.5 10.5 kN
MEASUREMENT OF RECOVERED CHARGE - Q
Measurement of Q
I
TM
tp = 1ms
dIR/dt
RA1
: Q
= IRR x t
RA1
Q
I
RR
2
RA1
0.5x I
RR
RR
RA1
-40 150
o
C
2/13
DYNAMIC CHARACTERISTICS
TF666..A
ParameterSymbol Conditions
V
TM
I
RRM/IDRM
Maximum on-state voltage At 1500A peak, T
Peak reverse and off-state current At V
RRM/VDRM
dV/dt Maximum linear rate of rise of off-state voltage Linear to 60% V
Gate source 20V, 20Ω
dI/dt
Rate of rise of on-state current
tr ≤ 0.5µs, Tj = 125˚C
V
T(TO)
r
T
t
gd
(ON)TOT
I
H
I
L
Threshold voltage At Tvj = 125oC
On-state slope resistance At Tvj = 125oC
T
Delay time
Total turn-on timet
= 25˚C, IT = 50A,
j
V
= 300V, IG = 1A,
D
dI/dt = 50A/µs, dI
Holding current Tj = 25oC, ITM = 1A, VD = 12V - 80* mA
Latching current Tj = 25oC, IG = 0.5A, VD = 12V - 500* mA
Tj = 125˚C, IT = 250A, VR = 50V,
q
Turn-off timet
dV/dt = 20V/µs (Linear to 60% V
dIR/dt = 50A/µs, Gate open circuit
, T
case
DRM Tj
= 25oC
case
= 125oC
= 125oC, Gate open circuit
Repetitive 50Hz
Non-repetitive
/dt = 1A/µs
G
t
q
),
DRM
code: A
Min. Max. Units
- 2.1 V
-35mA
- 300 V/µs
- 500 A/µs
- 800 A/µs
1.24-V
- 0.57 mΩ
- 1.5* µs
-3*µs
20- µs
*Typical value.
GATE TRIGGER CHARACTERISTICS AND RATINGS
V
GT
I
GT
V
GD
V
RGM
I
FGM
P
GM
P
G(AV)
Gate trigger voltage V
Gate trigger current
Gate non-trigger voltage At V
DRM
V
DRM
= 12V, T
= 12V, T
DRM Tcase
Peak reverse gate voltage
Peak forward gate current Anode positive with respect to cathode
Peak gate power
Mean gate power
ConditionsParameterSymbol
= 25oC, RL = 6Ω
case
= 25oC, RL = 6Ω
case
= 125oC, RL = 1kΩ
Typ. Max. Units
- 3.0 V
- 200 mA
- 0.2 V
- 5.0 V
-4A
-16W
-3W
3/13
TF666..A
CURVES
4/13
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